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STD11NM65N-VB Product details
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STD11NM65N-VB Product Introduction
STD11NM65N-VB is a high-voltage N-channel MOSFET in TO252 package, with a drain-source withstand voltage (VDS) of 650V and a gate drive voltage range (VGS) of ±30V, suitable for a variety of high-voltage applications. The on-resistance (RDS(ON)) of this MOSFET is 370mΩ (VGS=10V) and the maximum drain current (ID) is 11A. It can provide excellent conductivity and is suitable for high-efficiency applications. The use of super junction (SJ) multi-epitaxial (Multi-EPI) technology can ensure lower conduction losses and higher power density, and is widely used in power management, motor control and other fields.
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STD11NM65N-VB is a high-voltage N-channel MOSFET in TO252 package, with a drain-source withstand voltage (VDS) of 650V and a gate drive voltage range (VGS) of ±30V, suitable for a variety of high-voltage applications. The on-resistance (RDS(ON)) of this MOSFET is 370mΩ (VGS=10V) and the maximum drain current (ID) is 11A. It can provide excellent conductivity and is suitable for high-efficiency applications. The use of super junction (SJ) multi-epitaxial (Multi-EPI) technology can ensure lower conduction losses and higher power density, and is widely used in power management, motor control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------|------------------------|----------------------------------------------------|
| **Package type** | TO252 | Compact surface mount package, suitable for space-constrained high-voltage circuit design. |
| **Configuration** | Single N-channel | Single MOSFET unit design, simple structure, easy to drive and control. |
| **Drain-source withstand voltage (VDS)** | 650V | High withstand voltage, suitable for high-voltage power supply applications and industrial equipment. |
| **Gate drive voltage (VGS)** | ±30V | Wide drive voltage range, suitable for different drive circuit configurations. |
| **Throw-on voltage (Vth)** | 3.5V | Standard turn-on voltage, easy to be compatible with low-voltage drive logic. |
| **On-resistance (RDS(ON))** | 370mΩ@VGS=10V | Provides low conduction losses, helps improve system efficiency and reduces heat generation. |
| **Drain current (ID)** | 11A | Supports medium to high current loads, suitable for higher power switching applications. |
| **Technology type** | SJ_Multi-EPI | Super junction technology combined with multiple epitaxial processes to provide higher efficiency and power density. |
| **Operating temperature range** | -55°C to 150°C | Adapts to harsh working environments with high reliability and stability. |
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| **Parameter** | **Value** | **Description** |
|------------------|------------------------|----------------------------------------------------|
| **Package type** | TO252 | Compact surface mount package, suitable for space-constrained high-voltage circuit design. |
| **Configuration** | Single N-channel | Single MOSFET unit design, simple structure, easy to drive and control. |
| **Drain-source withstand voltage (VDS)** | 650V | High withstand voltage, suitable for high-voltage power supply applications and industrial equipment. |
| **Gate drive voltage (VGS)** | ±30V | Wide drive voltage range, suitable for different drive circuit configurations. |
| **Throw-on voltage (Vth)** | 3.5V | Standard turn-on voltage, easy to be compatible with low-voltage drive logic. |
| **On-resistance (RDS(ON))** | 370mΩ@VGS=10V | Provides low conduction losses, helps improve system efficiency and reduces heat generation. |
| **Drain current (ID)** | 11A | Supports medium to high current loads, suitable for higher power switching applications. |
| **Technology type** | SJ_Multi-EPI | Super junction technology combined with multiple epitaxial processes to provide higher efficiency and power density. |
| **Operating temperature range** | -55°C to 150°C | Adapts to harsh working environments with high reliability and stability. |
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Domain and module applications：
Application fields and module examples
1. **Power conversion module**
- **Applicable scenarios**: Switching power supply (SMPS), battery management system (BMS).
- **Example**: In the design of high-efficiency switching power supply, STD11NM65N-VB can be used as the main switch at the high-voltage input end, using its low on-resistance and high current capability to reduce power consumption while ensuring high efficiency.
2. **Power tools and home appliance control**
- **Applicable scenarios**: Motor drive circuits in power tools and appliances.
- **Example**: In the motor control circuit of power tools, this MOSFET can be used as the switch tube of the inverter to help achieve efficient motor drive, improve overall work efficiency and extend battery life.
3. **New energy and energy storage system**
- **Applicable scenarios**: Photovoltaic inverter, energy storage system.
- **Example**: In photovoltaic power generation systems, STD11NM65N-VB can be used in boost converters (DC-DC) to provide efficient energy conversion and system stability, and is particularly suitable for high-voltage DC systems.
4. **Electric vehicle charging system**
- **Applicable scenarios**: Electric vehicle chargers and battery management modules.
- **Example**: In electric vehicle charging systems, this MOSFET can be used as a switch for DC fast chargers to ensure efficient battery charging and reduce charging time and energy loss.
5. **Motor drive and industrial automation**
- **Applicable scenarios**: Industrial motor drive, electrical transmission system.
- **Example**: In the motor drive system of industrial automation, STD11NM65N-VB can be used as a power switch to improve motor control accuracy and reduce energy waste.
Through its low on-resistance, high current carrying capability and wide operating temperature range, the STD11NM65N-VB excels in many high-efficiency power supply and power conversion applications, especially those requiring high voltage and high current.
1. **Power conversion module**
- **Applicable scenarios**: Switching power supply (SMPS), battery management system (BMS).
- **Example**: In the design of high-efficiency switching power supply, STD11NM65N-VB can be used as the main switch at the high-voltage input end, using its low on-resistance and high current capability to reduce power consumption while ensuring high efficiency.
2. **Power tools and home appliance control**
- **Applicable scenarios**: Motor drive circuits in power tools and appliances.
- **Example**: In the motor control circuit of power tools, this MOSFET can be used as the switch tube of the inverter to help achieve efficient motor drive, improve overall work efficiency and extend battery life.
3. **New energy and energy storage system**
- **Applicable scenarios**: Photovoltaic inverter, energy storage system.
- **Example**: In photovoltaic power generation systems, STD11NM65N-VB can be used in boost converters (DC-DC) to provide efficient energy conversion and system stability, and is particularly suitable for high-voltage DC systems.
4. **Electric vehicle charging system**
- **Applicable scenarios**: Electric vehicle chargers and battery management modules.
- **Example**: In electric vehicle charging systems, this MOSFET can be used as a switch for DC fast chargers to ensure efficient battery charging and reduce charging time and energy loss.
5. **Motor drive and industrial automation**
- **Applicable scenarios**: Industrial motor drive, electrical transmission system.
- **Example**: In the motor drive system of industrial automation, STD11NM65N-VB can be used as a power switch to improve motor control accuracy and reduce energy waste.
Through its low on-resistance, high current carrying capability and wide operating temperature range, the STD11NM65N-VB excels in many high-efficiency power supply and power conversion applications, especially those requiring high voltage and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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