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STD16NE10T4-VB Product details
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STD16NE10T4-VB Product Introduction
STD16NE10T4-VB is a single-channel N-type power MOSFET in TO252 package, designed for high-efficiency power management. With a maximum drain-source voltage of 100V and a continuous drain current of 25A, the device is suitable for medium and high voltage applications. Its on-resistance is 57mΩ (@VGS = 4.5V) and 55mΩ (@VGS = 10V), respectively, which is ideal for low-power and high-efficiency power conversion. STD16NE10T4-VB uses Trench technology, which excels in increasing switching speed and reducing switching losses, giving it an advantage in high-frequency applications. This device is particularly suitable for use in power management, electric drive systems, and power conversion applications.
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STD16NE10T4-VB is a single-channel N-type power MOSFET in TO252 package, designed for high-efficiency power management. With a maximum drain-source voltage of 100V and a continuous drain current of 25A, the device is suitable for medium and high voltage applications. Its on-resistance is 57mΩ (@VGS = 4.5V) and 55mΩ (@VGS = 10V), respectively, which is ideal for low-power and high-efficiency power conversion. STD16NE10T4-VB uses Trench technology, which excels in increasing switching speed and reducing switching losses, giving it an advantage in high-frequency applications. This device is particularly suitable for use in power management, electric drive systems, and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD16NE10T4-VB parameter description
| Parameter | Description |
|----------------------|-------------------------------------------------|
| **Package type** | TO252 |
| **Configuration** | Single channel N-type MOSFET |
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 57mΩ (@VGS = 4.5V)
55mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 25A |
| **Technology** | Trench technology |
| **Operating junction temperature range** | -55°C to +150°C |
| **Switching performance** | High frequency switching performance, suitable for fast switching applications|
| **Package characteristics** | Small TO252 package, suitable for space-saving circuit design|
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| Parameter | Description |
|----------------------|-------------------------------------------------|
| **Package type** | TO252 |
| **Configuration** | Single channel N-type MOSFET |
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 57mΩ (@VGS = 4.5V)
55mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 25A |
| **Technology** | Trench technology |
| **Operating junction temperature range** | -55°C to +150°C |
| **Switching performance** | High frequency switching performance, suitable for fast switching applications|
| **Package characteristics** | Small TO252 package, suitable for space-saving circuit design|
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Domain and module applications：
Application fields and module examples
1. **DC-DC converter**
STD16NE10T4-VB is very suitable for efficient DC-DC converter circuits, especially when voltage conversion requires higher current, such as in battery-powered systems. Its low on-resistance and high current carrying capacity can effectively improve conversion efficiency and reduce system losses, and is particularly suitable for applications such as portable devices and power tools.
2. **Power management system (PMU)**
In power management systems, STD16NE10T4-VB can be used as an efficient switching element for voltage regulation and power conversion modules. It can optimize the energy efficiency of the power supply and provide stable power output. It is widely used in computer power supplies, consumer electronic devices, and industrial equipment.
3. **Electric drive system**
In electric drive systems, STD16NE10T4-VB can be used in motor drive circuits for equipment such as electric vehicles, power tools, and robots. Its low on-resistance and high current carrying capacity can ensure the efficient operation of the motor drive circuit, reduce energy loss, and improve the overall efficiency of the system.
4. **Automotive electronics**
This MOSFET is also suitable for power management applications in automotive electronic systems, such as battery management systems, inverters, and charging systems. In these applications, the STD16NE10T4-VB can efficiently convert electrical energy, provide a stable power supply, and ensure the reliability and efficiency of the automotive electrical system.
5. **LED driver power supply**
The STD16NE10T4-VB can be used in high-efficiency LED driver power supplies, especially in situations where high current drive is required, such as high-power LED lighting or display applications. Its low RDS(ON) and high current carrying capacity can effectively improve the efficiency and reliability of the LED drive system and reduce energy waste.
STD16NE10T4-VB is a high-efficiency, low-power power MOSFET. With its excellent conduction performance and high current handling capability, it is widely used in power management, electric drive, automotive electronics and other fields.
1. **DC-DC converter**
STD16NE10T4-VB is very suitable for efficient DC-DC converter circuits, especially when voltage conversion requires higher current, such as in battery-powered systems. Its low on-resistance and high current carrying capacity can effectively improve conversion efficiency and reduce system losses, and is particularly suitable for applications such as portable devices and power tools.
2. **Power management system (PMU)**
In power management systems, STD16NE10T4-VB can be used as an efficient switching element for voltage regulation and power conversion modules. It can optimize the energy efficiency of the power supply and provide stable power output. It is widely used in computer power supplies, consumer electronic devices, and industrial equipment.
3. **Electric drive system**
In electric drive systems, STD16NE10T4-VB can be used in motor drive circuits for equipment such as electric vehicles, power tools, and robots. Its low on-resistance and high current carrying capacity can ensure the efficient operation of the motor drive circuit, reduce energy loss, and improve the overall efficiency of the system.
4. **Automotive electronics**
This MOSFET is also suitable for power management applications in automotive electronic systems, such as battery management systems, inverters, and charging systems. In these applications, the STD16NE10T4-VB can efficiently convert electrical energy, provide a stable power supply, and ensure the reliability and efficiency of the automotive electrical system.
5. **LED driver power supply**
The STD16NE10T4-VB can be used in high-efficiency LED driver power supplies, especially in situations where high current drive is required, such as high-power LED lighting or display applications. Its low RDS(ON) and high current carrying capacity can effectively improve the efficiency and reliability of the LED drive system and reduce energy waste.
STD16NE10T4-VB is a high-efficiency, low-power power MOSFET. With its excellent conduction performance and high current handling capability, it is widely used in power management, electric drive, automotive electronics and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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