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STD1NB80T4G-VB Product details
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STD1NB80T4G-VB Product Introduction
STD1NB80T4G-VB is a single-channel N-type MOSFET in TO252 package with 800V drain-source voltage (VDS) and 2A maximum continuous drain current (ID). The device adopts SJ_Multi-EPI technology to provide stable switching performance and excellent current control. Its on-resistance (RDS(ON)) is 2600mΩ (@VGS = 10V), which is suitable for high voltage and low power applications, especially in situations where high voltage tolerance is required. STD1NB80T4G-VB is mainly used in applications such as power conversion, power management, and electrical control, especially in high voltage and medium and low power environments.
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STD1NB80T4G-VB is a single-channel N-type MOSFET in TO252 package with 800V drain-source voltage (VDS) and 2A maximum continuous drain current (ID). The device adopts SJ_Multi-EPI technology to provide stable switching performance and excellent current control. Its on-resistance (RDS(ON)) is 2600mΩ (@VGS = 10V), which is suitable for high voltage and low power applications, especially in situations where high voltage tolerance is required. STD1NB80T4G-VB is mainly used in applications such as power conversion, power management, and electrical control, especially in high voltage and medium and low power environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD1NB80T4G-VB Parameter Description
| Parameter | Description|
|---------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain-Source Voltage (VDS)** | 800V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Turn-On Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 2600mΩ (@VGS = 10V) |
| **Maximum Drain Current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Package Characteristics** | TO252 Package for space constrained applications |
| **Switching performance** | Suitable for low to medium power, low conduction loss, high voltage power management applications |
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| Parameter | Description|
|---------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain-Source Voltage (VDS)** | 800V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Turn-On Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 2600mΩ (@VGS = 10V) |
| **Maximum Drain Current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Package Characteristics** | TO252 Package for space constrained applications |
| **Switching performance** | Suitable for low to medium power, low conduction loss, high voltage power management applications |
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Domain and module applications：
Application fields and module examples
1. **High-voltage power management system**
STD1NB80T4G-VB is suitable for high-voltage power management systems, especially in applications that require high voltage tolerance, such as industrial power converters, UPS (uninterruptible power supply) and high-voltage battery management systems. It can withstand drain-source voltages up to 800V and is suitable for power supply designs that require stable voltage output.
2. **Motor drive system**
In motor drive applications, STD1NB80T4G-VB can be used in high-voltage motor control circuits, especially in automotive electric drives, household appliances and industrial equipment. It can stably control current and provide efficient current conversion, suitable for motor drive systems in high-voltage environments.
3. **Switching power supply (SMPS)**
STD1NB80T4G-VB is an ideal choice in switching power supplies (SMPS), especially for high voltage applications such as TV power supplies, computer power supplies and household appliance power supplies. Due to its high VDS and low on-resistance, the device helps improve the energy efficiency of switching power supplies and reduces power consumption and heat generation.
4. **Inverter applications**
In inverter systems, the STD1NB80T4G-VB can be used to handle high voltage and medium current applications, such as photovoltaic inverters, power electronic converters, etc. This high-voltage MOSFET is able to provide stable current control and efficient energy conversion in these high-voltage conversion applications.
5. **Electrical switching and protection systems**
This MOSFET is also suitable for electrical switching and overvoltage protection systems. Due to its high voltage withstand capability and relatively high on-resistance, it is very suitable for applications that need to protect electrical systems from overvoltage damage, such as overvoltage protection circuits and high-voltage automatic switching circuits.
The STD1NB80T4G-VB is a high-quality MOSFET for high-voltage, low-power applications. Its application in power management, motor drive, switching power supplies and inverters can provide stable current control and efficient power conversion for the system.
1. **High-voltage power management system**
STD1NB80T4G-VB is suitable for high-voltage power management systems, especially in applications that require high voltage tolerance, such as industrial power converters, UPS (uninterruptible power supply) and high-voltage battery management systems. It can withstand drain-source voltages up to 800V and is suitable for power supply designs that require stable voltage output.
2. **Motor drive system**
In motor drive applications, STD1NB80T4G-VB can be used in high-voltage motor control circuits, especially in automotive electric drives, household appliances and industrial equipment. It can stably control current and provide efficient current conversion, suitable for motor drive systems in high-voltage environments.
3. **Switching power supply (SMPS)**
STD1NB80T4G-VB is an ideal choice in switching power supplies (SMPS), especially for high voltage applications such as TV power supplies, computer power supplies and household appliance power supplies. Due to its high VDS and low on-resistance, the device helps improve the energy efficiency of switching power supplies and reduces power consumption and heat generation.
4. **Inverter applications**
In inverter systems, the STD1NB80T4G-VB can be used to handle high voltage and medium current applications, such as photovoltaic inverters, power electronic converters, etc. This high-voltage MOSFET is able to provide stable current control and efficient energy conversion in these high-voltage conversion applications.
5. **Electrical switching and protection systems**
This MOSFET is also suitable for electrical switching and overvoltage protection systems. Due to its high voltage withstand capability and relatively high on-resistance, it is very suitable for applications that need to protect electrical systems from overvoltage damage, such as overvoltage protection circuits and high-voltage automatic switching circuits.
The STD1NB80T4G-VB is a high-quality MOSFET for high-voltage, low-power applications. Its application in power management, motor drive, switching power supplies and inverters can provide stable current control and efficient power conversion for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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