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STD10NM60N-VB Product details
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STD10NM60N-VB Product Introduction
STD10NM60N-VB is a high-performance unipolar N-channel power MOSFET in TO252 package, with a high drain-source withstand voltage (VDS) of 650V and a gate drive voltage range (VGS) of ±30V, suitable for high-voltage applications. Its on-resistance (RDS(ON)) is 500mΩ (VGS=10V), and the maximum drain current (ID) is 9A. It adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, with superior switching performance and efficiency, suitable for fields with high energy efficiency and low loss requirements.
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STD10NM60N-VB is a high-performance unipolar N-channel power MOSFET in TO252 package, with a high drain-source withstand voltage (VDS) of 650V and a gate drive voltage range (VGS) of ±30V, suitable for high-voltage applications. Its on-resistance (RDS(ON)) is 500mΩ (VGS=10V), and the maximum drain current (ID) is 9A. It adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, with superior switching performance and efficiency, suitable for fields with high energy efficiency and low loss requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------|------------------------|----------------------------------------------------|
| **Package type** | TO252 | Compact surface mount package, suitable for high-density circuit design. |
| **Configuration** | Single N-channel | Single MOSFET unit design, simple structure, easy to drive and control. |
| **Drain-source withstand voltage (VDS)** | 650V | Support high-voltage applications to ensure system safety and reliability. |
| **Gate drive voltage (VGS)** | ±30V | Wide range of drive voltage, suitable for a variety of drive circuit configurations. |
| **Turning voltage (Vth)** | 3.5V | Standard turning voltage, easy to integrate with standard control logic. |
| **On-resistance (RDS(ON))** | 500mΩ@VGS=10V | Provide low conduction loss and improve system efficiency. |
| **Drain Current (ID)** | 9A | Supports medium load current and is suitable for medium power applications of high voltage switches. |
| **Technology Type** | SJ_Multi-EPI | Super junction technology combined with multiple epitaxial processes provides higher efficiency and power density. |
| **Operating Temperature Range** | -55°C to 150°C | Supports operation in harsh environments with high reliability. |
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| **Parameter** | **Value** | **Description** |
|------------------|------------------------|----------------------------------------------------|
| **Package type** | TO252 | Compact surface mount package, suitable for high-density circuit design. |
| **Configuration** | Single N-channel | Single MOSFET unit design, simple structure, easy to drive and control. |
| **Drain-source withstand voltage (VDS)** | 650V | Support high-voltage applications to ensure system safety and reliability. |
| **Gate drive voltage (VGS)** | ±30V | Wide range of drive voltage, suitable for a variety of drive circuit configurations. |
| **Turning voltage (Vth)** | 3.5V | Standard turning voltage, easy to integrate with standard control logic. |
| **On-resistance (RDS(ON))** | 500mΩ@VGS=10V | Provide low conduction loss and improve system efficiency. |
| **Drain Current (ID)** | 9A | Supports medium load current and is suitable for medium power applications of high voltage switches. |
| **Technology Type** | SJ_Multi-EPI | Super junction technology combined with multiple epitaxial processes provides higher efficiency and power density. |
| **Operating Temperature Range** | -55°C to 150°C | Supports operation in harsh environments with high reliability. |
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Domain and module applications：
Application fields and module examples
1. **Power management module**
- **Applicable scenarios**: Industrial-grade switching power supplies (SMPS), battery chargers, and LED drivers.
- **Example**: In a switching power supply, the STD10NM60N-VB can be used as a high-voltage side main switch, which helps reduce conversion losses and improve efficiency due to its low RDS(ON) and high current capability.
2. **Lighting system**
- **Applicable scenarios**: High-efficiency LED lighting drive circuit.
- **Example**: In an LED driver, this MOSFET can be used for high-voltage switching in a DC-DC boost circuit to help achieve reliable constant current output.
3. **Motor drive module**
- **Applicable scenarios**: For low-power motor drivers in industrial automation.
- **Example**: In a motor drive module, this MOSFET can handle reverse drive current and ensure stable switching performance.
4. **New Energy Field**
- **Applicable Scenarios**: Photovoltaic inverters and energy storage systems.
- **Example**: In the boost module of the photovoltaic inverter, the device can support high-voltage DC input and achieve system stability through its high voltage resistance performance.
5. **Home Appliance Control Module**
- **Applicable Scenarios**: High-efficiency home appliances such as air conditioners and refrigerators.
- **Example**: In the home appliance inverter control circuit, STD10NM60N-VB is used as an inverter bridge switch tube to improve energy efficiency performance with its low loss characteristics.
The multifunctional characteristics of this device enable it to perform well in different application fields and is an ideal choice for high-voltage switch applications.
1. **Power management module**
- **Applicable scenarios**: Industrial-grade switching power supplies (SMPS), battery chargers, and LED drivers.
- **Example**: In a switching power supply, the STD10NM60N-VB can be used as a high-voltage side main switch, which helps reduce conversion losses and improve efficiency due to its low RDS(ON) and high current capability.
2. **Lighting system**
- **Applicable scenarios**: High-efficiency LED lighting drive circuit.
- **Example**: In an LED driver, this MOSFET can be used for high-voltage switching in a DC-DC boost circuit to help achieve reliable constant current output.
3. **Motor drive module**
- **Applicable scenarios**: For low-power motor drivers in industrial automation.
- **Example**: In a motor drive module, this MOSFET can handle reverse drive current and ensure stable switching performance.
4. **New Energy Field**
- **Applicable Scenarios**: Photovoltaic inverters and energy storage systems.
- **Example**: In the boost module of the photovoltaic inverter, the device can support high-voltage DC input and achieve system stability through its high voltage resistance performance.
5. **Home Appliance Control Module**
- **Applicable Scenarios**: High-efficiency home appliances such as air conditioners and refrigerators.
- **Example**: In the home appliance inverter control circuit, STD10NM60N-VB is used as an inverter bridge switch tube to improve energy efficiency performance with its low loss characteristics.
The multifunctional characteristics of this device enable it to perform well in different application fields and is an ideal choice for high-voltage switch applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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