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STD13N60M2-VB Product details
Back to previous pageProduct introduction：
1. STD13N60M2-VB Product Introduction
STD13N60M2-VB is a high-performance single-channel N-type power MOSFET in TO252 (DPAK) package, designed for high voltage applications. The device has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of up to ±30V, making it suitable for a variety of high-voltage power management and conversion applications. STD13N60M2-VB uses SJ_Multi-EPI technology to provide low on-resistance while maintaining high switching frequency and low switching loss. Its on-resistance is 370mΩ (VGS=10V) and its maximum drain current (ID) is 11A, which can support high voltage and high power application requirements. This MOSFET is suitable for power conversion, motor control, LED drive and other fields, and provides high reliability and efficiency.
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STD13N60M2-VB is a high-performance single-channel N-type power MOSFET in TO252 (DPAK) package, designed for high voltage applications. The device has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of up to ±30V, making it suitable for a variety of high-voltage power management and conversion applications. STD13N60M2-VB uses SJ_Multi-EPI technology to provide low on-resistance while maintaining high switching frequency and low switching loss. Its on-resistance is 370mΩ (VGS=10V) and its maximum drain current (ID) is 11A, which can support high voltage and high power application requirements. This MOSFET is suitable for power conversion, motor control, LED drive and other fields, and provides high reliability and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|--------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single-channel MOSFET design, simplified circuit structure. |
| **Drain-source voltage (VDS)** | 650V | Suitable for high voltage applications such as industrial power supplies. |
| **Gate-source voltage (VGS)** | ±30V | Provides a wide gate drive voltage range to support high voltage operation. |
| **Gate threshold voltage (Vth)** | 3.5V | Ensures stable switching operation to meet different application requirements. |
| **On-resistance (RDS(ON))** | 370mΩ @ VGS=10V | Low conduction loss, improved system efficiency. |
| **Maximum drain current (ID)** | 11A | Supports medium and high power applications, suitable for high current power management. |
| **Technology type** | SJ_Multi-EPI | SJ_Multi-EPI technology, optimizes switching performance and efficiency. |
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|--------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single-channel MOSFET design, simplified circuit structure. |
| **Drain-source voltage (VDS)** | 650V | Suitable for high voltage applications such as industrial power supplies. |
| **Gate-source voltage (VGS)** | ±30V | Provides a wide gate drive voltage range to support high voltage operation. |
| **Gate threshold voltage (Vth)** | 3.5V | Ensures stable switching operation to meet different application requirements. |
| **On-resistance (RDS(ON))** | 370mΩ @ VGS=10V | Low conduction loss, improved system efficiency. |
| **Maximum drain current (ID)** | 11A | Supports medium and high power applications, suitable for high current power management. |
| **Technology type** | SJ_Multi-EPI | SJ_Multi-EPI technology, optimizes switching performance and efficiency. |
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Domain and module applications：
III. Application fields and module application examples
1. **High voltage power management**
- **AC-DC power converter**: In AC-DC power conversion systems, STD13N60M2-VB can be used as an efficient switching element, providing high drain-source voltage tolerance (up to 650V), while reducing conduction losses and optimizing conversion efficiency. It is suitable for home appliance power supplies, server power supplies, etc.
- **Switching power supply**: The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice in switching power supply design, helping to improve overall power efficiency and reduce heat generation, especially for applications that require high voltage tolerance.
2. **Motor drive**
- **Variable frequency drive**: In variable frequency drive systems, STD13N60M2-VB can efficiently switch current, ensure smooth operation of the motor, reduce current loss and oscillation, and is suitable for speed regulation and control of high-power motors.
- **Power tool drive circuit**: The high current carrying capacity of this MOSFET makes it very suitable for application in power tool drive circuits, capable of withstanding high loads and maintaining stable working efficiency.
3. **LED driver**
- **LED lighting controller**: In LED driver power, the low on-resistance characteristics of STD13N60M2-VB help improve system efficiency, reduce power loss, and can efficiently drive a large number of LED lighting systems, suitable for commercial lighting, architectural lighting and vehicle lighting systems.
- **Backlight driver**: For the backlight driver circuit of LCD TVs and monitors, STD13N60M2-VB can provide stable current output, help improve display effects and reduce power consumption.
4. **Industrial control and high-voltage applications**
- **High-voltage power supply system**: STD13N60M2-VB performs well in high-voltage power supply modules, especially in industrial applications that require high drain voltage, which can ensure the stable operation of the equipment and is widely used in industrial automation, gas compressors and high-voltage power supplies.
- **Solar Inverter**: As a switching element in solar inverters, the STD13N60M2-VB helps solar systems achieve higher energy output and longer service life through efficient power conversion.
The STD13N60M2-VB is suitable for high-voltage power management, industrial drives, LED lighting, and other high-power applications. With its excellent current carrying capacity and conduction loss characteristics, it is widely used in various occasions requiring high voltage and efficient power conversion, helping to optimize the performance and stability of the overall system.
1. **High voltage power management**
- **AC-DC power converter**: In AC-DC power conversion systems, STD13N60M2-VB can be used as an efficient switching element, providing high drain-source voltage tolerance (up to 650V), while reducing conduction losses and optimizing conversion efficiency. It is suitable for home appliance power supplies, server power supplies, etc.
- **Switching power supply**: The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice in switching power supply design, helping to improve overall power efficiency and reduce heat generation, especially for applications that require high voltage tolerance.
2. **Motor drive**
- **Variable frequency drive**: In variable frequency drive systems, STD13N60M2-VB can efficiently switch current, ensure smooth operation of the motor, reduce current loss and oscillation, and is suitable for speed regulation and control of high-power motors.
- **Power tool drive circuit**: The high current carrying capacity of this MOSFET makes it very suitable for application in power tool drive circuits, capable of withstanding high loads and maintaining stable working efficiency.
3. **LED driver**
- **LED lighting controller**: In LED driver power, the low on-resistance characteristics of STD13N60M2-VB help improve system efficiency, reduce power loss, and can efficiently drive a large number of LED lighting systems, suitable for commercial lighting, architectural lighting and vehicle lighting systems.
- **Backlight driver**: For the backlight driver circuit of LCD TVs and monitors, STD13N60M2-VB can provide stable current output, help improve display effects and reduce power consumption.
4. **Industrial control and high-voltage applications**
- **High-voltage power supply system**: STD13N60M2-VB performs well in high-voltage power supply modules, especially in industrial applications that require high drain voltage, which can ensure the stable operation of the equipment and is widely used in industrial automation, gas compressors and high-voltage power supplies.
- **Solar Inverter**: As a switching element in solar inverters, the STD13N60M2-VB helps solar systems achieve higher energy output and longer service life through efficient power conversion.
The STD13N60M2-VB is suitable for high-voltage power management, industrial drives, LED lighting, and other high-power applications. With its excellent current carrying capacity and conduction loss characteristics, it is widely used in various occasions requiring high voltage and efficient power conversion, helping to optimize the performance and stability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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