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STD1NC60-1-VB Product details

Product introduction:

Product Introduction: STD1NC60-1-VB

STD1NC60-1-VB is a single N-channel power MOSFET in TO251 package, manufactured using planar technology (Planar), with excellent voltage resistance and low power loss characteristics, especially suitable for high voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which is suitable for processing high voltage signals, while the gate voltage (VGS) can operate in the range of ±30V. Its threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) is 4300mΩ@VGS=10V, which is suitable for low power consumption applications. The maximum drain current (ID) is 2A, which is very suitable for use in high voltage, low current power conversion and control modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 3.5V 2A 4300mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 650V 3.5V 2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 650V 3.5V 2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
Detailed parameter description

| Parameter | Value | Description|
|----------------|-----------------------------|-----------------------------------------|
| **Package** | TO251 | Small package for power switch applications with limited space. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch, providing efficient switching performance. |
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source withstand voltage for high-voltage applications. |
| **Gate voltage (VGS)** | ±30V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 4300mΩ@VGS=10V | On-resistance when VGS=10V, suitable for low-current applications. |
| **Drain Current (ID)** | 2A | Maximum continuous current, suitable for high voltage, low current applications. |
| **Technology** | Planar Technology (Planar) | Provides higher drain-source withstand voltage and lower power loss, suitable for high voltage applications. |

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Domain and module applications:

Application fields and module examples

1. **High-voltage power converter**
STD1NC60-1-VB is suitable for high-voltage power converters such as AC-DC converters, DC-DC converters, etc. Its high withstand voltage (650V) makes it an excellent performer in power modules, suitable for applications that need to handle high voltage but low current, such as switching elements in power supply and conversion systems.

2. **Home appliance applications**
In the field of home appliances, STD1NC60-1-VB can be used in high-voltage control systems such as motor control and lighting adjustment. Especially in equipment that requires precise control under high voltage (such as air conditioners, washing machines, microwave ovens, etc.), it provides high withstand voltage capability and efficient switching performance.

3. **Power tools and drive control systems**
STD1NC60-1-VB can be used in power tools and drive control modules, especially those that need to operate in high voltage environments. It can effectively control the start, stop and speed regulation of the motor to ensure stable operation of the drive system.

4. **Intelligent lighting control**
This MOSFET can also be used as a high-voltage switching element in intelligent lighting systems, especially in high-voltage intelligent lighting systems, it can efficiently switch current and adapt to high-power lighting adjustment needs.

STD1NC60-1-VB is an N-channel power MOSFET suitable for high-voltage, low-current load applications. With its high withstand voltage and low power loss, this device is very suitable for high-voltage switches, power modules, drive systems and other fields, and can provide stable switching performance in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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