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STD11NM60ND-VB Product details
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STD11NM60ND-VB Product Introduction
STD11NM60ND-VB is a single-channel N-type power MOSFET in TO252 package, designed for high-voltage applications, with efficient switching performance and low on-resistance. The device has a maximum drain-source voltage of 650V, a maximum gate-source voltage of ±30V, and a continuous drain current capability of 9A, combined with an on-resistance of 500mΩ, making it very suitable for high-voltage power conversion, switching power supplies, and other high-efficiency power management applications. The super junction (SJ) multi-epitaxial technology it uses can not only effectively reduce conduction losses, but also improve switching performance and reliability. STD11NM60ND-VB is an ideal choice for high-efficiency power systems in fields such as power conversion and industrial control.
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STD11NM60ND-VB is a single-channel N-type power MOSFET in TO252 package, designed for high-voltage applications, with efficient switching performance and low on-resistance. The device has a maximum drain-source voltage of 650V, a maximum gate-source voltage of ±30V, and a continuous drain current capability of 9A, combined with an on-resistance of 500mΩ, making it very suitable for high-voltage power conversion, switching power supplies, and other high-efficiency power management applications. The super junction (SJ) multi-epitaxial technology it uses can not only effectively reduce conduction losses, but also improve switching performance and reliability. STD11NM60ND-VB is an ideal choice for high-efficiency power systems in fields such as power conversion and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD11NM60ND-VB Parameter Description
| Parameter | Description|
|----------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Turn-On Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 500mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 9A |
| **Technology** | Super Junction (SJ) Multi-Epitaxial Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Switching Performance** | High-speed switching capability, suitable for high-frequency applications |
| **Package Features** | TO252 package is small, suitable for compact electronic circuit design |
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| Parameter | Description|
|----------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Turn-On Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 500mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 9A |
| **Technology** | Super Junction (SJ) Multi-Epitaxial Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Switching Performance** | High-speed switching capability, suitable for high-frequency applications |
| **Package Features** | TO252 package is small, suitable for compact electronic circuit design |
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Domain and module applications：
Application fields and module examples
1. **High-voltage switching power supply (SMPS)**
STD11NM60ND-VB is very suitable for high-voltage power modules, such as power factor correction (PFC) circuits and main power conversion modules in AC-DC converters due to its 650V withstand voltage and low on-resistance. This allows it to reduce energy loss while providing high-efficiency conversion, and is widely used in computer power supplies, LED drive power supplies, etc.
2. **Industrial motor drive**
In industrial automation and motor control applications, STD11NM60ND-VB can be used in high-frequency motor drives and inverters, especially in situations that require higher power and precise control. Its low on-resistance and high-frequency switching performance ensure efficient operation of the motor drive system and reduce system energy loss.
3. **Home Appliance Control System**
The high withstand voltage characteristics and excellent switching performance of this MOSFET make it widely used in home appliances, such as inverter air conditioners, refrigerators, washing machines and other home appliances for power control and energy efficiency management. These appliances can benefit from its efficient power conversion characteristics and provide stable and reliable operation.
4. **Solar Photovoltaic Inverter**
STD11NM60ND-VB is suitable for the high-voltage DC-DC conversion part of solar inverters. Through its high withstand voltage characteristics and low switching losses, it can effectively improve the conversion efficiency of the inverter and provide stable power output in the field of solar power generation.
5. **Power Management Module (PMU)**
This MOSFET is also widely used in power management modules, especially those power systems that require high efficiency and low loss. In battery chargers, power tools and other power modules, STD11NM60ND-VB can improve system performance and ensure stable operation under various environmental conditions.
The STD11NM60ND-VB is a versatile, high-efficiency power MOSFET suitable for use in multiple industry fields, especially in power conversion and control applications requiring high voltage, high efficiency and low losses.
1. **High-voltage switching power supply (SMPS)**
STD11NM60ND-VB is very suitable for high-voltage power modules, such as power factor correction (PFC) circuits and main power conversion modules in AC-DC converters due to its 650V withstand voltage and low on-resistance. This allows it to reduce energy loss while providing high-efficiency conversion, and is widely used in computer power supplies, LED drive power supplies, etc.
2. **Industrial motor drive**
In industrial automation and motor control applications, STD11NM60ND-VB can be used in high-frequency motor drives and inverters, especially in situations that require higher power and precise control. Its low on-resistance and high-frequency switching performance ensure efficient operation of the motor drive system and reduce system energy loss.
3. **Home Appliance Control System**
The high withstand voltage characteristics and excellent switching performance of this MOSFET make it widely used in home appliances, such as inverter air conditioners, refrigerators, washing machines and other home appliances for power control and energy efficiency management. These appliances can benefit from its efficient power conversion characteristics and provide stable and reliable operation.
4. **Solar Photovoltaic Inverter**
STD11NM60ND-VB is suitable for the high-voltage DC-DC conversion part of solar inverters. Through its high withstand voltage characteristics and low switching losses, it can effectively improve the conversion efficiency of the inverter and provide stable power output in the field of solar power generation.
5. **Power Management Module (PMU)**
This MOSFET is also widely used in power management modules, especially those power systems that require high efficiency and low loss. In battery chargers, power tools and other power modules, STD11NM60ND-VB can improve system performance and ensure stable operation under various environmental conditions.
The STD11NM60ND-VB is a versatile, high-efficiency power MOSFET suitable for use in multiple industry fields, especially in power conversion and control applications requiring high voltage, high efficiency and low losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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