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STD120N4LF6-VB Product details
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Product Introduction: STD120N4LF6-VB
STD120N4LF6-VB is a single N-channel power MOSFET in TO252 package. It adopts advanced Trench technology and has extremely low on-resistance and high withstand voltage characteristics. Its maximum drain-source voltage (VDS) is 40V, which is suitable for low-voltage power applications. The gate voltage (VGS) range of this device is ±20V, and it has a threshold voltage (Vth) of 2.5V, which enables it to operate stably at a lower gate voltage. Its on-resistance is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V, which can effectively reduce conduction losses. The maximum drain current (ID) is 85A, which is suitable for high-current applications, especially in automotive electronics, communication power supplies and industrial control.
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STD120N4LF6-VB is a single N-channel power MOSFET in TO252 package. It adopts advanced Trench technology and has extremely low on-resistance and high withstand voltage characteristics. Its maximum drain-source voltage (VDS) is 40V, which is suitable for low-voltage power applications. The gate voltage (VGS) range of this device is ±20V, and it has a threshold voltage (Vth) of 2.5V, which enables it to operate stably at a lower gate voltage. Its on-resistance is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V, which can effectively reduce conduction losses. The maximum drain current (ID) is 85A, which is suitable for high-current applications, especially in automotive electronics, communication power supplies and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|----------------------------|-----------------------------------------|
| **Package** | TO252 | Small package for power-intensive applications. |
| **Configuration** | Single N-channel | Standard single N-channel configuration, providing good switching performance. |
| **Drain-source voltage (VDS)** | 40V | Maximum drain-source withstand voltage, suitable for low-voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 2.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 6mΩ@VGS=4.5V | On-resistance at VGS=4.5V, with low conduction losses. |
| | 5mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | 85A | Maximum continuous current, suitable for high current applications. |
| **Technology** | Trench Technology | Using Trench technology, providing lower on-resistance and good performance. |
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| Parameter | Value | Description|
|----------------|----------------------------|-----------------------------------------|
| **Package** | TO252 | Small package for power-intensive applications. |
| **Configuration** | Single N-channel | Standard single N-channel configuration, providing good switching performance. |
| **Drain-source voltage (VDS)** | 40V | Maximum drain-source withstand voltage, suitable for low-voltage power applications. |
| **Gate voltage (VGS)** | ±20V | Gate drive voltage range to ensure safe device operation. |
| **Threshold voltage (Vth)** | 2.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 6mΩ@VGS=4.5V | On-resistance at VGS=4.5V, with low conduction losses. |
| | 5mΩ@VGS=10V | On-resistance at VGS=10V, further reducing conduction loss. |
| **Drain Current (ID)** | 85A | Maximum continuous current, suitable for high current applications. |
| **Technology** | Trench Technology | Using Trench technology, providing lower on-resistance and good performance. |
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Domain and module applications：
Application fields and module examples
1. **Automotive electronics**
STD120N4LF6-VB can be used in automotive power management modules, power windows, on-board chargers and LED lighting systems. Its low on-resistance and high current carrying capacity make it particularly suitable for on-board power conversion and motor drive circuits.
2. **Communication power module**
In the power management of communication equipment, such as base station power supply, telecommunication switches, etc., STD120N4LF6-VB provides an efficient power conversion solution. Its low on-resistance can effectively reduce energy loss and improve the overall efficiency of the system.
3. **Industrial control system**
In industrial automation and equipment control systems, STD120N4LF6-VB is widely used in motor drives, power modules, adjustable power supplies and inverters. Its high current carrying capacity and low conduction loss enable it to operate stably in harsh environments.
4. **Power tools and household appliances**
In high-power power tools, household appliances and other equipment, this MOSFET is used to drive motors or control high-power loads to provide efficient and stable power conversion.
STD120N4LF6-VB is suitable for a variety of low-voltage and high-current applications. With its high performance and low loss characteristics, it is an ideal choice for high-efficiency power switches and can provide excellent performance in various power management and power conversion systems.
1. **Automotive electronics**
STD120N4LF6-VB can be used in automotive power management modules, power windows, on-board chargers and LED lighting systems. Its low on-resistance and high current carrying capacity make it particularly suitable for on-board power conversion and motor drive circuits.
2. **Communication power module**
In the power management of communication equipment, such as base station power supply, telecommunication switches, etc., STD120N4LF6-VB provides an efficient power conversion solution. Its low on-resistance can effectively reduce energy loss and improve the overall efficiency of the system.
3. **Industrial control system**
In industrial automation and equipment control systems, STD120N4LF6-VB is widely used in motor drives, power modules, adjustable power supplies and inverters. Its high current carrying capacity and low conduction loss enable it to operate stably in harsh environments.
4. **Power tools and household appliances**
In high-power power tools, household appliances and other equipment, this MOSFET is used to drive motors or control high-power loads to provide efficient and stable power conversion.
STD120N4LF6-VB is suitable for a variety of low-voltage and high-current applications. With its high performance and low loss characteristics, it is an ideal choice for high-efficiency power switches and can provide excellent performance in various power management and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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