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STD2NB80-1-VB Product details
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Product Introduction
STD2NB80-1-VB is a high voltage N-channel MOSFET in TO-251 package. This MOSFET has a high maximum drain-source voltage (VDS) of 800V, suitable for applications that require high voltage tolerance. Its maximum gate-source voltage (VGS) is ±30V, which can adapt to a wider control voltage range to ensure stable operation in different working environments. Through SJ_Multi-EPI technology, this product provides high voltage tolerance while also having a low on-resistance (RDS(ON) is 2600mΩ at VGS = 10V), suitable for low power consumption occasions. The maximum drain current of STD2NB80-1-VB is 2A, suitable for low current applications, and has high reliability. It is widely used in power management, high voltage switching and industrial control.
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STD2NB80-1-VB is a high voltage N-channel MOSFET in TO-251 package. This MOSFET has a high maximum drain-source voltage (VDS) of 800V, suitable for applications that require high voltage tolerance. Its maximum gate-source voltage (VGS) is ±30V, which can adapt to a wider control voltage range to ensure stable operation in different working environments. Through SJ_Multi-EPI technology, this product provides high voltage tolerance while also having a low on-resistance (RDS(ON) is 2600mΩ at VGS = 10V), suitable for low power consumption occasions. The maximum drain current of STD2NB80-1-VB is 2A, suitable for low current applications, and has high reliability. It is widely used in power management, high voltage switching and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------------------------|--------------------------------------------------|
| **Package** | TO-251 | Surface mount package, compact and suitable for high voltage applications|
| **Configuration** | Unipolar N-channel | Provides efficient switching control, suitable for high voltage applications|
| **Maximum drain-source voltage (VDS)** | 800V | High voltage tolerance, suitable for high voltage power supply or switch control applications|
| **Maximum gate-source voltage (VGS)** | ±30V | Wide gate-source voltage range, suitable for various control voltage requirements|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS = 10V | VGS=10V , suitable for low power applications|
| **Maximum Drain Current (ID)** | 2A | Maximum continuous drain current capability|
| **Technology** | SJ_Multi-EPI | High voltage performance and low on-resistance with SJ_Multi-EPI technology|
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| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------------------------|--------------------------------------------------|
| **Package** | TO-251 | Surface mount package, compact and suitable for high voltage applications|
| **Configuration** | Unipolar N-channel | Provides efficient switching control, suitable for high voltage applications|
| **Maximum drain-source voltage (VDS)** | 800V | High voltage tolerance, suitable for high voltage power supply or switch control applications|
| **Maximum gate-source voltage (VGS)** | ±30V | Wide gate-source voltage range, suitable for various control voltage requirements|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS = 10V | VGS=10V , suitable for low power applications|
| **Maximum Drain Current (ID)** | 2A | Maximum continuous drain current capability|
| **Technology** | SJ_Multi-EPI | High voltage performance and low on-resistance with SJ_Multi-EPI technology|
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Domain and module applications：
Application fields and module examples
1. **High-voltage power management**
STD2NB80-1-VB can be widely used in high-voltage power management systems, especially in situations where high voltage withstand capability is required (such as DC-DC converters and PFC circuits). Its 800V maximum drain-source voltage enables it to safely handle input from high-voltage power supplies, while its relatively low on-resistance (2600mΩ) can effectively reduce energy loss and improve power efficiency.
2. **High-voltage switch applications**
In some industrial equipment, high voltage switching control is required, such as the conversion of high-voltage DC (HVDC) or AC (HVAC) power. STD2NB80-1-VB can play a key role as a switching element in these applications, providing stable switching performance and withstanding high voltage. Due to its high voltage withstand characteristics and low on-resistance, it has very good adaptability in this type of high-voltage switch module.
3. **Power supply module for power tools**
In the power control module of power tools, STD2NB80-1-VB can be used for high-voltage battery management and power conversion. Its high voltage tolerance ensures that it can stably handle high voltage input from the battery, especially during battery charging and power conversion of power tools, ensuring safe and stable operation of the equipment.
4. **Industrial control system**
In industrial control systems, STD2NB80-1-VB can be used as a driver module to control high-voltage devices such as motors, pumps and fans. This MOSFET can provide stable current transmission, while ensuring reliable operation of the device in complex voltage fluctuation environments through high voltage resistance.
5. **Power management of medical equipment**
Due to its high voltage tolerance and low on-resistance, STD2NB80-1-VB is also used in power modules of some medical equipment. These devices often require stable high voltage input and efficient power conversion to ensure the precise operation of the equipment. This MOSFET can be used as a key component in power modules, providing efficient current transmission and stable switching control.
6. **Inverter and Energy Conversion System**
STD2NB80-1-VB can be used in inverters and other energy conversion equipment, especially in photovoltaic systems, where it can be used in DC-AC converters to withstand higher voltage inputs. Its high voltage withstand capability and low switching losses make it excellent in the field of energy conversion, helping to improve the efficiency of the entire system.
In summary, STD2NB80-1-VB is suitable for many fields, especially in applications such as high-voltage power management, power tools, electric vehicles and inverters, where it provides excellent characteristics of high withstand voltage, stable performance and low power loss.
1. **High-voltage power management**
STD2NB80-1-VB can be widely used in high-voltage power management systems, especially in situations where high voltage withstand capability is required (such as DC-DC converters and PFC circuits). Its 800V maximum drain-source voltage enables it to safely handle input from high-voltage power supplies, while its relatively low on-resistance (2600mΩ) can effectively reduce energy loss and improve power efficiency.
2. **High-voltage switch applications**
In some industrial equipment, high voltage switching control is required, such as the conversion of high-voltage DC (HVDC) or AC (HVAC) power. STD2NB80-1-VB can play a key role as a switching element in these applications, providing stable switching performance and withstanding high voltage. Due to its high voltage withstand characteristics and low on-resistance, it has very good adaptability in this type of high-voltage switch module.
3. **Power supply module for power tools**
In the power control module of power tools, STD2NB80-1-VB can be used for high-voltage battery management and power conversion. Its high voltage tolerance ensures that it can stably handle high voltage input from the battery, especially during battery charging and power conversion of power tools, ensuring safe and stable operation of the equipment.
4. **Industrial control system**
In industrial control systems, STD2NB80-1-VB can be used as a driver module to control high-voltage devices such as motors, pumps and fans. This MOSFET can provide stable current transmission, while ensuring reliable operation of the device in complex voltage fluctuation environments through high voltage resistance.
5. **Power management of medical equipment**
Due to its high voltage tolerance and low on-resistance, STD2NB80-1-VB is also used in power modules of some medical equipment. These devices often require stable high voltage input and efficient power conversion to ensure the precise operation of the equipment. This MOSFET can be used as a key component in power modules, providing efficient current transmission and stable switching control.
6. **Inverter and Energy Conversion System**
STD2NB80-1-VB can be used in inverters and other energy conversion equipment, especially in photovoltaic systems, where it can be used in DC-AC converters to withstand higher voltage inputs. Its high voltage withstand capability and low switching losses make it excellent in the field of energy conversion, helping to improve the efficiency of the entire system.
In summary, STD2NB80-1-VB is suitable for many fields, especially in applications such as high-voltage power management, power tools, electric vehicles and inverters, where it provides excellent characteristics of high withstand voltage, stable performance and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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