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STD1NB80CDT-TR-VB Product details
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STD1NB80CDT-TR-VB Product Introduction
STD1NB80CDT-TR-VB is a high-performance N-channel power MOSFET in a TO-252 package for high voltage applications. Its drain-source voltage (VDS) reaches 800V and has a gate-source voltage (VGS) limit of ±30V, making it suitable for use in high-voltage circuits. The MOSFET has a turn-on voltage (Vth) of 3.5V and a high on-resistance (RDS(ON) = 2600mΩ @ VGS=10V), which makes it suitable for applications with low current but high voltage requirements. Using SJ_Multi-EPI technology, this MOSFET provides efficient performance and reliability, and can operate for a long time in harsh environments.
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STD1NB80CDT-TR-VB is a high-performance N-channel power MOSFET in a TO-252 package for high voltage applications. Its drain-source voltage (VDS) reaches 800V and has a gate-source voltage (VGS) limit of ±30V, making it suitable for use in high-voltage circuits. The MOSFET has a turn-on voltage (Vth) of 3.5V and a high on-resistance (RDS(ON) = 2600mΩ @ VGS=10V), which makes it suitable for applications with low current but high voltage requirements. Using SJ_Multi-EPI technology, this MOSFET provides efficient performance and reliability, and can operate for a long time in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed description of parameters
| **Parameter name** | **Parameter value** | **Description** |
|--------------------|---------------------------|---------------------------------------------|
| **Package type** | TO-252 | Suitable for surface mount (SMD), good heat dissipation performance, compact design. |
| **Channel configuration** | Single N-channel | Provides excellent switching characteristics and lower drive voltage. |
| **Drain-source voltage (VDS)** | 800V | Suitable for high voltage applications, suitable for industrial power equipment and high voltage circuits. |
| **Gate-source voltage (VGS)** | ±30V | Wide gate-source voltage range, suitable for a variety of drive circuits. |
| **Throw-on voltage (Vth)** | 3.5V | Higher turn-on voltage, suitable for various control requirements. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V | Higher on-resistance, suitable for small and medium current applications, reducing power loss. |
| **Maximum current (ID)** | 2A | Maximum current carrying capacity, suitable for low power, high voltage applications. |
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, enhanced power loss and thermal management capabilities. |
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| **Parameter name** | **Parameter value** | **Description** |
|--------------------|---------------------------|---------------------------------------------|
| **Package type** | TO-252 | Suitable for surface mount (SMD), good heat dissipation performance, compact design. |
| **Channel configuration** | Single N-channel | Provides excellent switching characteristics and lower drive voltage. |
| **Drain-source voltage (VDS)** | 800V | Suitable for high voltage applications, suitable for industrial power equipment and high voltage circuits. |
| **Gate-source voltage (VGS)** | ±30V | Wide gate-source voltage range, suitable for a variety of drive circuits. |
| **Throw-on voltage (Vth)** | 3.5V | Higher turn-on voltage, suitable for various control requirements. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V | Higher on-resistance, suitable for small and medium current applications, reducing power loss. |
| **Maximum current (ID)** | 2A | Maximum current carrying capacity, suitable for low power, high voltage applications. |
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, enhanced power loss and thermal management capabilities. |
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Domain and module applications：
Application fields and module examples
1. **High Voltage Power Supply**
STD1NB80CDT-TR-VB is suitable for high voltage power supply systems, especially in applications that require 800V working voltage. For example, in high voltage power adapters and industrial equipment power modules, it can provide stable current control and voltage regulation to ensure the efficiency and safety of equipment operation.
2. **Power Tools**
In power tools, especially some power tools that require high voltage drive (such as electric saws, grinders, etc.), STD1NB80CDT-TR-VB MOSFET can be used in high voltage drive circuits and power converters. Its stable operation and durability under high voltage conditions make it suitable for tools that require higher working voltage.
3. **Battery Management Systems**
In battery management systems, STD1NB80CDT-TR-VB is used for high voltage battery charging and discharging management to ensure stable operation of the battery under high voltage conditions. It can effectively control the current and ensure the safety and efficiency of the battery, especially for high-voltage battery systems such as electric vehicles (EV).
4. **Industrial Automation**
In industrial automation systems, this MOSFET can be used in high-voltage control and conversion equipment. For example, fields such as automated machinery and industrial drive systems require high-voltage, high-power switching elements. The STD1NB80CDT-TR-VB can meet these needs and provide stable and reliable power control.
5. **Uninterruptible Power Supply (UPS)**
In uninterruptible power supply systems, the STD1NB80CDT-TR-VB can be used as a switching element for high-voltage power supplies to ensure continuous power supply when the power is interrupted. Its high voltage tolerance makes it very effective in such applications, especially large UPS systems.
The high withstand voltage and reliability of STD1NB80CDT-TR-VB MOSFET make it widely used in many fields such as high-voltage power supplies, high-power power tools, battery management systems, industrial automation and UPS, providing efficient and reliable current control and power conversion solutions for various applications.
1. **High Voltage Power Supply**
STD1NB80CDT-TR-VB is suitable for high voltage power supply systems, especially in applications that require 800V working voltage. For example, in high voltage power adapters and industrial equipment power modules, it can provide stable current control and voltage regulation to ensure the efficiency and safety of equipment operation.
2. **Power Tools**
In power tools, especially some power tools that require high voltage drive (such as electric saws, grinders, etc.), STD1NB80CDT-TR-VB MOSFET can be used in high voltage drive circuits and power converters. Its stable operation and durability under high voltage conditions make it suitable for tools that require higher working voltage.
3. **Battery Management Systems**
In battery management systems, STD1NB80CDT-TR-VB is used for high voltage battery charging and discharging management to ensure stable operation of the battery under high voltage conditions. It can effectively control the current and ensure the safety and efficiency of the battery, especially for high-voltage battery systems such as electric vehicles (EV).
4. **Industrial Automation**
In industrial automation systems, this MOSFET can be used in high-voltage control and conversion equipment. For example, fields such as automated machinery and industrial drive systems require high-voltage, high-power switching elements. The STD1NB80CDT-TR-VB can meet these needs and provide stable and reliable power control.
5. **Uninterruptible Power Supply (UPS)**
In uninterruptible power supply systems, the STD1NB80CDT-TR-VB can be used as a switching element for high-voltage power supplies to ensure continuous power supply when the power is interrupted. Its high voltage tolerance makes it very effective in such applications, especially large UPS systems.
The high withstand voltage and reliability of STD1NB80CDT-TR-VB MOSFET make it widely used in many fields such as high-voltage power supplies, high-power power tools, battery management systems, industrial automation and UPS, providing efficient and reliable current control and power conversion solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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