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STD150N3LLH6-VB Product details
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STD150N3LLH6-VB Product Introduction
STD150N3LLH6-VB is a single-channel N-type power MOSFET in TO252 package, designed for high current and high efficiency applications. With a maximum drain-source voltage of 30V and a continuous drain current of 120A, the device is suitable for applications that require high current carrying and low conduction losses. Its on-resistance is 3mΩ (@VGS = 4.5V) and 2mΩ (@VGS = 10V), respectively, which enables it to perform well in high-efficiency power conversion, battery management and other fields. STD150N3LLH6-VB uses Trench technology to optimize switching performance and reduce switching losses, and performs well in high-frequency applications. This product is widely used in the field of power electronics, especially in scenarios of high-efficiency power management and high current drive.
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STD150N3LLH6-VB is a single-channel N-type power MOSFET in TO252 package, designed for high current and high efficiency applications. With a maximum drain-source voltage of 30V and a continuous drain current of 120A, the device is suitable for applications that require high current carrying and low conduction losses. Its on-resistance is 3mΩ (@VGS = 4.5V) and 2mΩ (@VGS = 10V), respectively, which enables it to perform well in high-efficiency power conversion, battery management and other fields. STD150N3LLH6-VB uses Trench technology to optimize switching performance and reduce switching losses, and performs well in high-frequency applications. This product is widely used in the field of power electronics, especially in scenarios of high-efficiency power management and high current drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD150N3LLH6-VB Parameter Description
| Parameter | Description|
|----------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain-Source Voltage (VDS)** | 30V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Turn-On Threshold Voltage (Vth)** | 1.7V |
| **On-Resistance (RDS(ON))** | 3mΩ (@VGS = 4.5V)
2mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 120A |
| **Technology** | Trench Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Switching Performance** | High frequency switching performance, suitable for fast switching applications|
| **Package Features** | Small TO252 package, suitable for circuit designs with limited space|
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| Parameter | Description|
|----------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain-Source Voltage (VDS)** | 30V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Turn-On Threshold Voltage (Vth)** | 1.7V |
| **On-Resistance (RDS(ON))** | 3mΩ (@VGS = 4.5V)
2mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 120A |
| **Technology** | Trench Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Switching Performance** | High frequency switching performance, suitable for fast switching applications|
| **Package Features** | Small TO252 package, suitable for circuit designs with limited space|
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Domain and module applications：
Applications and module examples
1. **Battery Management System (BMS)**
Due to its high current carrying capacity and low on-resistance, the STD150N3LLH6-VB is an ideal choice for battery management systems. Especially in electric vehicles, power tools and portable devices, this MOSFET can efficiently manage the charging and discharging process of large currents, optimizing the battery life and safety.
2. **High-efficiency power conversion**
In high-efficiency power converters, the STD150N3LLH6-VB can be used as a switching element in DC-DC converters and AC-DC power supplies to provide low-loss power conversion. Its low RDS(ON) and high drain current capability ensure that the power supply operates at high efficiency and high power density, reducing heat generation and improving overall system performance.
3. **Inverter applications**
The STD150N3LLH6-VB can be used in inverter circuits, especially in renewable energy systems such as solar photovoltaic power generation and wind power generation. In these applications, the MOSFET can efficiently convert DC to AC while ensuring system stability and efficiency.
4. **Electric drive system**
In electric drive systems, the STD150N3LLH6-VB is suitable for motor control and high current drive applications. Due to its low RDS(ON) and high current handling capability, it can provide efficient power conversion and drive, which is particularly important in areas such as electric vehicles, robots and power tools.
5. **Automotive electronic system**
In automotive electronic systems, the STD150N3LLH6-VB can be used in various power management modules, such as automotive battery management, charging systems and electric vehicle drive systems. The high current carrying capacity and low on-resistance of this MOSFET enable it to meet the stringent requirements of the automotive industry in terms of high performance and stability.
STD150N3LLH6-VB is a high current, high efficiency power MOSFET. With its excellent switching performance and low on-resistance, it plays an important role in multiple high efficiency power management and high current drive applications.
1. **Battery Management System (BMS)**
Due to its high current carrying capacity and low on-resistance, the STD150N3LLH6-VB is an ideal choice for battery management systems. Especially in electric vehicles, power tools and portable devices, this MOSFET can efficiently manage the charging and discharging process of large currents, optimizing the battery life and safety.
2. **High-efficiency power conversion**
In high-efficiency power converters, the STD150N3LLH6-VB can be used as a switching element in DC-DC converters and AC-DC power supplies to provide low-loss power conversion. Its low RDS(ON) and high drain current capability ensure that the power supply operates at high efficiency and high power density, reducing heat generation and improving overall system performance.
3. **Inverter applications**
The STD150N3LLH6-VB can be used in inverter circuits, especially in renewable energy systems such as solar photovoltaic power generation and wind power generation. In these applications, the MOSFET can efficiently convert DC to AC while ensuring system stability and efficiency.
4. **Electric drive system**
In electric drive systems, the STD150N3LLH6-VB is suitable for motor control and high current drive applications. Due to its low RDS(ON) and high current handling capability, it can provide efficient power conversion and drive, which is particularly important in areas such as electric vehicles, robots and power tools.
5. **Automotive electronic system**
In automotive electronic systems, the STD150N3LLH6-VB can be used in various power management modules, such as automotive battery management, charging systems and electric vehicle drive systems. The high current carrying capacity and low on-resistance of this MOSFET enable it to meet the stringent requirements of the automotive industry in terms of high performance and stability.
STD150N3LLH6-VB is a high current, high efficiency power MOSFET. With its excellent switching performance and low on-resistance, it plays an important role in multiple high efficiency power management and high current drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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