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STD110NH02RT4G-VB Product details
Back to previous pageProduct introduction：
1. STD110NH02RT4G-VB Product Introduction
STD110NH02RT4G-VB is a high-performance single-channel N-type power MOSFET in TO252 (DPAK) package, suitable for high-efficiency and low conduction loss applications. This device uses Trench technology, with extremely low on-resistance and extremely high current carrying capacity, maximum drain-source voltage (VDS) of 20V, maximum gate-source voltage (VGS) of ±20V, on-resistance of 6mΩ (VGS=2.5V) and 4.5mΩ (VGS=4.5V), respectively, with ultra-low conduction loss. The maximum drain current is 100A, and the gate threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage and high-current high-frequency switching power supply systems.
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STD110NH02RT4G-VB is a high-performance single-channel N-type power MOSFET in TO252 (DPAK) package, suitable for high-efficiency and low conduction loss applications. This device uses Trench technology, with extremely low on-resistance and extremely high current carrying capacity, maximum drain-source voltage (VDS) of 20V, maximum gate-source voltage (VGS) of ±20V, on-resistance of 6mΩ (VGS=2.5V) and 4.5mΩ (VGS=4.5V), respectively, with ultra-low conduction loss. The maximum drain current is 100A, and the gate threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage and high-current high-frequency switching power supply systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|--------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single-channel MOSFET design. |
| **Drain-source voltage (VDS)** | 20V | Suitable for low-voltage high-power applications. |
| **Gate-source voltage (VGS)** | ±20V | Provides a wide gate drive range. |
| **Gate threshold voltage (Vth)** | 0.5V~1.5V | Provides fast response switching operation. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=2.5V | Ultra-low conduction loss, improve system efficiency. |
| | 4.5mΩ @ VGS=4.5V | Lower conduction loss, suitable for different driving voltages. |
| **Maximum drain current (ID)** | 100A | High current carrying capacity, suitable for high power applications. |
| **Technology type** | Trench | Trench technology, optimized switching performance and efficiency. |
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|--------------------------------------|
| **Package** | TO252 (DPAK) | Compact package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single-channel MOSFET design. |
| **Drain-source voltage (VDS)** | 20V | Suitable for low-voltage high-power applications. |
| **Gate-source voltage (VGS)** | ±20V | Provides a wide gate drive range. |
| **Gate threshold voltage (Vth)** | 0.5V~1.5V | Provides fast response switching operation. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=2.5V | Ultra-low conduction loss, improve system efficiency. |
| | 4.5mΩ @ VGS=4.5V | Lower conduction loss, suitable for different driving voltages. |
| **Maximum drain current (ID)** | 100A | High current carrying capacity, suitable for high power applications. |
| **Technology type** | Trench | Trench technology, optimized switching performance and efficiency. |
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Domain and module applications：
III. Application fields and module application examples
1. **Power management and conversion**
- **DC-DC converter**: In low-voltage and high-current DC-DC converters, STD110NH02RT4G-VB can provide extremely low on-resistance, reduce power loss, and improve conversion efficiency. It is suitable for mobile devices, battery management systems, portable power supplies, etc.
- **Battery charger**: This MOSFET can be used in high-frequency switching circuits in battery chargers, which helps improve charging efficiency and reduce power loss. It is suitable for mobile phones, laptops and other mobile devices.
2. **Automotive electronics**
- **Electric vehicle (EV) battery management system (BMS)**: The high current carrying capacity and low on-resistance of STD110NH02RT4G-VB are very suitable for high-efficiency switching circuits in electric vehicle battery management systems, helping to improve battery charging and discharging efficiency.
- **Automotive power modules**: In the high-efficiency power conversion modules in automobiles, the STD110NH02RT4G-VB is used as a core switching element to provide stable and reliable power supply, especially for low-voltage systems.
3. **Consumer electronics**
- **Power amplifiers**: In audio power amplifiers and other electronic devices, the high current capacity and low conduction loss characteristics of the STD110NH02RT4G-VB can improve the efficiency of the amplifier and reduce heat generation.
- **LED driver power**: Using this MOSFET in the driver power of LED lamps can ensure efficient power conversion and optimize the thermal management of the system.
4. **Industrial applications**
- **Motor drive and control**: In the inverter module for motor drive, the STD110NH02RT4G-VB can improve the operating efficiency of the motor, especially in control systems that require high starting current and fast response, showing great advantages.
- **Solar Inverter**: In solar inverters, using its low on-resistance and high current capability helps improve energy conversion efficiency and enhance the performance of the entire system.
STD110NH02RT4G-VB is widely used in high-efficiency power conversion, automotive electronics, consumer electronics, industrial control and other fields with its excellent low conduction loss, high current carrying capacity and wide operating voltage range, helping to optimize the efficiency and reliability of the power system.
1. **Power management and conversion**
- **DC-DC converter**: In low-voltage and high-current DC-DC converters, STD110NH02RT4G-VB can provide extremely low on-resistance, reduce power loss, and improve conversion efficiency. It is suitable for mobile devices, battery management systems, portable power supplies, etc.
- **Battery charger**: This MOSFET can be used in high-frequency switching circuits in battery chargers, which helps improve charging efficiency and reduce power loss. It is suitable for mobile phones, laptops and other mobile devices.
2. **Automotive electronics**
- **Electric vehicle (EV) battery management system (BMS)**: The high current carrying capacity and low on-resistance of STD110NH02RT4G-VB are very suitable for high-efficiency switching circuits in electric vehicle battery management systems, helping to improve battery charging and discharging efficiency.
- **Automotive power modules**: In the high-efficiency power conversion modules in automobiles, the STD110NH02RT4G-VB is used as a core switching element to provide stable and reliable power supply, especially for low-voltage systems.
3. **Consumer electronics**
- **Power amplifiers**: In audio power amplifiers and other electronic devices, the high current capacity and low conduction loss characteristics of the STD110NH02RT4G-VB can improve the efficiency of the amplifier and reduce heat generation.
- **LED driver power**: Using this MOSFET in the driver power of LED lamps can ensure efficient power conversion and optimize the thermal management of the system.
4. **Industrial applications**
- **Motor drive and control**: In the inverter module for motor drive, the STD110NH02RT4G-VB can improve the operating efficiency of the motor, especially in control systems that require high starting current and fast response, showing great advantages.
- **Solar Inverter**: In solar inverters, using its low on-resistance and high current capability helps improve energy conversion efficiency and enhance the performance of the entire system.
STD110NH02RT4G-VB is widely used in high-efficiency power conversion, automotive electronics, consumer electronics, industrial control and other fields with its excellent low conduction loss, high current carrying capacity and wide operating voltage range, helping to optimize the efficiency and reliability of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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