中文
English
STD10NM50N-VB Product details
Back to previous pageProduct introduction：
STD10NM50N-VB Product Introduction
STD10NM50N-VB is a single-channel N-type power MOSFET in TO252 package with high voltage resistance and reliable switching performance. The device has a maximum drain-source voltage of 650V and a maximum gate-source voltage of ±30V. Combined with a low on-resistance of 500mΩ and a continuous drain current capability of 9A, it is very suitable for high-voltage power conversion and switching applications. In addition, the device adopts super junction (SJ) multi-epitaxial technology, which effectively improves switching efficiency and reduces conduction losses, making it an ideal choice for energy-saving and high-efficiency applications.
---
STD10NM50N-VB is a single-channel N-type power MOSFET in TO252 package with high voltage resistance and reliable switching performance. The device has a maximum drain-source voltage of 650V and a maximum gate-source voltage of ±30V. Combined with a low on-resistance of 500mΩ and a continuous drain current capability of 9A, it is very suitable for high-voltage power conversion and switching applications. In addition, the device adopts super junction (SJ) multi-epitaxial technology, which effectively improves switching efficiency and reduces conduction losses, making it an ideal choice for energy-saving and high-efficiency applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD10NM50N-VB Parameter Description
| Parameter | Description|
|------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain Source Voltage (VDS)** | 650V |
| **Gate Source Voltage (VGS)** | ±30V |
| **Turn On Threshold Voltage (Vth)** | 3.5V |
| **On Resistance (RDS(ON))** | 500mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 9A |
| **Technology** | Super Junction (SJ) Multi-Epitaxial Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Switching Performance** | Fast switching, suitable for high frequency circuits |
| **Package characteristics** | TO252 package is small and easy to integrate into PCB |
---
| Parameter | Description|
|------------------|-------------------------------------------------|
| **Package Type** | TO252 |
| **Configuration** | Single Channel N-Type MOSFET |
| **Drain Source Voltage (VDS)** | 650V |
| **Gate Source Voltage (VGS)** | ±30V |
| **Turn On Threshold Voltage (Vth)** | 3.5V |
| **On Resistance (RDS(ON))** | 500mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 9A |
| **Technology** | Super Junction (SJ) Multi-Epitaxial Technology|
| **Operating Junction Temperature Range** | -55°C to +150°C |
| **Switching Performance** | Fast switching, suitable for high frequency circuits |
| **Package characteristics** | TO252 package is small and easy to integrate into PCB |
---
Domain and module applications：
Application fields and module examples
1. **High-voltage switching power supply (SMPS)**
The 650V high withstand voltage and low on-resistance of the STD10NM50N-VB make it ideal for the PFC (power factor correction) stage and main conversion stage in AC-DC switching power supplies. For example, in high-efficiency power modules for industrial equipment, it can significantly reduce losses and improve conversion efficiency.
2. **LED lighting drive circuit**
In high-voltage LED drive circuits, the device supports high-frequency operation and reduces heat generation with its super junction technology, making it suitable for constant current drive modules in commercial and home lighting systems.
3. **Motor control and industrial automation**
The STD10NM50N-VB can be used in inverters or driver modules in industrial automation equipment, such as motor drivers and industrial elevator control systems. Its high withstand voltage characteristics can cope with voltage fluctuation requirements in equipment.
4. **Solar inverter**
In solar photovoltaic inverters, this MOSFET can be used in the high-voltage DC-DC conversion part to ensure the efficiency and stability of the inverter process.
5. **Household appliances**
Suitable for power modules in household appliances such as inverter refrigerators and air conditioners, it helps to improve the energy-saving performance of the equipment and reduce electromagnetic interference.
STD10NM50N-VB is a versatile and reliable high-voltage MOSFET that is suitable for a variety of industrial and consumer electronics fields, providing efficient and stable solutions.
1. **High-voltage switching power supply (SMPS)**
The 650V high withstand voltage and low on-resistance of the STD10NM50N-VB make it ideal for the PFC (power factor correction) stage and main conversion stage in AC-DC switching power supplies. For example, in high-efficiency power modules for industrial equipment, it can significantly reduce losses and improve conversion efficiency.
2. **LED lighting drive circuit**
In high-voltage LED drive circuits, the device supports high-frequency operation and reduces heat generation with its super junction technology, making it suitable for constant current drive modules in commercial and home lighting systems.
3. **Motor control and industrial automation**
The STD10NM50N-VB can be used in inverters or driver modules in industrial automation equipment, such as motor drivers and industrial elevator control systems. Its high withstand voltage characteristics can cope with voltage fluctuation requirements in equipment.
4. **Solar inverter**
In solar photovoltaic inverters, this MOSFET can be used in the high-voltage DC-DC conversion part to ensure the efficiency and stability of the inverter process.
5. **Household appliances**
Suitable for power modules in household appliances such as inverter refrigerators and air conditioners, it helps to improve the energy-saving performance of the equipment and reduce electromagnetic interference.
STD10NM50N-VB is a versatile and reliable high-voltage MOSFET that is suitable for a variety of industrial and consumer electronics fields, providing efficient and stable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
