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STD20NF10T4-VB Product details

Product introduction:

STD20NF10T4-VB Product Introduction

STD20NF10T4-VB is a high-performance N-channel power MOSFET in TO-252 package, suitable for high current applications. The drain-source voltage (VDS) of this model is 100V, which is suitable for medium voltage power conversion, switch control and other occasions. It has a low on-resistance (RDS(ON) = 30mΩ @ VGS=10V), which can effectively reduce power loss and improve system efficiency. The turn-on voltage (Vth) is 1.8V, which is suitable for a wide range of drive voltages. The technology adopts Trench process, which provides excellent conduction characteristics and low switching losses, and is an ideal choice for power control applications with higher currents.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 40A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed description of parameters

| **Parameter name** | **Parameter value** | **Description** |
|--------------------|---------------------------|-------------------------------------------------|
| **Package type** | TO-252 | Suitable for surface mount (SMD), compact design and good heat dissipation performance. |
| **Channel configuration** | Single N-channel | Provides excellent switching characteristics, suitable for high current and high efficiency applications. |
| **Drain-source voltage (VDS)** | 100V | Suitable for power control circuits in the medium voltage range. |
| **Gate-source voltage (VGS)** | ±20V | Wide gate-source voltage range, suitable for various drive circuits. |
| **Throw-on voltage (Vth)** | 1.8V | Lower turn-on voltage helps reduce drive voltage requirements. |
| **On-resistance (RDS(ON))** | 35mΩ @ VGS=4.5V; 30mΩ @ VGS=10V | Lower on-resistance effectively reduces power loss. |
| **Maximum current (ID)** | 40A | Suitable for high current applications and can work stably under high load conditions. |
| **Technology** | Trench | Trench process provides low on-resistance and efficient switching characteristics. |

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Domain and module applications:

Applications and module examples

1. **Power Management Systems**
The STD20NF10T4-VB is widely used in power management systems, especially for efficient DC-DC converters and power modules. Its low on-resistance can significantly reduce power loss and improve overall conversion efficiency, and it performs well in power management systems such as electronic equipment, power tools, and LED driver power supplies.

2. **Electric Vehicles (EVs)**
In the battery management system (BMS) of electric vehicles, the STD20NF10T4-VB MOSFET can be used for battery charging and discharging control. Its high current carrying capacity (maximum current 40A) enables it to handle the high power requirements of the battery pack, while its low on-resistance helps reduce energy loss and extend battery life.

3. **Smart Battery Chargers**
This MOSFET is suitable for smart battery chargers, especially in situations where high charging voltage and current requirements are required. The STD20NF10T4-VB has fast switching characteristics and low on-resistance, which effectively ensures the efficient operation of the charger and reduces heating.

4. **Industrial Motor Drives**
In industrial motor drive systems, the STD20NF10T4-VB can be used as an efficient switching element and is widely used in the control circuits of stepper motors and DC motors. Its excellent on-characteristics and large current carrying capacity enable it to provide smooth and precise motor control.

5. **Renewable Energy Systems**
In renewable energy systems such as solar and wind power, the STD20NF10T4-VB is used for power conversion and power management. In particular, in the maximum power point tracking (MPPT) controller of photovoltaic power generation systems, the STD20NF10T4-VB MOSFET can efficiently handle the output current of solar panels and improve the overall efficiency of the system.

STD20NF10T4-VB MOSFET is widely used in power management, battery management, industrial automation, renewable energy and smart battery charging due to its excellent high current capability, low on-resistance and high-efficiency switching performance, providing reliable and efficient solutions for various high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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