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STD11NM60N-VB Product details
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Product Introduction
STD11NM60N-VB is a high-voltage N-channel power MOSFET in a **TO252 package**. Based on **SJ_Multi-EPI technology**, this MOSFET has low on-resistance and high current carrying capacity, making it suitable for efficient power conversion applications. It has a drain-source voltage (VDS) operating range of 650V, supports a gate drive voltage (VGS) of ±30V, and has a typical turn-on threshold voltage (Vth) of 3.5V. It has an on-resistance of 500mΩ (@ VGS=10V) and can carry a drain current of up to 9A, providing excellent performance in applications requiring high efficiency and low energy consumption.
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STD11NM60N-VB is a high-voltage N-channel power MOSFET in a **TO252 package**. Based on **SJ_Multi-EPI technology**, this MOSFET has low on-resistance and high current carrying capacity, making it suitable for efficient power conversion applications. It has a drain-source voltage (VDS) operating range of 650V, supports a gate drive voltage (VGS) of ±30V, and has a typical turn-on threshold voltage (Vth) of 3.5V. It has an on-resistance of 500mΩ (@ VGS=10V) and can carry a drain current of up to 9A, providing excellent performance in applications requiring high efficiency and low energy consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------|--------------------------------------|
| **Package** | TO252 | Compact surface mount package suitable for medium and high power density designs. |
| **Configuration** | Single channel N-channel | Provides an efficient current conduction path. |
| **Drain-Source Voltage (VDS)** | 650V | Operating voltage range suitable for high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Highly tolerant gate drive voltage, providing design flexibility. |
| **Turning Voltage (Vth)** | 3.5V | Moderate turn-on threshold voltage, easy to be compatible with standard drive circuits. |
| **On-resistance (RDS(ON))** | 500mΩ (@ VGS=10V) | Low on-resistance, optimized power consumption and improved efficiency. |
| **Drain current (ID)** | 9A | Maximum continuous operating current capability. |
| **Technology** | SJ_Multi-EPI | Advanced super-junction multi-epitaxial technology, improved device efficiency and reduced heat loss. |
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------|--------------------------------------|
| **Package** | TO252 | Compact surface mount package suitable for medium and high power density designs. |
| **Configuration** | Single channel N-channel | Provides an efficient current conduction path. |
| **Drain-Source Voltage (VDS)** | 650V | Operating voltage range suitable for high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Highly tolerant gate drive voltage, providing design flexibility. |
| **Turning Voltage (Vth)** | 3.5V | Moderate turn-on threshold voltage, easy to be compatible with standard drive circuits. |
| **On-resistance (RDS(ON))** | 500mΩ (@ VGS=10V) | Low on-resistance, optimized power consumption and improved efficiency. |
| **Drain current (ID)** | 9A | Maximum continuous operating current capability. |
| **Technology** | SJ_Multi-EPI | Advanced super-junction multi-epitaxial technology, improved device efficiency and reduced heat loss. |
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Domain and module applications：
Application fields and module examples
1. **Power management system**
- In **high-voltage switch-mode power supplies (SMPS)**, the STD11NM60N-VB can be used as the main switch device for power management systems of industrial and consumer electronics. Its high drain-source voltage and low on-resistance enable it to perform well in the power conversion process, effectively reducing losses and improving overall system efficiency.
- In **LED lighting drive circuits**, as a constant current source controller, it can provide stable current for high-power LEDs while ensuring energy efficiency and working stability.
2. **Household appliances**
- In **household appliance control systems**, such as **air conditioners and refrigerators**, the STD11NM60N-VB can be used for motor control and high-voltage switch applications, especially in motor drive and temperature control circuits, to improve energy efficiency and reduce energy loss.
- In **microwave ovens** and **induction cookers**, this MOSFET is used as a switching element to control the working state of the heating element to ensure efficient energy transmission.
3. **Industrial Applications**
- In **Motor Drivers**, STD11NM60N-VB can be used to control the power conversion of DC and AC motors, and is widely used in automation control systems and power tools.
- In **Variable Frequency Drive Systems**, as a power switch, it supports efficient power conversion and is suitable for applications with high loads and high efficiency requirements.
4. **New Energy and Electric Transportation**
- In **Electric Vehicle Charging Systems** and **Photovoltaic Inverters**, STD11NM60N-VB can effectively perform high voltage conversion, manage battery charging and discharging processes, and ensure efficient energy transfer.
- In **Wind Turbines** and **Solar Panels** inverters, it is used as a power switch, which can work efficiently in high voltage environments and help optimize energy output.
The high-voltage performance, low on-resistance and strong current carrying capacity of this MOSFET enable it to play an important role in power control and conversion modules in multiple industries, especially in application scenarios that require high efficiency and low energy consumption.
1. **Power management system**
- In **high-voltage switch-mode power supplies (SMPS)**, the STD11NM60N-VB can be used as the main switch device for power management systems of industrial and consumer electronics. Its high drain-source voltage and low on-resistance enable it to perform well in the power conversion process, effectively reducing losses and improving overall system efficiency.
- In **LED lighting drive circuits**, as a constant current source controller, it can provide stable current for high-power LEDs while ensuring energy efficiency and working stability.
2. **Household appliances**
- In **household appliance control systems**, such as **air conditioners and refrigerators**, the STD11NM60N-VB can be used for motor control and high-voltage switch applications, especially in motor drive and temperature control circuits, to improve energy efficiency and reduce energy loss.
- In **microwave ovens** and **induction cookers**, this MOSFET is used as a switching element to control the working state of the heating element to ensure efficient energy transmission.
3. **Industrial Applications**
- In **Motor Drivers**, STD11NM60N-VB can be used to control the power conversion of DC and AC motors, and is widely used in automation control systems and power tools.
- In **Variable Frequency Drive Systems**, as a power switch, it supports efficient power conversion and is suitable for applications with high loads and high efficiency requirements.
4. **New Energy and Electric Transportation**
- In **Electric Vehicle Charging Systems** and **Photovoltaic Inverters**, STD11NM60N-VB can effectively perform high voltage conversion, manage battery charging and discharging processes, and ensure efficient energy transfer.
- In **Wind Turbines** and **Solar Panels** inverters, it is used as a power switch, which can work efficiently in high voltage environments and help optimize energy output.
The high-voltage performance, low on-resistance and strong current carrying capacity of this MOSFET enable it to play an important role in power control and conversion modules in multiple industries, especially in application scenarios that require high efficiency and low energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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