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STD1530PL-VB Product details
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Product Introduction: STD1530PL-VB
STD1530PL-VB is a single P-channel power MOSFET in TO251 package. It adopts advanced Trench technology, has low on-resistance and high current carrying capacity, and is suitable for high-efficiency power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, which is suitable for low-voltage power applications. Its gate voltage (VGS) range is ±20V, and it has a threshold voltage (Vth) of -1.7V, which enables it to be stably turned on at a lower gate voltage. Its on-resistance is 22mΩ at VGS=4.5V and 18mΩ at VGS=10V, which makes it have lower losses under high current loads. The maximum drain current (ID) is -40A, which is suitable for power management, load switching and motor drive.
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STD1530PL-VB is a single P-channel power MOSFET in TO251 package. It adopts advanced Trench technology, has low on-resistance and high current carrying capacity, and is suitable for high-efficiency power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, which is suitable for low-voltage power applications. Its gate voltage (VGS) range is ±20V, and it has a threshold voltage (Vth) of -1.7V, which enables it to be stably turned on at a lower gate voltage. Its on-resistance is 22mΩ at VGS=4.5V and 18mΩ at VGS=10V, which makes it have lower losses under high current loads. The maximum drain current (ID) is -40A, which is suitable for power management, load switching and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -40A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
| Parameter | Value | Description|
|----------------|----------------------------|----------------------------------------|
| **Package** | TO251 | Small package for space-constrained power applications. |
| **Configuration** | Single P-channel | P-channel configuration is suitable for high-side switch applications and provides good switching performance. |
| **Drain-source voltage (VDS)** | -30V | Maximum drain-source withstand voltage, suitable for low-voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | -1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 22mΩ@VGS=4.5V | On-resistance at VGS=4.5V, providing lower conduction losses. |
| | 18mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | -40A | Maximum continuous current, suitable for high current load applications. |
| **Technology** | Trench Technology | Using Trench technology to provide lower on-resistance and high performance. |
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| Parameter | Value | Description|
|----------------|----------------------------|----------------------------------------|
| **Package** | TO251 | Small package for space-constrained power applications. |
| **Configuration** | Single P-channel | P-channel configuration is suitable for high-side switch applications and provides good switching performance. |
| **Drain-source voltage (VDS)** | -30V | Maximum drain-source withstand voltage, suitable for low-voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | -1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 22mΩ@VGS=4.5V | On-resistance at VGS=4.5V, providing lower conduction losses. |
| | 18mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | -40A | Maximum continuous current, suitable for high current load applications. |
| **Technology** | Trench Technology | Using Trench technology to provide lower on-resistance and high performance. |
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Domain and module applications：
Application fields and module examples
1. **Power management module**
STD1530PL-VB is widely used in power management systems, especially in high-side switch applications such as battery management systems (BMS), DC-DC converters, switching power supplies, etc. Its low on-resistance helps improve conversion efficiency and reduce power loss and heat generation.
2. **Automotive electronics**
In the field of automotive electronics, STD1530PL-VB can be used in vehicle power modules, power windows, LED lighting control and battery management systems. Its high drain current carrying capacity enables it to provide stable performance in the power transmission system of electric and hybrid vehicles.
3. **Motor drive applications**
This MOSFET is suitable for various motor drive applications, such as DC motor control in industrial automation, power tool drive, etc. Its low on-resistance and high current carrying capacity enable it to handle large load currents and ensure stable system operation.
4. **Load switch applications**
In consumer electronics and home appliances, the STD1530PL-VB can be used as a high-efficiency load switch in battery-powered devices, lighting systems, switching power supplies and other devices. Its high-efficiency switching performance can provide lower energy consumption and longer battery life during load start-stop.
The STD1530PL-VB is a P-channel power MOSFET with excellent performance, especially suitable for applications with high efficiency and high current load requirements, such as power management, motor drive and automotive electronics.
1. **Power management module**
STD1530PL-VB is widely used in power management systems, especially in high-side switch applications such as battery management systems (BMS), DC-DC converters, switching power supplies, etc. Its low on-resistance helps improve conversion efficiency and reduce power loss and heat generation.
2. **Automotive electronics**
In the field of automotive electronics, STD1530PL-VB can be used in vehicle power modules, power windows, LED lighting control and battery management systems. Its high drain current carrying capacity enables it to provide stable performance in the power transmission system of electric and hybrid vehicles.
3. **Motor drive applications**
This MOSFET is suitable for various motor drive applications, such as DC motor control in industrial automation, power tool drive, etc. Its low on-resistance and high current carrying capacity enable it to handle large load currents and ensure stable system operation.
4. **Load switch applications**
In consumer electronics and home appliances, the STD1530PL-VB can be used as a high-efficiency load switch in battery-powered devices, lighting systems, switching power supplies and other devices. Its high-efficiency switching performance can provide lower energy consumption and longer battery life during load start-stop.
The STD1530PL-VB is a P-channel power MOSFET with excellent performance, especially suitable for applications with high efficiency and high current load requirements, such as power management, motor drive and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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