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STD12N65M5-VB Product details
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Product Introduction
STD12N65M5-VB is a high-performance N-channel MOSFET in TO-252 package, designed for high voltage applications. It has a drain-source voltage of 700V, a gate-source voltage tolerance of 30V and a drain current capability of 11A, suitable for applications requiring high voltage tolerance and low on-resistance. This MOSFET adopts SJ_Multi-EPI technology, which optimizes the switching characteristics and conduction performance, reduces switching losses, and provides stable high current performance. It is widely used in power management, industrial control and high-power electrical equipment.
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STD12N65M5-VB is a high-performance N-channel MOSFET in TO-252 package, designed for high voltage applications. It has a drain-source voltage of 700V, a gate-source voltage tolerance of 30V and a drain current capability of 11A, suitable for applications requiring high voltage tolerance and low on-resistance. This MOSFET adopts SJ_Multi-EPI technology, which optimizes the switching characteristics and conduction performance, reduces switching losses, and provides stable high current performance. It is widely used in power management, industrial control and high-power electrical equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------|-----------------------------------------------|
| **Package** | TO-252 | Surface mount package for high power density design|
| **Polarity and Configuration** | Unipolar N-channel | High efficiency switch design for high voltage applications|
| **Drain-Source Voltage (VDS)** | 700V | Maximum drain-source voltage for high voltage systems|
| **Gate-Source Voltage (VGS)** | ±30V | Maximum gate-source voltage for safe operation|
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-Resistance (RDS(ON))** | 390mΩ @ VGS = 10V | On-Resistance at standard gate drive voltage|
| **Drain Current (ID)** | 11A | Maximum continuous drain current capability|
| **Technology** | SJ_Multi-EPI | Technology to improve conduction efficiency and reduce switching losses|
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| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------|-----------------------------------------------|
| **Package** | TO-252 | Surface mount package for high power density design|
| **Polarity and Configuration** | Unipolar N-channel | High efficiency switch design for high voltage applications|
| **Drain-Source Voltage (VDS)** | 700V | Maximum drain-source voltage for high voltage systems|
| **Gate-Source Voltage (VGS)** | ±30V | Maximum gate-source voltage for safe operation|
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-Resistance (RDS(ON))** | 390mΩ @ VGS = 10V | On-Resistance at standard gate drive voltage|
| **Drain Current (ID)** | 11A | Maximum continuous drain current capability|
| **Technology** | SJ_Multi-EPI | Technology to improve conduction efficiency and reduce switching losses|
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Domain and module applications：
Application fields and module examples
1. **High-voltage power management**
STD12N65M5-VB has important applications in high-voltage switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits. Its high withstand voltage characteristics enable it to effectively handle the conversion of high-voltage power supplies, reduce energy losses, and improve system efficiency.
2. **Industrial automation and control**
In industrial automation systems, STD12N65M5-VB can be used in motor drives, relay switches, and automation control modules to ensure efficient and stable power management and withstand continuous operation in high-voltage environments.
3. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**
In the battery management system, battery charger, and power conversion module of electric and hybrid vehicles, this MOSFET can provide efficient power conversion due to its high withstand voltage and high conductivity, ensuring the stability and long-term operation of the automotive system.
4. **Consumer Electronics and Home Appliances**
The STD12N65M5-VB is suitable for power modules in consumer electronics and home appliances such as TVs, air conditioners, and refrigerators. It can operate in high-voltage environments and maintain a low on-resistance, thereby improving energy efficiency and equipment reliability.
5. **Solar Inverter**
In solar inverter applications, the STD12N65M5-VB can be used for high-voltage DC-AC conversion, improving the conversion efficiency of solar power and ensuring system reliability and durability.
Through its high voltage tolerance, low on-resistance and advanced SJ_Multi-EPI technology, this MOSFET can provide solutions for high power density and high efficiency applications, especially suitable for power management, industrial control and electric vehicles.
1. **High-voltage power management**
STD12N65M5-VB has important applications in high-voltage switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits. Its high withstand voltage characteristics enable it to effectively handle the conversion of high-voltage power supplies, reduce energy losses, and improve system efficiency.
2. **Industrial automation and control**
In industrial automation systems, STD12N65M5-VB can be used in motor drives, relay switches, and automation control modules to ensure efficient and stable power management and withstand continuous operation in high-voltage environments.
3. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**
In the battery management system, battery charger, and power conversion module of electric and hybrid vehicles, this MOSFET can provide efficient power conversion due to its high withstand voltage and high conductivity, ensuring the stability and long-term operation of the automotive system.
4. **Consumer Electronics and Home Appliances**
The STD12N65M5-VB is suitable for power modules in consumer electronics and home appliances such as TVs, air conditioners, and refrigerators. It can operate in high-voltage environments and maintain a low on-resistance, thereby improving energy efficiency and equipment reliability.
5. **Solar Inverter**
In solar inverter applications, the STD12N65M5-VB can be used for high-voltage DC-AC conversion, improving the conversion efficiency of solar power and ensuring system reliability and durability.
Through its high voltage tolerance, low on-resistance and advanced SJ_Multi-EPI technology, this MOSFET can provide solutions for high power density and high efficiency applications, especially suitable for power management, industrial control and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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