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STD1NA60-1-VB Product details
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Product Introduction: STD1NA60-1-VB
STD1NA60-1-VB is a single N-channel power MOSFET in TO251 package. It adopts planar technology (Planar) design, has high withstand voltage and low power loss, and is suitable for low current and high voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which is suitable for high voltage switching power supplies, inverters, drives and other application scenarios. Its gate voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, which keeps it in a stable working state when turned on. The on-resistance (RDS(ON)) is 4300mΩ@VGS=10V, which is suitable for medium and low current applications with low power loss. The maximum drain current (ID) is 2A, which is suitable for high voltage and low current power conversion and control modules.
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STD1NA60-1-VB is a single N-channel power MOSFET in TO251 package. It adopts planar technology (Planar) design, has high withstand voltage and low power loss, and is suitable for low current and high voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which is suitable for high voltage switching power supplies, inverters, drives and other application scenarios. Its gate voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, which keeps it in a stable working state when turned on. The on-resistance (RDS(ON)) is 4300mΩ@VGS=10V, which is suitable for medium and low current applications with low power loss. The maximum drain current (ID) is 2A, which is suitable for high voltage and low current power conversion and control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|----------------------------|-----------------------------------------|
| **Package** | TO251 | Small package for space-constrained power applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications, providing efficient switching performance. |
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source withstand voltage for high-voltage applications. |
| **Gate voltage (VGS)** | ±30V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 4300mΩ@VGS=10V | On-resistance at VGS=10V, suitable for low current, low power loss applications. |
| **Drain Current (ID)** | 2A | Maximum continuous current, suitable for high voltage and low current applications. |
| **Technology** | Planar Technology | Provides higher drain-source withstand voltage and lower power loss, suitable for high voltage applications. |
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| Parameter | Value | Description|
|----------------|----------------------------|-----------------------------------------|
| **Package** | TO251 | Small package for space-constrained power applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications, providing efficient switching performance. |
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source withstand voltage for high-voltage applications. |
| **Gate voltage (VGS)** | ±30V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 4300mΩ@VGS=10V | On-resistance at VGS=10V, suitable for low current, low power loss applications. |
| **Drain Current (ID)** | 2A | Maximum continuous current, suitable for high voltage and low current applications. |
| **Technology** | Planar Technology | Provides higher drain-source withstand voltage and lower power loss, suitable for high voltage applications. |
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Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**
STD1NA60-1-VB is suitable for high-voltage power converters such as AC-DC converters, DC-DC converters, etc. Its high withstand voltage (650V) makes it excellent in handling high voltage inputs, and is suitable for use in the switching element part of power modules, especially in applications that require high withstand voltage but low current.
2. **Home appliance applications**
In home appliances, STD1NA60-1-VB can be used in high-voltage control systems such as motor drive circuits in air conditioners, washing machines, and refrigerators. Its high withstand voltage characteristics ensure that these devices can work stably even in environments with large voltage fluctuations.
3. **Inverter applications**
In inverters and speed drives, STD1NA60-1-VB is suitable for low-current control modules to help adjust the speed and power output of motors. Due to its high drain-source withstand voltage, it is suitable for switch control in high-voltage environments.
4. **Lighting and lighting control**
STD1NA60-1-VB can also play a role in intelligent lighting control systems as a high-voltage switching element to regulate current and power in lighting systems. In lighting modules that require high-voltage switches, STD1NA60-1-VB provides efficient and reliable performance.
STD1NA60-1-VB is an N-channel power MOSFET suitable for high-voltage, low-current load applications. Its high voltage and low power loss make it an ideal choice for many high-efficiency power conversion and control applications.
1. **High-voltage power converter**
STD1NA60-1-VB is suitable for high-voltage power converters such as AC-DC converters, DC-DC converters, etc. Its high withstand voltage (650V) makes it excellent in handling high voltage inputs, and is suitable for use in the switching element part of power modules, especially in applications that require high withstand voltage but low current.
2. **Home appliance applications**
In home appliances, STD1NA60-1-VB can be used in high-voltage control systems such as motor drive circuits in air conditioners, washing machines, and refrigerators. Its high withstand voltage characteristics ensure that these devices can work stably even in environments with large voltage fluctuations.
3. **Inverter applications**
In inverters and speed drives, STD1NA60-1-VB is suitable for low-current control modules to help adjust the speed and power output of motors. Due to its high drain-source withstand voltage, it is suitable for switch control in high-voltage environments.
4. **Lighting and lighting control**
STD1NA60-1-VB can also play a role in intelligent lighting control systems as a high-voltage switching element to regulate current and power in lighting systems. In lighting modules that require high-voltage switches, STD1NA60-1-VB provides efficient and reliable performance.
STD1NA60-1-VB is an N-channel power MOSFET suitable for high-voltage, low-current load applications. Its high voltage and low power loss make it an ideal choice for many high-efficiency power conversion and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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