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STD13NM60N-VB Product details
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Product Introduction
STD13NM60N-VB is a high-performance N-channel MOSFET in TO-252 package, designed for high voltage applications. It has a drain-source voltage of 650V, a gate-source voltage of 30V and a maximum drain current capability of 11A. This MOSFET adopts SJ_Multi-EPI technology, which can optimize conduction efficiency, reduce switching losses, and thus improve power conversion efficiency. The low on-resistance and high voltage resistance of STD13NM60N-VB make it particularly suitable for applications that require high voltage tolerance and high-efficiency conversion. It is widely used in power management, industrial control, automotive electronics and other fields.
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STD13NM60N-VB is a high-performance N-channel MOSFET in TO-252 package, designed for high voltage applications. It has a drain-source voltage of 650V, a gate-source voltage of 30V and a maximum drain current capability of 11A. This MOSFET adopts SJ_Multi-EPI technology, which can optimize conduction efficiency, reduce switching losses, and thus improve power conversion efficiency. The low on-resistance and high voltage resistance of STD13NM60N-VB make it particularly suitable for applications that require high voltage tolerance and high-efficiency conversion. It is widely used in power management, industrial control, automotive electronics and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------|---------------------------------------------|
| **Package** | TO-252 | Surface mount package for high power density design|
| **Polarity and configuration** | Unipolar N-channel | High efficiency switch design for high voltage applications|
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage for high voltage systems|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate-source voltage for safe operation|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-resistance (RDS(ON))** | 370mΩ @ VGS = 10V | On-resistance at standard gate drive voltage|
| **Drain current (ID)** | 11A | Maximum continuous drain current capability |
| **Technology** | SJ_Multi-EPI | Technology to improve conduction efficiency and reduce switching losses |
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| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------|---------------------------------------------|
| **Package** | TO-252 | Surface mount package for high power density design|
| **Polarity and configuration** | Unipolar N-channel | High efficiency switch design for high voltage applications|
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage for high voltage systems|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate-source voltage for safe operation|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-resistance (RDS(ON))** | 370mΩ @ VGS = 10V | On-resistance at standard gate drive voltage|
| **Drain current (ID)** | 11A | Maximum continuous drain current capability |
| **Technology** | SJ_Multi-EPI | Technology to improve conduction efficiency and reduce switching losses |
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Domain and module applications：
Application fields and module examples
1. **Power management**
STD13NM60N-VB is widely used in switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits, and is particularly suitable for power conversion in high voltage environments. Its high withstand voltage characteristics and low on-resistance enable it to efficiently convert electrical energy to the required voltage and current.
2. **Industrial automation and control**
In industrial automation systems, STD13NM60N-VB can be used for high voltage motor drives, relay switches, and other automation control modules to ensure stable operation of the equipment, and can withstand long-term operation in high voltage environments to ensure high efficiency.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In EVs and HEVs, the STD13NM60N-VB can be used in battery management systems, power conversion modules, and battery chargers to support efficient power conversion and optimized power management systems, ensuring high efficiency and long-term stable operation of automotive systems.
4. **Solar Inverters**
This MOSFET performs well in solar inverter systems, effectively handling power conversion from DC to AC, ensuring efficient energy conversion in solar power generation systems, and adapting to high-voltage and high-current working conditions.
5. **Home Appliances and Consumer Electronics**
The STD13NM60N-VB can be used in power management modules in home appliances, such as TVs, refrigerators, air conditioners, and other devices. It can provide efficient power conversion in high-voltage working environments, maintain low on-resistance and switching losses, thereby improving the performance and efficiency of the equipment.
STD13NM60N-VB is widely used in power management, industrial control, electric vehicles and solar energy due to its high voltage tolerance, low on-resistance and SJ_Multi-EPI technology, providing reliable and high-efficiency energy conversion solutions for these systems.
1. **Power management**
STD13NM60N-VB is widely used in switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits, and is particularly suitable for power conversion in high voltage environments. Its high withstand voltage characteristics and low on-resistance enable it to efficiently convert electrical energy to the required voltage and current.
2. **Industrial automation and control**
In industrial automation systems, STD13NM60N-VB can be used for high voltage motor drives, relay switches, and other automation control modules to ensure stable operation of the equipment, and can withstand long-term operation in high voltage environments to ensure high efficiency.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In EVs and HEVs, the STD13NM60N-VB can be used in battery management systems, power conversion modules, and battery chargers to support efficient power conversion and optimized power management systems, ensuring high efficiency and long-term stable operation of automotive systems.
4. **Solar Inverters**
This MOSFET performs well in solar inverter systems, effectively handling power conversion from DC to AC, ensuring efficient energy conversion in solar power generation systems, and adapting to high-voltage and high-current working conditions.
5. **Home Appliances and Consumer Electronics**
The STD13NM60N-VB can be used in power management modules in home appliances, such as TVs, refrigerators, air conditioners, and other devices. It can provide efficient power conversion in high-voltage working environments, maintain low on-resistance and switching losses, thereby improving the performance and efficiency of the equipment.
STD13NM60N-VB is widely used in power management, industrial control, electric vehicles and solar energy due to its high voltage tolerance, low on-resistance and SJ_Multi-EPI technology, providing reliable and high-efficiency energy conversion solutions for these systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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