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STD12N06T4-VB Product details
Back to previous pageProduct introduction：
1. STD12N06T4-VB Product Introduction
STD12N06T4-VB is a high-performance single-channel N-type power MOSFET in TO252 (DPAK) package, designed for low to medium voltage applications. This device uses Trench technology to provide excellent conductivity at lower voltages, with low on-resistance and good current carrying capacity. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the gate-source voltage (VGS) can withstand ±20V, which is suitable for various applications such as high-efficiency power conversion, motor control, and battery management systems. The on-resistance of STD12N06T4-VB is 85mΩ (VGS=4.5V) and 73mΩ (VGS=10V), and the maximum drain current is 18A, which can maintain low power loss under high current loads, ensuring high efficiency and reliability of the system.
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STD12N06T4-VB is a high-performance single-channel N-type power MOSFET in TO252 (DPAK) package, designed for low to medium voltage applications. This device uses Trench technology to provide excellent conductivity at lower voltages, with low on-resistance and good current carrying capacity. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the gate-source voltage (VGS) can withstand ±20V, which is suitable for various applications such as high-efficiency power conversion, motor control, and battery management systems. The on-resistance of STD12N06T4-VB is 85mΩ (VGS=4.5V) and 73mΩ (VGS=10V), and the maximum drain current is 18A, which can maintain low power loss under high current loads, ensuring high efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|--------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single-channel MOSFET design, simplified circuit structure. |
| **Drain-source voltage (VDS)** | 60V | Suitable for low to medium voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Provides a wide range of gate drive voltages. |
| **Gate threshold voltage (Vth)** | 1.7V | Ensures stable switching operation and adapts to different working environments. |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | Low conduction loss, providing higher efficiency. |
| | 73mΩ @ VGS=10V | Lower conduction loss, suitable for higher drive voltage. |
| **Maximum drain current (ID)** | 18A | Supports high current applications, suitable for high power output. |
| **Technology type** | Trench | Trench technology, optimizes switching performance and efficiency. |
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|--------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single-channel MOSFET design, simplified circuit structure. |
| **Drain-source voltage (VDS)** | 60V | Suitable for low to medium voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Provides a wide range of gate drive voltages. |
| **Gate threshold voltage (Vth)** | 1.7V | Ensures stable switching operation and adapts to different working environments. |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | Low conduction loss, providing higher efficiency. |
| | 73mΩ @ VGS=10V | Lower conduction loss, suitable for higher drive voltage. |
| **Maximum drain current (ID)** | 18A | Supports high current applications, suitable for high power output. |
| **Technology type** | Trench | Trench technology, optimizes switching performance and efficiency. |
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Domain and module applications：
III. Application fields and module application examples
1. **Power management and conversion**
- **DC-DC converter**: In the power conversion module, the low on-resistance and high current carrying capacity of STD12N06T4-VB make it an ideal choice for high-efficiency DC-DC converters, which can effectively improve power conversion efficiency and reduce energy loss.
- **Battery charger**: The low conduction loss of this MOSFET makes it very suitable for battery charger design, especially in applications that require fast charging, such as chargers for portable devices or power tools.
2. **Automotive electronics**
- **In-vehicle power system**: In the power management system of electric vehicles or hybrid vehicles, STD12N06T4-VB provides high-efficiency switching functions to help optimize the charging and discharging efficiency of the vehicle battery and extend the battery life.
- **Automotive LED lighting system**: Used in automotive LED lighting modules, it can provide stable current, reduce system power consumption and improve lighting efficiency.
3. **Consumer Electronics**
- **Portable Device Power Management**: In portable devices such as mobile phones, tablets and laptops, the STD12N06T4-VB can be used in power management circuits to improve system efficiency and extend battery life.
- **Power Amplifier**: Used in audio power amplifiers, this MOSFET provides low on-resistance, reduces power loss, and improves the overall performance of audio equipment.
4. **Industrial Control and Drive**
- **Motor Drive Controller**: The STD12N06T4-VB can be used in various motor control circuits, providing efficient switching performance, helping to optimize the starting and running process of the motor, reducing heat generation and improving efficiency.
- **Solar Inverter**: In solar inverters, using the STD12N06T4-VB as a switching element can effectively improve energy conversion efficiency and ensure system stability and reliability.
The low on-resistance and high current carrying capability of the STD12N06T4-VB make it widely used in high-efficiency power conversion, battery charging, electric vehicles, consumer electronics and industrial control, helping to improve system efficiency and reduce energy loss.
1. **Power management and conversion**
- **DC-DC converter**: In the power conversion module, the low on-resistance and high current carrying capacity of STD12N06T4-VB make it an ideal choice for high-efficiency DC-DC converters, which can effectively improve power conversion efficiency and reduce energy loss.
- **Battery charger**: The low conduction loss of this MOSFET makes it very suitable for battery charger design, especially in applications that require fast charging, such as chargers for portable devices or power tools.
2. **Automotive electronics**
- **In-vehicle power system**: In the power management system of electric vehicles or hybrid vehicles, STD12N06T4-VB provides high-efficiency switching functions to help optimize the charging and discharging efficiency of the vehicle battery and extend the battery life.
- **Automotive LED lighting system**: Used in automotive LED lighting modules, it can provide stable current, reduce system power consumption and improve lighting efficiency.
3. **Consumer Electronics**
- **Portable Device Power Management**: In portable devices such as mobile phones, tablets and laptops, the STD12N06T4-VB can be used in power management circuits to improve system efficiency and extend battery life.
- **Power Amplifier**: Used in audio power amplifiers, this MOSFET provides low on-resistance, reduces power loss, and improves the overall performance of audio equipment.
4. **Industrial Control and Drive**
- **Motor Drive Controller**: The STD12N06T4-VB can be used in various motor control circuits, providing efficient switching performance, helping to optimize the starting and running process of the motor, reducing heat generation and improving efficiency.
- **Solar Inverter**: In solar inverters, using the STD12N06T4-VB as a switching element can effectively improve energy conversion efficiency and ensure system stability and reliability.
The low on-resistance and high current carrying capability of the STD12N06T4-VB make it widely used in high-efficiency power conversion, battery charging, electric vehicles, consumer electronics and industrial control, helping to improve system efficiency and reduce energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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