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STD2NB80-VB Product details
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STD2NB80-VB Product Introduction
STD2NB80-VB is a high-performance N-channel power MOSFET in TO-252 package, suitable for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 800V, which can handle higher voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 2600mΩ, which provides lower power loss and higher efficiency at VGS=10V. It has a high current carrying capacity with a maximum current of 2A, and is suitable for switching control and power conversion in high voltage applications. This MOSFET uses SJ_Multi-EPI technology, which provides excellent performance, including lower switching losses and efficient conduction characteristics, and is widely used in various industrial and power management fields.
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STD2NB80-VB is a high-performance N-channel power MOSFET in TO-252 package, suitable for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 800V, which can handle higher voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 2600mΩ, which provides lower power loss and higher efficiency at VGS=10V. It has a high current carrying capacity with a maximum current of 2A, and is suitable for switching control and power conversion in high voltage applications. This MOSFET uses SJ_Multi-EPI technology, which provides excellent performance, including lower switching losses and efficient conduction characteristics, and is widely used in various industrial and power management fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD2NB80-VB parameter details
| **Parameter name** | **Parameter value** | **Description** |
|---------------------|--------------------------|-------------------------------------------------|
| **Package type** | TO-252 | Suitable for surface mount (SMD) with good thermal management performance. |
| **Channel configuration** | Single N-channel | Provides efficient switching characteristics, suitable for high voltage and high current applications. |
| **Drain-source voltage (VDS)** | 800V | Suitable for power control applications in high voltage environments. |
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate-source voltage, supporting a variety of drive voltage requirements. |
| **Throw-on voltage (Vth)** | 3.5V | Higher turn-on voltage is suitable for high voltage control environments. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V | Higher on-resistance, suitable for low power consumption applications. |
| **Maximum current (ID)** | 2A | Suitable for medium current range applications. |
| **Technology** | SJ_Multi-EPI | Provides low on-resistance and high-efficiency switching characteristics, suitable for various applications. |
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| **Parameter name** | **Parameter value** | **Description** |
|---------------------|--------------------------|-------------------------------------------------|
| **Package type** | TO-252 | Suitable for surface mount (SMD) with good thermal management performance. |
| **Channel configuration** | Single N-channel | Provides efficient switching characteristics, suitable for high voltage and high current applications. |
| **Drain-source voltage (VDS)** | 800V | Suitable for power control applications in high voltage environments. |
| **Gate-source voltage (VGS)** | ±30V | Wide range of gate-source voltage, supporting a variety of drive voltage requirements. |
| **Throw-on voltage (Vth)** | 3.5V | Higher turn-on voltage is suitable for high voltage control environments. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V | Higher on-resistance, suitable for low power consumption applications. |
| **Maximum current (ID)** | 2A | Suitable for medium current range applications. |
| **Technology** | SJ_Multi-EPI | Provides low on-resistance and high-efficiency switching characteristics, suitable for various applications. |
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Domain and module applications：
STD2NB80-VB application areas and module examples
1. **High-voltage power management system**
STD2NB80-VB is suitable for high-voltage power management and switch mode power supply (SMPS) applications. Its maximum drain-source voltage of 800V makes it an ideal choice for power conversion in high-voltage environments. The low on-resistance of this MOSFET can effectively reduce the power loss of the system and improve the conversion efficiency. It is widely used in power modules and AC power systems.
2. **Industrial control system**
In industrial control systems, STD2NB80-VB is used in motor control, load switching and high-voltage switch modules. Its high current carrying capacity (maximum current 2A) can support the drive and protection circuits in industrial equipment to ensure stable operation of the system at high voltage.
3. **Battery management system (BMS)**
This MOSFET can be used in the power regulation module in the battery management system. Due to its high voltage tolerance, STD2NB80-VB can control the charging and discharging process, ensuring safe operation of the battery at high voltage. In addition, the higher on-resistance is also suitable for some battery management solutions with lower power requirements.
4. **Home appliances and consumer electronics**
In power modules for home appliances and consumer electronics, STD2NB80-VB can be used for voltage-regulated power supplies, power converters, and current control circuits. Its high voltage and high efficiency make it a key component in the power supply part of home appliances, especially for products that require a high-voltage working environment, such as power modules in large appliances and industrial equipment.
5. **Renewable energy systems**
STD2NB80-VB is also widely used in renewable energy systems, especially in power conversion modules for solar and wind energy. Its ability to work stably at high voltage and high current makes it an ideal choice for maximum power point tracking (MPPT) controllers in photovoltaic power generation systems, ensuring maximum system efficiency.
STD2NB80-VB MOSFET, with its high voltage and current carrying capacity, excellent conduction characteristics and switching performance, is suitable for a variety of high-voltage, high-current power management and control systems, providing a reliable and efficient solution.
1. **High-voltage power management system**
STD2NB80-VB is suitable for high-voltage power management and switch mode power supply (SMPS) applications. Its maximum drain-source voltage of 800V makes it an ideal choice for power conversion in high-voltage environments. The low on-resistance of this MOSFET can effectively reduce the power loss of the system and improve the conversion efficiency. It is widely used in power modules and AC power systems.
2. **Industrial control system**
In industrial control systems, STD2NB80-VB is used in motor control, load switching and high-voltage switch modules. Its high current carrying capacity (maximum current 2A) can support the drive and protection circuits in industrial equipment to ensure stable operation of the system at high voltage.
3. **Battery management system (BMS)**
This MOSFET can be used in the power regulation module in the battery management system. Due to its high voltage tolerance, STD2NB80-VB can control the charging and discharging process, ensuring safe operation of the battery at high voltage. In addition, the higher on-resistance is also suitable for some battery management solutions with lower power requirements.
4. **Home appliances and consumer electronics**
In power modules for home appliances and consumer electronics, STD2NB80-VB can be used for voltage-regulated power supplies, power converters, and current control circuits. Its high voltage and high efficiency make it a key component in the power supply part of home appliances, especially for products that require a high-voltage working environment, such as power modules in large appliances and industrial equipment.
5. **Renewable energy systems**
STD2NB80-VB is also widely used in renewable energy systems, especially in power conversion modules for solar and wind energy. Its ability to work stably at high voltage and high current makes it an ideal choice for maximum power point tracking (MPPT) controllers in photovoltaic power generation systems, ensuring maximum system efficiency.
STD2NB80-VB MOSFET, with its high voltage and current carrying capacity, excellent conduction characteristics and switching performance, is suitable for a variety of high-voltage, high-current power management and control systems, providing a reliable and efficient solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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