中文
English
STD10N60M2-VB Product details
Back to previous pageProduct introduction：
1. STD10N60M2-VB Product Introduction
STD10N60M2-VB is a high-performance single-channel N-type power MOSFET designed in TO252 (DPAK) package with compact size and excellent heat dissipation performance. This device adopts Super Junction multi-layer epitaxial technology (SJ_Multi-EPI) to achieve lower on-resistance and switching loss in high-voltage applications, while supporting a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its on-resistance is 500mΩ (VGS=10V), the maximum continuous drain current is 9A, and the gate threshold voltage is 3.5V. STD10N60M2-VB is an ideal choice for designs with high efficiency and high reliability requirements.
---
STD10N60M2-VB is a high-performance single-channel N-type power MOSFET designed in TO252 (DPAK) package with compact size and excellent heat dissipation performance. This device adopts Super Junction multi-layer epitaxial technology (SJ_Multi-EPI) to achieve lower on-resistance and switching loss in high-voltage applications, while supporting a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its on-resistance is 500mΩ (VGS=10V), the maximum continuous drain current is 9A, and the gate threshold voltage is 3.5V. STD10N60M2-VB is an ideal choice for designs with high efficiency and high reliability requirements.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-----------------------------|-------------------------------------|
| **Package** | TO252 | Compact DPAK package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single channel design, easy for circuit integration. |
| **Drain-source voltage (VDS)** | 650V | Supports high-voltage application scenarios. |
| **Gate-source voltage (VGS)** | ±30V | Provides a wide range of gate drive capabilities. |
| **Gate threshold voltage (Vth)** | 3.5V | Ensures stable switching operation in high-noise environments. |
| **On-resistance (RDS(ON))** | 500mΩ @ VGS=10V | Low conduction loss, improved efficiency. |
| **Maximum drain current (ID)** | 9A | Provides medium power output capability. |
| **Technology type** | SJ_Multi-EPI | Super junction technology, optimized performance and efficiency. |
---
| **Parameter** | **Value** | **Description** |
|---------------------|-----------------------------|-------------------------------------|
| **Package** | TO252 | Compact DPAK package, suitable for high-density design. |
| **Configuration** | Single N-channel | Single channel design, easy for circuit integration. |
| **Drain-source voltage (VDS)** | 650V | Supports high-voltage application scenarios. |
| **Gate-source voltage (VGS)** | ±30V | Provides a wide range of gate drive capabilities. |
| **Gate threshold voltage (Vth)** | 3.5V | Ensures stable switching operation in high-noise environments. |
| **On-resistance (RDS(ON))** | 500mΩ @ VGS=10V | Low conduction loss, improved efficiency. |
| **Maximum drain current (ID)** | 9A | Provides medium power output capability. |
| **Technology type** | SJ_Multi-EPI | Super junction technology, optimized performance and efficiency. |
---
Domain and module applications：
III. Application fields and module application examples
1. **Industrial field**
- **Motor drive controller**: In medium-voltage motor drive, STD10N60M2-VB can effectively improve the system's operating reliability and efficiency through its high withstand voltage and low loss characteristics.
- **Power inverter**: A high-voltage power management module suitable for factory equipment, providing energy-efficient AC-DC or DC-DC conversion.
2. **Consumer electronics**
- **Power adapter and charger**: Suitable for high-power adapters above 100W, using its low on-resistance to achieve high energy conversion efficiency.
- **Power module for TV and audio systems**: Helps optimize the product's standby power consumption while providing stable power supply.
3. **New energy applications**
- **Photovoltaic inverter**: The high voltage and low loss characteristics of STD10N60M2-VB are very suitable for the inverter circuit design of small and medium-sized photovoltaic systems.
- **Energy Storage System**: In energy storage battery charging and discharging modules, this MOSFET can significantly improve the efficiency of switching frequency.
4. **Automotive Electronics**
- **On-Board Charger (OBC)**: Supports high-voltage operating environment while ensuring thermal stability and reliability.
- **On-Board DC Converter (DC-DC)**: Suitable for efficient DC-DC conversion modules in electric vehicles.
With its excellent high-voltage characteristics and low-loss performance, the STD10N60M2-VB can provide reliable and efficient solutions in a variety of applications.
1. **Industrial field**
- **Motor drive controller**: In medium-voltage motor drive, STD10N60M2-VB can effectively improve the system's operating reliability and efficiency through its high withstand voltage and low loss characteristics.
- **Power inverter**: A high-voltage power management module suitable for factory equipment, providing energy-efficient AC-DC or DC-DC conversion.
2. **Consumer electronics**
- **Power adapter and charger**: Suitable for high-power adapters above 100W, using its low on-resistance to achieve high energy conversion efficiency.
- **Power module for TV and audio systems**: Helps optimize the product's standby power consumption while providing stable power supply.
3. **New energy applications**
- **Photovoltaic inverter**: The high voltage and low loss characteristics of STD10N60M2-VB are very suitable for the inverter circuit design of small and medium-sized photovoltaic systems.
- **Energy Storage System**: In energy storage battery charging and discharging modules, this MOSFET can significantly improve the efficiency of switching frequency.
4. **Automotive Electronics**
- **On-Board Charger (OBC)**: Supports high-voltage operating environment while ensuring thermal stability and reliability.
- **On-Board DC Converter (DC-DC)**: Suitable for efficient DC-DC conversion modules in electric vehicles.
With its excellent high-voltage characteristics and low-loss performance, the STD10N60M2-VB can provide reliable and efficient solutions in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
