STD10NM60ND-VB Product details
Product introduction:
The STD10NM60ND-VB is a high voltage N-channel power MOSFET in a **TO252 package**. The device is designed based on advanced **super junction (SJ) multi-epitaxial (Multi-EPI) technology**, with excellent on-resistance performance and high current carrying capability, making it ideal for applications requiring high efficiency and high reliability. It operates over a drain-source voltage (VDS) range of 650V, supports a gate drive voltage (VGS) of ±30V, and has a typical turn-on threshold voltage (Vth) of 3.5V. Its low on-resistance (RDS(ON) = 500mΩ @ VGS=10V) and maximum continuous drain current (ID = 9A) make it an ideal choice in power density optimized designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------|--------------------------------------|
| **Package** | TO252 | Compact surface mount package, suitable for high power density design. |
| **Configuration** | Single channel N-channel | Provides efficient current conduction path. |
| **Drain-Source Voltage (VDS)** | 650V | Operating voltage range suitable for high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | High tolerance gate drive voltage, enhanced design flexibility. |
| **Turning Voltage (Vth)** | 3.5V | Moderate turn-on threshold voltage, compatible with standard drive circuits. |
| **On-Resistance (RDS(ON))** | 500mΩ (@ VGS=10V) | Typical impedance in the on state, reducing power consumption. |
| **Drain Current (ID)** | 9A | Maximum continuous operating current capability. |
| **Technology** | SJ_Multi-EPI | Advanced super junction multi-epitaxial technology to improve efficiency and reduce heat loss. |
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Domain and module applications:
1. **Power modules**
- Used as the main switch device in **high-voltage switch power supplies (SMPS)**, suitable for industrial and communication power modules, providing efficient energy conversion and low-loss operation.
- Used in **LED drive circuits**, its high-voltage capability is suitable for constant current drive in high-power LED lighting systems.
2. **Household appliances**
- In the power control circuit of **induction cookers** or **microwave ovens**, used for the high-voltage power supply part to ensure efficient and stable energy output.
- In the motor drive part of **washing machines** and **refrigerators**, used for DC bus control and high-voltage switch applications.
3. **Industrial equipment**
- In **motor controllers**, used to control the power switch of high-voltage DC motors.
- In **industrial automation systems**, used as the main drive switch for load management and energy feedback circuits.
4. **New Energy Systems**
- Applied in **Photovoltaic Inverters** and **Electric Vehicle Charging Stations**, responsible for the high-voltage DC-DC conversion part.
- In the inverter module of **Wind Power Generation Equipment**, it helps manage power conversion and transmission.
This device has a wide range of applicability in any occasion that requires high efficiency, high reliability, and high voltage capabilities.
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