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STD1NB50-1-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**STD1NB50-1-VB** is a single N-channel MOSFET in TO251 package with a drain-source voltage (VDS) of 650V, suitable for high voltage power systems. Its maximum drain current (ID) is 2A, and it has a high RDS(ON) value of 4300mΩ (at VGS=10V), which means it is mainly used in applications with lower currents and low switching loss requirements. This MOSFET uses Plannar technology and is suitable for control and regulation tasks that require low conduction losses in high voltage scenarios. STD1NB50-1-VB is widely used in industrial power control, high voltage power management, and automotive electronics.
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**STD1NB50-1-VB** is a single N-channel MOSFET in TO251 package with a drain-source voltage (VDS) of 650V, suitable for high voltage power systems. Its maximum drain current (ID) is 2A, and it has a high RDS(ON) value of 4300mΩ (at VGS=10V), which means it is mainly used in applications with lower currents and low switching loss requirements. This MOSFET uses Plannar technology and is suitable for control and regulation tasks that require low conduction losses in high voltage scenarios. STD1NB50-1-VB is widely used in industrial power control, high voltage power management, and automotive electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description
| Parameter | Value | Description|
|-----------------|----------------------------------|------------------------------------------------|
| **Package** | TO251 | TO251 package, suitable for surface mounting, convenient for efficient heat dissipation and high power applications|
| **Configuration** | Single N-channel | N-channel configuration, optimized switching performance, suitable for efficient control and switching current|
| **VDS** | 650V | Drain-source voltage, suitable for high-voltage power management and switching circuits|
| **VGS** | ±30V | Gate-source voltage, supports bidirectional drive, adapts to a variety of power control methods|
| **Vth** | 3.5V | Threshold voltage, ensures good switching performance of MOSFET|
| **RDS(ON)** | 4300mΩ@VGS=10V | Higher on-resistance for lower current applications|
| **ID** | 2A | Drain current for low to medium power applications|
| **Technology** | Plannar | Based on Plannar technology for high voltage switching and control applications|
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| Parameter | Value | Description|
|-----------------|----------------------------------|------------------------------------------------|
| **Package** | TO251 | TO251 package, suitable for surface mounting, convenient for efficient heat dissipation and high power applications|
| **Configuration** | Single N-channel | N-channel configuration, optimized switching performance, suitable for efficient control and switching current|
| **VDS** | 650V | Drain-source voltage, suitable for high-voltage power management and switching circuits|
| **VGS** | ±30V | Gate-source voltage, supports bidirectional drive, adapts to a variety of power control methods|
| **Vth** | 3.5V | Threshold voltage, ensures good switching performance of MOSFET|
| **RDS(ON)** | 4300mΩ@VGS=10V | Higher on-resistance for lower current applications|
| **ID** | 2A | Drain current for low to medium power applications|
| **Technology** | Plannar | Based on Plannar technology for high voltage switching and control applications|
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Domain and module applications：
3. Application fields and module examples
1. **High-voltage power management**
**Switching power supply**: STD1NB50-1-VB is suitable for various high-voltage power management modules, such as AC-DC converters, DC-DC converters, etc., especially in situations where the voltage requirements are high. Although its on-resistance is relatively high, it is still suitable for low-current applications that do not have particularly strict requirements on power loss.
**Battery management system (BMS)**: This MOSFET can be used in battery management systems, especially in medium and low power battery charge and discharge management modules, to support voltage regulation and protection of high voltage systems.
2. **Industrial power control**
**Inverter**: STD1NB50-1-VB can be used in industrial inverters, especially in the demand for high voltage control during power conversion. It can be used in medium-power inverters to convert power and provide high voltage to low voltage power conversion.
**Motor drive system**: In industrial automation, especially in drive circuits for motor control, this MOSFET is suitable for motor switch control and is suitable for low current load occasions such as small power tools, fans, etc.
3. **Automotive electronics**
**Electric vehicle (EV) control system**: STD1NB50-1-VB is suitable for electric vehicle power conversion systems, especially in battery pack management systems and power regulation modules that require high voltage processing, which can ensure the voltage stability of electric vehicle systems.
**Automotive power management system**: In the field of automotive electronics, this MOSFET can be used in high-voltage on-board power management systems to provide voltage regulation and current control, especially for the management of auxiliary power modules or high-voltage battery packs.
4. **Solar inverter**
**Solar panel management**: STD1NB50-1-VB can be used in solar inverters to convert solar energy into AC power suitable for home or industrial use, especially for low-power solar power stations and small home solar systems, ensuring high efficiency and stability in the power conversion process.
With its 650V VDS and 2A drain current capability, the STD1NB50-1-VB is suitable for a variety of high-voltage power management and medium-power applications, especially in power conversion and control modules where stable switching performance is required and conduction loss requirements are not stringent.
1. **High-voltage power management**
**Switching power supply**: STD1NB50-1-VB is suitable for various high-voltage power management modules, such as AC-DC converters, DC-DC converters, etc., especially in situations where the voltage requirements are high. Although its on-resistance is relatively high, it is still suitable for low-current applications that do not have particularly strict requirements on power loss.
**Battery management system (BMS)**: This MOSFET can be used in battery management systems, especially in medium and low power battery charge and discharge management modules, to support voltage regulation and protection of high voltage systems.
2. **Industrial power control**
**Inverter**: STD1NB50-1-VB can be used in industrial inverters, especially in the demand for high voltage control during power conversion. It can be used in medium-power inverters to convert power and provide high voltage to low voltage power conversion.
**Motor drive system**: In industrial automation, especially in drive circuits for motor control, this MOSFET is suitable for motor switch control and is suitable for low current load occasions such as small power tools, fans, etc.
3. **Automotive electronics**
**Electric vehicle (EV) control system**: STD1NB50-1-VB is suitable for electric vehicle power conversion systems, especially in battery pack management systems and power regulation modules that require high voltage processing, which can ensure the voltage stability of electric vehicle systems.
**Automotive power management system**: In the field of automotive electronics, this MOSFET can be used in high-voltage on-board power management systems to provide voltage regulation and current control, especially for the management of auxiliary power modules or high-voltage battery packs.
4. **Solar inverter**
**Solar panel management**: STD1NB50-1-VB can be used in solar inverters to convert solar energy into AC power suitable for home or industrial use, especially for low-power solar power stations and small home solar systems, ensuring high efficiency and stability in the power conversion process.
With its 650V VDS and 2A drain current capability, the STD1NB50-1-VB is suitable for a variety of high-voltage power management and medium-power applications, especially in power conversion and control modules where stable switching performance is required and conduction loss requirements are not stringent.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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