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STD11NM50N-VB Product details
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Product Introduction
STD11NM50N-VB is a unipolar N-channel MOSFET in TO-252 package with excellent performance of high withstand voltage and low on-resistance. Equipped with 650V drain-source voltage, 30V gate-source voltage and 11A maximum drain current capability, this MOSFET is suitable for various high-voltage applications. It adopts SJ_Multi-EPI technology, which is designed to improve conduction efficiency and reduce switching losses, providing higher stability and longer service life. This MOSFET has a wide range of applications in power switching, power management and industrial control.
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STD11NM50N-VB is a unipolar N-channel MOSFET in TO-252 package with excellent performance of high withstand voltage and low on-resistance. Equipped with 650V drain-source voltage, 30V gate-source voltage and 11A maximum drain current capability, this MOSFET is suitable for various high-voltage applications. It adopts SJ_Multi-EPI technology, which is designed to improve conduction efficiency and reduce switching losses, providing higher stability and longer service life. This MOSFET has a wide range of applications in power switching, power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------|---------------------------------------------|
| **Package** | TO-252 | Surface mount package for high-density circuit design|
| **Polarity and configuration** | Unipolar N-channel | High-efficiency energy conversion for high-voltage switching applications|
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage for high-voltage systems|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate-source voltage for safe operation|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-resistance (RDS(ON))** | 370mΩ @ VGS = 10V | On-resistance at standard gate drive voltage|
| **Drain current (ID)** | 11A | Maximum continuous drain current capability |
| **Technology** | SJ_Multi-EPI | Technology to improve conduction efficiency and reduce losses |
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| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------|---------------------------------------------|
| **Package** | TO-252 | Surface mount package for high-density circuit design|
| **Polarity and configuration** | Unipolar N-channel | High-efficiency energy conversion for high-voltage switching applications|
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage for high-voltage systems|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate-source voltage for safe operation|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on|
| **On-resistance (RDS(ON))** | 370mΩ @ VGS = 10V | On-resistance at standard gate drive voltage|
| **Drain current (ID)** | 11A | Maximum continuous drain current capability |
| **Technology** | SJ_Multi-EPI | Technology to improve conduction efficiency and reduce losses |
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Domain and module applications：
Application fields and module examples
1. **High-voltage power management**
STD11NM50N-VB is widely used in switching power supplies (SMPS), DC-DC converters and power factor correction (PFC) circuits. It can effectively reduce power consumption and improve conversion efficiency in high-voltage environments to meet the needs of efficient power management.
2. **Industrial automation and control**
In industrial equipment and automation control systems, STD11NM50N-VB can be used to control high-voltage loads and ensure stable operation of equipment. It is particularly suitable for motor drives, relay switches and inverters.
3. **Power electronics**
This MOSFET can be used in high-power power electronic modules such as electric vehicle charging stations, battery management systems and energy storage systems. Its high voltage and high current capabilities make it perform well in these applications.
4. **Automotive electronics**
In automotive applications, the STD11NM50N-VB is suitable for battery management, battery chargers, and power conversion modules, providing efficient power conversion solutions for electric vehicles (EV) and hybrid electric vehicles (HEV).
5. **Consumer electronics and home appliances**
This MOSFET can be used in power modules in consumer electronics such as TVs, refrigerators, and air conditioners, achieving efficient and safe power management through its low on-resistance and high voltage tolerance.
With its high withstand voltage, low on-resistance, and excellent switching performance, the STD11NM50N-VB is suitable for a variety of high-power and high-voltage applications, especially in the fields of power electronics, industrial automation, and automotive electronics.
1. **High-voltage power management**
STD11NM50N-VB is widely used in switching power supplies (SMPS), DC-DC converters and power factor correction (PFC) circuits. It can effectively reduce power consumption and improve conversion efficiency in high-voltage environments to meet the needs of efficient power management.
2. **Industrial automation and control**
In industrial equipment and automation control systems, STD11NM50N-VB can be used to control high-voltage loads and ensure stable operation of equipment. It is particularly suitable for motor drives, relay switches and inverters.
3. **Power electronics**
This MOSFET can be used in high-power power electronic modules such as electric vehicle charging stations, battery management systems and energy storage systems. Its high voltage and high current capabilities make it perform well in these applications.
4. **Automotive electronics**
In automotive applications, the STD11NM50N-VB is suitable for battery management, battery chargers, and power conversion modules, providing efficient power conversion solutions for electric vehicles (EV) and hybrid electric vehicles (HEV).
5. **Consumer electronics and home appliances**
This MOSFET can be used in power modules in consumer electronics such as TVs, refrigerators, and air conditioners, achieving efficient and safe power management through its low on-resistance and high voltage tolerance.
With its high withstand voltage, low on-resistance, and excellent switching performance, the STD11NM50N-VB is suitable for a variety of high-power and high-voltage applications, especially in the fields of power electronics, industrial automation, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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