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STD12NE06-VB Product details
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STD12NE06-VB Product Introduction
STD12NE06-VB is a single-channel N-type power MOSFET in TO252 package, designed for low-voltage applications, with efficient switching performance and low on-resistance. The device has a maximum drain-source voltage of 60V, a maximum gate-source voltage of ±20V, and a continuous drain current capability of 18A. Its on-resistance is 85mΩ (@VGS = 4.5V) and 73mΩ (@VGS = 10V), respectively, providing an ideal solution for low-power, high-efficiency designs. STD12NE06-VB uses the latest Trench technology, which improves the efficiency and reliability of power switches by optimizing the chip structure, and is widely used in power management, DC-DC conversion and other fields.
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STD12NE06-VB is a single-channel N-type power MOSFET in TO252 package, designed for low-voltage applications, with efficient switching performance and low on-resistance. The device has a maximum drain-source voltage of 60V, a maximum gate-source voltage of ±20V, and a continuous drain current capability of 18A. Its on-resistance is 85mΩ (@VGS = 4.5V) and 73mΩ (@VGS = 10V), respectively, providing an ideal solution for low-power, high-efficiency designs. STD12NE06-VB uses the latest Trench technology, which improves the efficiency and reliability of power switches by optimizing the chip structure, and is widely used in power management, DC-DC conversion and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD12NE06-VB parameter description
| Parameter | Description |
|----------------------|-------------------------------------------------|
| **Package type** | TO252 |
| **Configuration** | Single channel N-type MOSFET |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 85mΩ (@VGS = 4.5V)
73mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 18A |
| **Technology** | Trench technology |
| **Operating junction temperature range** | -55°C to +150°C |
| **Switching performance** | Fast switching, suitable for high frequency applications |
| **Package Features** | TO252 package is small, suitable for space-constrained electronic circuit design |
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| Parameter | Description |
|----------------------|-------------------------------------------------|
| **Package type** | TO252 |
| **Configuration** | Single channel N-type MOSFET |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 85mΩ (@VGS = 4.5V)
73mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 18A |
| **Technology** | Trench technology |
| **Operating junction temperature range** | -55°C to +150°C |
| **Switching performance** | Fast switching, suitable for high frequency applications |
| **Package Features** | TO252 package is small, suitable for space-constrained electronic circuit design |
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Domain and module applications：
Applications and module examples
1. **DC-DC converter**
With its low on-resistance and high current carrying capacity, STD12NE06-VB is ideal for use as a switching device in DC-DC converters. Especially in applications with large load currents, such as battery management systems, renewable energy systems, etc., it can efficiently convert electrical energy and reduce system losses.
2. **Power management system**
In power management modules (PMUs), STD12NE06-VB can be used for efficient power conversion, such as voltage regulators, DC power modules, etc. These applications can take full advantage of its low RDS(ON) and high operating current to improve system energy efficiency and stability.
3. **LED driver**
Due to the low on-resistance and fast switching performance of this MOSFET, it is widely used in LED lighting driver power supplies. In these applications, STD12NE06-VB ensures that the driver power supply achieves the best balance between high efficiency and stability.
4. **Automotive electronics**
In the automotive electronics field, STD12NE06-VB can be used in modules such as power window control and on-board power converters, especially in low-voltage, high-efficiency power management systems, taking advantage of its high-frequency switching and low loss.
5. **Consumer electronics**
This MOSFET is also suitable for power management systems of consumer electronics devices, such as portable devices and smart home appliances, providing efficient power conversion and energy management, extending battery life and improving device performance.
STD12NE06-VB is a high-efficiency, low-power power MOSFET suitable for various low-voltage power conversion and management modules, and can provide excellent performance in a variety of power electronics applications.
1. **DC-DC converter**
With its low on-resistance and high current carrying capacity, STD12NE06-VB is ideal for use as a switching device in DC-DC converters. Especially in applications with large load currents, such as battery management systems, renewable energy systems, etc., it can efficiently convert electrical energy and reduce system losses.
2. **Power management system**
In power management modules (PMUs), STD12NE06-VB can be used for efficient power conversion, such as voltage regulators, DC power modules, etc. These applications can take full advantage of its low RDS(ON) and high operating current to improve system energy efficiency and stability.
3. **LED driver**
Due to the low on-resistance and fast switching performance of this MOSFET, it is widely used in LED lighting driver power supplies. In these applications, STD12NE06-VB ensures that the driver power supply achieves the best balance between high efficiency and stability.
4. **Automotive electronics**
In the automotive electronics field, STD12NE06-VB can be used in modules such as power window control and on-board power converters, especially in low-voltage, high-efficiency power management systems, taking advantage of its high-frequency switching and low loss.
5. **Consumer electronics**
This MOSFET is also suitable for power management systems of consumer electronics devices, such as portable devices and smart home appliances, providing efficient power conversion and energy management, extending battery life and improving device performance.
STD12NE06-VB is a high-efficiency, low-power power MOSFET suitable for various low-voltage power conversion and management modules, and can provide excellent performance in a variety of power electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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