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STD2NK70ZT4-VB Product details
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Product Introduction: STD2NK70ZT4-VB
STD2NK70ZT4-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of up to 700V and a gate voltage (VGS) of ±30V. This MOSFET uses advanced SJ_Multi-EPI technology to provide excellent voltage resistance and efficient switching performance. Its on-resistance (RDS(ON)) is 2400mΩ@VGS=10V. Although it has a relatively high on-resistance under high voltage conditions, it still performs well in many high-voltage and low-current applications. Its maximum drain current (ID) is 2A, which is suitable for high-voltage applications with low current loads. This MOSFET is suitable for use in high-voltage power systems and other applications that require voltage resistance characteristics.
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STD2NK70ZT4-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of up to 700V and a gate voltage (VGS) of ±30V. This MOSFET uses advanced SJ_Multi-EPI technology to provide excellent voltage resistance and efficient switching performance. Its on-resistance (RDS(ON)) is 2400mΩ@VGS=10V. Although it has a relatively high on-resistance under high voltage conditions, it still performs well in many high-voltage and low-current applications. Its maximum drain current (ID) is 2A, which is suitable for high-voltage applications with low current loads. This MOSFET is suitable for use in high-voltage power systems and other applications that require voltage resistance characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|----------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package for space-constrained high-voltage switch applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications. |
| **Drain-Source Voltage (VDS)** | 700V | Maximum drain-source voltage for high-voltage power conversion applications. |
| **Gate Voltage (VGS)** | ±30V | Acceptable gate voltage range for safe operation. |
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required to ensure device turn-on. |
| **On-Resistance (RDS(ON))** | 2400mΩ@VGS=10V | On-resistance at VGS=10V for high-voltage applications. |
| **Drain Current (ID)** | 2A | Maximum drain current, suitable for low current load applications. |
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, providing high withstand voltage and stable performance. |
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| Parameter | Value | Description|
|----------------|----------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package for space-constrained high-voltage switch applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications. |
| **Drain-Source Voltage (VDS)** | 700V | Maximum drain-source voltage for high-voltage power conversion applications. |
| **Gate Voltage (VGS)** | ±30V | Acceptable gate voltage range for safe operation. |
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required to ensure device turn-on. |
| **On-Resistance (RDS(ON))** | 2400mΩ@VGS=10V | On-resistance at VGS=10V for high-voltage applications. |
| **Drain Current (ID)** | 2A | Maximum drain current, suitable for low current load applications. |
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, providing high withstand voltage and stable performance. |
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Domain and module applications：
Application fields and module examples
1. **High voltage power supply system**
STD2NK70ZT4-VB performs well in high voltage power supply systems and can withstand drain-source voltages up to 700V. It is suitable for industrial power supplies, switching power supplies (SMPS) and other systems to provide reliable switching control and ensure safe transmission and conversion of high voltages.
2. **High voltage switchgear and power management system**
Due to its high withstand voltage capability of 700V, this MOSFET is suitable for high voltage switchgear and power management systems, such as those used in industrial automation and power conversion modules. It is able to control high voltage loads while protecting the power system from overvoltage.
3. **Inverter and solar power system**
In inverters (such as solar power systems), STD2NK70ZT4-VB can be used for high voltage conversion and switching. Its high withstand voltage characteristics enable it to withstand the higher voltages commonly found in solar power generation systems and provide stable current output.
4. **Electric Vehicles and High-Voltage Battery Management Systems**
In the high-voltage battery management system of electric vehicles, the STD2NK70ZT4-VB can be used to control and protect the charging and discharging process of the battery pack. Due to its high voltage withstand capability, it can effectively manage the power conversion between the battery and the motor and ensure the stability of the system.
The STD2NK70ZT4-VB is suitable for many high-voltage applications, especially in situations where high voltage withstand and power switching functions are required. Its high voltage withstand characteristics and SJ_Multi-EPI technology make it an ideal choice for power management, inverters, solar systems, and electric vehicles.
1. **High voltage power supply system**
STD2NK70ZT4-VB performs well in high voltage power supply systems and can withstand drain-source voltages up to 700V. It is suitable for industrial power supplies, switching power supplies (SMPS) and other systems to provide reliable switching control and ensure safe transmission and conversion of high voltages.
2. **High voltage switchgear and power management system**
Due to its high withstand voltage capability of 700V, this MOSFET is suitable for high voltage switchgear and power management systems, such as those used in industrial automation and power conversion modules. It is able to control high voltage loads while protecting the power system from overvoltage.
3. **Inverter and solar power system**
In inverters (such as solar power systems), STD2NK70ZT4-VB can be used for high voltage conversion and switching. Its high withstand voltage characteristics enable it to withstand the higher voltages commonly found in solar power generation systems and provide stable current output.
4. **Electric Vehicles and High-Voltage Battery Management Systems**
In the high-voltage battery management system of electric vehicles, the STD2NK70ZT4-VB can be used to control and protect the charging and discharging process of the battery pack. Due to its high voltage withstand capability, it can effectively manage the power conversion between the battery and the motor and ensure the stability of the system.
The STD2NK70ZT4-VB is suitable for many high-voltage applications, especially in situations where high voltage withstand and power switching functions are required. Its high voltage withstand characteristics and SJ_Multi-EPI technology make it an ideal choice for power management, inverters, solar systems, and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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