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STD16NF06-VB Product details
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Product Introduction: STD16NF06-VB
STD16NF06-VB is a single N-channel power MOSFET in TO252 package. It adopts Trench technology, has low on-resistance and high current carrying capacity, and is suitable for medium voltage and high-efficiency switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for various power conversion and power management scenarios. Its gate voltage (VGS) range is ±20V, with a threshold voltage (Vth) of 1.7V, which can be turned on at a lower gate voltage and has good switching performance. Its on-resistance is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, which makes it have lower conduction loss under high current load. The maximum drain current (ID) is 18A, which is suitable for power management, battery drive and industrial applications.
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STD16NF06-VB is a single N-channel power MOSFET in TO252 package. It adopts Trench technology, has low on-resistance and high current carrying capacity, and is suitable for medium voltage and high-efficiency switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for various power conversion and power management scenarios. Its gate voltage (VGS) range is ±20V, with a threshold voltage (Vth) of 1.7V, which can be turned on at a lower gate voltage and has good switching performance. Its on-resistance is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, which makes it have lower conduction loss under high current load. The maximum drain current (ID) is 18A, which is suitable for power management, battery drive and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|-----------------------------|-----------------------------------------|
| **Package** | TO252 | Small package for space-constrained power applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications, providing efficient switching performance. |
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source withstand voltage, suitable for medium-voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 85mΩ@VGS=4.5V | On-resistance at VGS=4.5V, providing low conduction losses. |
| | 73mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | 18A | Maximum continuous current, suitable for high current load applications. |
| **Technology** | Trench Technology | Using Trench technology to provide lower on-resistance and high performance. |
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| Parameter | Value | Description|
|----------------|-----------------------------|-----------------------------------------|
| **Package** | TO252 | Small package for space-constrained power applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications, providing efficient switching performance. |
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source withstand voltage, suitable for medium-voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 85mΩ@VGS=4.5V | On-resistance at VGS=4.5V, providing low conduction losses. |
| | 73mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | 18A | Maximum continuous current, suitable for high current load applications. |
| **Technology** | Trench Technology | Using Trench technology to provide lower on-resistance and high performance. |
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Domain and module applications：
Application fields and module examples
1. **Power management system**
STD16NF06-VB is widely used in power management systems, especially DC-DC converters, battery management systems (BMS) and switching power supplies. Its low on-resistance characteristics minimize power loss and improve system efficiency. It can be used in the switch control part of the power module to help improve conversion efficiency and system stability.
2. **Automotive electronics**
In the field of automotive electronics, STD16NF06-VB can be used in applications such as on-board power converters, power windows, and on-board battery management systems (BMS). Due to its high current carrying capacity, it can meet the needs of efficient switching and power control in electric vehicles as well as traditional vehicles.
3. **Motor drive applications**
In motor drive systems, STD16NF06-VB is suitable for various motor control applications, such as DC motor drives in industrial automation, fan control systems, etc. Its low on-resistance and high current capability enable it to have higher efficiency and stability when handling motor start-stop and speed regulation.
4. **Consumer Electronics**
In the field of consumer electronics, STD16NF06-VB can be used in the power management part of smartphones, battery-powered devices, LED lighting, etc. Its efficient switching performance and low power consumption characteristics help to extend the battery life of the device and reduce energy loss.
As an N-channel power MOSFET with excellent performance, STD16NF06-VB is widely used in power management, electric vehicles, industrial control and consumer electronics. Its low on-resistance and high current carrying capacity enable it to perform well in high-efficiency and high-current load applications.
1. **Power management system**
STD16NF06-VB is widely used in power management systems, especially DC-DC converters, battery management systems (BMS) and switching power supplies. Its low on-resistance characteristics minimize power loss and improve system efficiency. It can be used in the switch control part of the power module to help improve conversion efficiency and system stability.
2. **Automotive electronics**
In the field of automotive electronics, STD16NF06-VB can be used in applications such as on-board power converters, power windows, and on-board battery management systems (BMS). Due to its high current carrying capacity, it can meet the needs of efficient switching and power control in electric vehicles as well as traditional vehicles.
3. **Motor drive applications**
In motor drive systems, STD16NF06-VB is suitable for various motor control applications, such as DC motor drives in industrial automation, fan control systems, etc. Its low on-resistance and high current capability enable it to have higher efficiency and stability when handling motor start-stop and speed regulation.
4. **Consumer Electronics**
In the field of consumer electronics, STD16NF06-VB can be used in the power management part of smartphones, battery-powered devices, LED lighting, etc. Its efficient switching performance and low power consumption characteristics help to extend the battery life of the device and reduce energy loss.
As an N-channel power MOSFET with excellent performance, STD16NF06-VB is widely used in power management, electric vehicles, industrial control and consumer electronics. Its low on-resistance and high current carrying capacity enable it to perform well in high-efficiency and high-current load applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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