中文
English
STD25P03LT4G-VB Product details
Back to previous pageProduct introduction：
STD25P03LT4G-VB Product Introduction
STD25P03LT4G-VB is a high-performance P-channel power MOSFET in TO-252 package, suitable for low voltage and medium power switching circuits. The drain-source voltage (VDS) of this model is -30V, which is suitable for power conversion, load switching and other occasions in low voltage applications. Its gate-source voltage (VGS) range is ±20V, and the turn-on voltage (Vth) is -1.7V. It can be turned on at a lower driving voltage, which is suitable for low power consumption circuit applications. With low on-resistance (RDS(ON) = 33mΩ @ VGS=10V), it can effectively reduce power loss and improve overall system efficiency. Using Trench process, it provides excellent switching performance and low switching loss, which is an ideal choice for load switching and power management.
---
STD25P03LT4G-VB is a high-performance P-channel power MOSFET in TO-252 package, suitable for low voltage and medium power switching circuits. The drain-source voltage (VDS) of this model is -30V, which is suitable for power conversion, load switching and other occasions in low voltage applications. Its gate-source voltage (VGS) range is ±20V, and the turn-on voltage (Vth) is -1.7V. It can be turned on at a lower driving voltage, which is suitable for low power consumption circuit applications. With low on-resistance (RDS(ON) = 33mΩ @ VGS=10V), it can effectively reduce power loss and improve overall system efficiency. Using Trench process, it provides excellent switching performance and low switching loss, which is an ideal choice for load switching and power management.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Parameter Detailed Description
| **Parameter Name** | **Parameter Value** | **Description** |
|--------------------|---------------------------|-------------------------------------------------|
| **Package Type** | TO-252 | Suitable for surface mount (SMD), compact design and good heat dissipation performance. |
| **Channel Configuration** | Single P-channel | Provides ideal switching characteristics for low voltage applications. |
| **Drain-Source Voltage (VDS)** | -30V | Suitable for power control circuits in the low voltage range. |
| **Gate-Source Voltage (VGS)** | ±20V | Wide gate-source voltage range, suitable for various drive circuits. |
| **Throw-On Voltage (Vth)** | -1.7V | Lower turn-on voltage, able to adapt to low voltage drive requirements. |
| **On-resistance (RDS(ON))** | 46mΩ @ VGS=4.5V; 33mΩ @ VGS=10V | Lower on-resistance effectively reduces power loss. |
| **Maximum current (ID)** | -38A | Suitable for higher current loads and can work stably under higher load conditions. |
| **Technology** | Trench | Trench process provides low on-resistance and efficient switching characteristics. |
---
| **Parameter Name** | **Parameter Value** | **Description** |
|--------------------|---------------------------|-------------------------------------------------|
| **Package Type** | TO-252 | Suitable for surface mount (SMD), compact design and good heat dissipation performance. |
| **Channel Configuration** | Single P-channel | Provides ideal switching characteristics for low voltage applications. |
| **Drain-Source Voltage (VDS)** | -30V | Suitable for power control circuits in the low voltage range. |
| **Gate-Source Voltage (VGS)** | ±20V | Wide gate-source voltage range, suitable for various drive circuits. |
| **Throw-On Voltage (Vth)** | -1.7V | Lower turn-on voltage, able to adapt to low voltage drive requirements. |
| **On-resistance (RDS(ON))** | 46mΩ @ VGS=4.5V; 33mΩ @ VGS=10V | Lower on-resistance effectively reduces power loss. |
| **Maximum current (ID)** | -38A | Suitable for higher current loads and can work stably under higher load conditions. |
| **Technology** | Trench | Trench process provides low on-resistance and efficient switching characteristics. |
---
Domain and module applications：
Application fields and module examples
1. **Load Switching**
STD25P03LT4G-VB performs well in load switching applications, especially for low voltage and medium power load control. Its low on-resistance and excellent switching characteristics make it very suitable for load switch control in battery-powered systems, low-power devices and other fields.
2. **Power Management**
In power management systems, STD25P03LT4G-VB can be used for load power switching, power conversion and battery management applications. Due to its low on-resistance and high current capability (maximum current 38A), it can help reduce power loss in the system and improve overall efficiency. It is widely used in portable electronic devices, LED driver power systems and other systems.
3. **DC-DC Converters**
In DC-DC converters, STD25P03LT4G-VB can be used as an efficient switching element. Its low on-resistance and excellent switching performance can significantly reduce energy loss and improve power conversion efficiency, and is particularly suitable for power management modules in low-voltage systems such as mobile devices and laptops.
4. **Battery Management Systems (BMS)**
In battery management systems, the STD25P03LT4G-VB can be used for battery charge and discharge control. Its high current carrying capacity (maximum current -38A) enables it to handle high current loads, while its low on-resistance helps extend the battery life and reduce energy loss.
5. **Smart Battery Chargers**
This MOSFET is suitable for smart battery chargers, especially in applications with high charging voltage and current requirements. The STD25P03LT4G-VB MOSFET has low on-resistance and excellent switching characteristics, ensuring efficient operation of the charger, reducing heat and improving charging efficiency.
STD25P03LT4G-VB MOSFET is widely used in load switching, power management, battery management, DC-DC converters and smart battery chargers due to its low turn-on voltage, low on-resistance and high current capability. It can provide excellent solutions for various low-voltage and high-efficiency power management applications.
1. **Load Switching**
STD25P03LT4G-VB performs well in load switching applications, especially for low voltage and medium power load control. Its low on-resistance and excellent switching characteristics make it very suitable for load switch control in battery-powered systems, low-power devices and other fields.
2. **Power Management**
In power management systems, STD25P03LT4G-VB can be used for load power switching, power conversion and battery management applications. Due to its low on-resistance and high current capability (maximum current 38A), it can help reduce power loss in the system and improve overall efficiency. It is widely used in portable electronic devices, LED driver power systems and other systems.
3. **DC-DC Converters**
In DC-DC converters, STD25P03LT4G-VB can be used as an efficient switching element. Its low on-resistance and excellent switching performance can significantly reduce energy loss and improve power conversion efficiency, and is particularly suitable for power management modules in low-voltage systems such as mobile devices and laptops.
4. **Battery Management Systems (BMS)**
In battery management systems, the STD25P03LT4G-VB can be used for battery charge and discharge control. Its high current carrying capacity (maximum current -38A) enables it to handle high current loads, while its low on-resistance helps extend the battery life and reduce energy loss.
5. **Smart Battery Chargers**
This MOSFET is suitable for smart battery chargers, especially in applications with high charging voltage and current requirements. The STD25P03LT4G-VB MOSFET has low on-resistance and excellent switching characteristics, ensuring efficient operation of the charger, reducing heat and improving charging efficiency.
STD25P03LT4G-VB MOSFET is widely used in load switching, power management, battery management, DC-DC converters and smart battery chargers due to its low turn-on voltage, low on-resistance and high current capability. It can provide excellent solutions for various low-voltage and high-efficiency power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
