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STD17NE03LT4-VB Product details
Back to previous pageProduct introduction：
1. STD17NE03LT4-VB Product Introduction
STD17NE03LT4-VB is a high-performance N-channel MOSFET in TO252 package, suitable for a variety of low-voltage, high-current power management and switch control applications. The drain-source voltage (VDS) of this MOSFET can reach 30V, the gate-source voltage (VGS) can withstand a maximum of ±20V, and the gate threshold voltage is 1.7V. Its on-resistance (RDS(ON)) is 7mΩ at VGS=10V, and the conduction loss is low, which can improve the working efficiency of the system. It has a maximum drain current (ID) of up to 70A and uses Trench technology to provide excellent switching performance and current conduction characteristics. STD17NE03LT4-VB is widely used in power management, motor control, LED drive and battery management, and is particularly suitable for applications that require high efficiency and low heat loss.
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STD17NE03LT4-VB is a high-performance N-channel MOSFET in TO252 package, suitable for a variety of low-voltage, high-current power management and switch control applications. The drain-source voltage (VDS) of this MOSFET can reach 30V, the gate-source voltage (VGS) can withstand a maximum of ±20V, and the gate threshold voltage is 1.7V. Its on-resistance (RDS(ON)) is 7mΩ at VGS=10V, and the conduction loss is low, which can improve the working efficiency of the system. It has a maximum drain current (ID) of up to 70A and uses Trench technology to provide excellent switching performance and current conduction characteristics. STD17NE03LT4-VB is widely used in power management, motor control, LED drive and battery management, and is particularly suitable for applications that require high efficiency and low heat loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|----------------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density circuit design. |
| **Configuration** | Single N-channel | Single-channel MOSFET, suitable for switch control applications. |
| **Drain-source voltage (VDS)** | 30V | Suitable for low-voltage power supplies and medium-low voltage systems. |
| **Gate-source voltage (VGS)** | ±20V | Supports a wide gate drive voltage range. |
| **Gate threshold voltage (Vth)** | 1.7V | Low gate threshold voltage to ensure fast switching response. |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS=4.5V | Low on-resistance to reduce conduction losses. |
| **On-resistance (RDS(ON))** | 7mΩ @ VGS=10V | Further reduce conduction loss and improve overall efficiency. |
| **Maximum drain current (ID)** | 70A | High current carrying capacity, suitable for high current applications. |
| **Technology type** | Trench | Adopts Trench technology to optimize switching performance and current conduction characteristics. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|----------------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density circuit design. |
| **Configuration** | Single N-channel | Single-channel MOSFET, suitable for switch control applications. |
| **Drain-source voltage (VDS)** | 30V | Suitable for low-voltage power supplies and medium-low voltage systems. |
| **Gate-source voltage (VGS)** | ±20V | Supports a wide gate drive voltage range. |
| **Gate threshold voltage (Vth)** | 1.7V | Low gate threshold voltage to ensure fast switching response. |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS=4.5V | Low on-resistance to reduce conduction losses. |
| **On-resistance (RDS(ON))** | 7mΩ @ VGS=10V | Further reduce conduction loss and improve overall efficiency. |
| **Maximum drain current (ID)** | 70A | High current carrying capacity, suitable for high current applications. |
| **Technology type** | Trench | Adopts Trench technology to optimize switching performance and current conduction characteristics. |
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Domain and module applications：
III. Applicable fields and application examples of modules
1. **Power management and conversion**
- **DC-DC converter**: The low on-resistance and high current carrying capacity of STD17NE03LT4-VB make it an excellent performer in DC-DC converters. Especially in applications that require high efficiency and low heat loss, such as portable electronic devices, power tools and wearable devices, it can effectively improve the voltage conversion efficiency.
- **Power adapter**: In the power adapter circuit, STD17NE03LT4-VB can significantly reduce power loss and provide a stable output voltage to ensure the reliability of the equipment. It is widely used in notebook power supplies, battery chargers, etc.
2. **Battery management and charging system**
- **Battery charger**: Due to its low on-resistance and high current capability, STD17NE03LT4-VB is very suitable for battery charging systems to provide efficient power transmission, especially in electric vehicles and high-power battery management systems, which can ensure efficient and safe operation during the charging process.
- **Battery balancing circuit**: This MOSFET is also widely used in battery balancing circuits, which can help battery packs achieve charge balance between different cells, extend battery life and improve safety.
3. **Motor control**
- **DC motor drive**: In DC motor control, STD17NE03LT4-VB provides excellent current conduction capability and is suitable for high current drive occasions such as power tools, robot drive systems, etc. Its low on-resistance ensures the stability and efficiency of the motor under load.
- **Stepper motor drive**: This MOSFET is also very suitable for stepper motor drive systems, which can stably control the current of the motor and ensure accurate stepping control. It is suitable for automation equipment and precision control systems.
4. **LED drive and lighting**
- **LED lighting system**: The low on-resistance and high current capability of STD17NE03LT4-VB make it an ideal choice for LED lighting systems. It can improve the efficiency of LED lighting and reduce heat generation, and is suitable for LED lamps and intelligent lighting systems.
- **LED backlight driver**: In the LED backlight driver of TVs, monitors and other devices, STD17NE03LT4-VB has good switching characteristics and high current conduction capability, which helps to provide stable and efficient light source drive and improve display effects.
STD17NE03LT4-VB MOSFET is suitable for power management, battery management, drive control, LED lighting and other fields through its excellent conduction performance and high current carrying capacity, providing high-efficiency and low heat loss solutions to meet the requirements of modern electronic systems for high efficiency and reliability.
1. **Power management and conversion**
- **DC-DC converter**: The low on-resistance and high current carrying capacity of STD17NE03LT4-VB make it an excellent performer in DC-DC converters. Especially in applications that require high efficiency and low heat loss, such as portable electronic devices, power tools and wearable devices, it can effectively improve the voltage conversion efficiency.
- **Power adapter**: In the power adapter circuit, STD17NE03LT4-VB can significantly reduce power loss and provide a stable output voltage to ensure the reliability of the equipment. It is widely used in notebook power supplies, battery chargers, etc.
2. **Battery management and charging system**
- **Battery charger**: Due to its low on-resistance and high current capability, STD17NE03LT4-VB is very suitable for battery charging systems to provide efficient power transmission, especially in electric vehicles and high-power battery management systems, which can ensure efficient and safe operation during the charging process.
- **Battery balancing circuit**: This MOSFET is also widely used in battery balancing circuits, which can help battery packs achieve charge balance between different cells, extend battery life and improve safety.
3. **Motor control**
- **DC motor drive**: In DC motor control, STD17NE03LT4-VB provides excellent current conduction capability and is suitable for high current drive occasions such as power tools, robot drive systems, etc. Its low on-resistance ensures the stability and efficiency of the motor under load.
- **Stepper motor drive**: This MOSFET is also very suitable for stepper motor drive systems, which can stably control the current of the motor and ensure accurate stepping control. It is suitable for automation equipment and precision control systems.
4. **LED drive and lighting**
- **LED lighting system**: The low on-resistance and high current capability of STD17NE03LT4-VB make it an ideal choice for LED lighting systems. It can improve the efficiency of LED lighting and reduce heat generation, and is suitable for LED lamps and intelligent lighting systems.
- **LED backlight driver**: In the LED backlight driver of TVs, monitors and other devices, STD17NE03LT4-VB has good switching characteristics and high current conduction capability, which helps to provide stable and efficient light source drive and improve display effects.
STD17NE03LT4-VB MOSFET is suitable for power management, battery management, drive control, LED lighting and other fields through its excellent conduction performance and high current carrying capacity, providing high-efficiency and low heat loss solutions to meet the requirements of modern electronic systems for high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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