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STD12NF06-VB Product details
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Product Introduction: STD12NF06-VB
STD12NF06-VB is a single N-channel power MOSFET in TO252 package. It adopts Trench technology and has good conductivity and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium voltage power applications. Its gate voltage (VGS) range is ±20V, with a threshold voltage (Vth) of 1.7V, which can achieve stable turn-on at a lower gate voltage. Its on-resistance is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, which makes it have lower loss in high current applications. The maximum drain current (ID) is 18A, which is suitable for automotive electronics, power management and industrial control.
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STD12NF06-VB is a single N-channel power MOSFET in TO252 package. It adopts Trench technology and has good conductivity and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium voltage power applications. Its gate voltage (VGS) range is ±20V, with a threshold voltage (Vth) of 1.7V, which can achieve stable turn-on at a lower gate voltage. Its on-resistance is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, which makes it have lower loss in high current applications. The maximum drain current (ID) is 18A, which is suitable for automotive electronics, power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|----------------------------|---------------------------------------|
| **Package** | TO252 | Small package for compact power applications. |
| **Configuration** | Single N-channel | Standard single N-channel configuration, providing good switching performance. |
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source withstand voltage, suitable for medium voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 85mΩ@VGS=4.5V | On-resistance at VGS=4.5V, providing low conduction losses. |
| | 73mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | 18A | Maximum continuous current, suitable for high current applications. |
| **Technology** | Trench Technology | Using Trench technology, providing lower on-resistance and good performance. |
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| Parameter | Value | Description|
|----------------|----------------------------|---------------------------------------|
| **Package** | TO252 | Small package for compact power applications. |
| **Configuration** | Single N-channel | Standard single N-channel configuration, providing good switching performance. |
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source withstand voltage, suitable for medium voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 85mΩ@VGS=4.5V | On-resistance at VGS=4.5V, providing low conduction losses. |
| | 73mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | 18A | Maximum continuous current, suitable for high current applications. |
| **Technology** | Trench Technology | Using Trench technology, providing lower on-resistance and good performance. |
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Domain and module applications：
Application fields and module examples
1. **Automotive electronics**
STD12NF06-VB is widely used in automotive power management systems, such as on-board power converters, power window controllers, battery management systems (BMS), etc. Its low on-resistance and high current carrying capacity make it excellent in the power transmission system of electric vehicles and hybrid vehicles.
2. **Power management module**
In power management modules for consumer electronics, communication equipment and industrial control systems, STD12NF06-VB can be used for DC-DC converters, switching power supplies and load switch applications. Its low on-resistance can effectively improve conversion efficiency and reduce heat generation.
3. **Motor drive applications**
This MOSFET is suitable for medium-power motor drive systems, such as DC motor control in industrial automation equipment, power tool drive systems, etc. Its high current carrying capacity enables stable operation under high load conditions.
4. **Industrial Control Systems**
In industrial control systems, such as robot drives and automation equipment control modules, the STD12NF06-VB provides efficient switch control to ensure system stability and efficiency. Its low on-resistance helps reduce energy loss and improve overall system performance.
As an efficient, low-loss power switch device, the STD12NF06-VB is suitable for multiple fields such as automotive, communications, power management and industrial control, and is an ideal choice for high current and medium voltage applications.
1. **Automotive electronics**
STD12NF06-VB is widely used in automotive power management systems, such as on-board power converters, power window controllers, battery management systems (BMS), etc. Its low on-resistance and high current carrying capacity make it excellent in the power transmission system of electric vehicles and hybrid vehicles.
2. **Power management module**
In power management modules for consumer electronics, communication equipment and industrial control systems, STD12NF06-VB can be used for DC-DC converters, switching power supplies and load switch applications. Its low on-resistance can effectively improve conversion efficiency and reduce heat generation.
3. **Motor drive applications**
This MOSFET is suitable for medium-power motor drive systems, such as DC motor control in industrial automation equipment, power tool drive systems, etc. Its high current carrying capacity enables stable operation under high load conditions.
4. **Industrial Control Systems**
In industrial control systems, such as robot drives and automation equipment control modules, the STD12NF06-VB provides efficient switch control to ensure system stability and efficiency. Its low on-resistance helps reduce energy loss and improve overall system performance.
As an efficient, low-loss power switch device, the STD12NF06-VB is suitable for multiple fields such as automotive, communications, power management and industrial control, and is an ideal choice for high current and medium voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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