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STD100NH02LT4-VB Product details

Product introduction:

Product Introduction

STD100NH02LT4-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. With a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 100A, this product is suitable for applications requiring high performance, low power consumption and fast switching. Its on-resistance (RDS(ON)) is 4.5mΩ at VGS=4.5V, ensuring low conduction losses and improving overall energy efficiency. STD100NH02LT4-VB uses Trench technology, which enables the MOSFET to provide excellent performance at low voltage operation, and is particularly suitable for high power density and high efficiency power management, battery protection and load switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

| **Parameter** | **Specification** | **Description** |
|-----------------|--------------------------------------------|---------------------------------------------------------|
| **Package** | TO252 | The TO252 package is suitable for applications that require a smaller package with higher current carrying capacity. |
| **Channel Configuration** | Single N-Channel | Single N-Channel is designed for high-efficiency load switching and power management. |
| **VDS** | 20V | The maximum drain-source voltage is 20V, suitable for low-voltage systems. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, suitable for common gate drive voltage ranges. |
| **Vth** | 0.5V ~ 1.5V | The startup voltage range is 0.5V ~ 1.5V, ensuring startup for low-voltage operation. |
| **RDS(ON)** | 6mΩ@VGS=2.5V, 4.5mΩ@VGS=4.5V | On-resistance is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, providing low conduction losses. |
| **ID** | 100A | Maximum drain current is 100A, suitable for high current load switching applications. |
| **Technology** | Trench | Trench technology optimizes conduction performance and switching efficiency, reducing power losses. |

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Domain and module applications:

Applications and module examples

1. **Power management system**
STD100NH02LT4-VB is widely used in power management systems, especially in high current applications such as power adapters, DC-DC converters, etc. Its low on-resistance ensures low power loss and high conversion efficiency, which can improve the overall performance and energy efficiency of the system and is suitable for high-efficiency power modules.

2. **Battery protection circuit**
This MOSFET is suitable for various battery management and protection circuits, especially in portable electronic devices, mobile power supplies and power tools. Due to its low on-resistance and high current handling capability, it can effectively control the battery charging and discharging process, provide over-current and over-voltage protection, and extend the battery life.

3. **High-efficiency load switch**
In load switch applications, STD100NH02LT4-VB provides extremely low on-resistance and fast response time, which can effectively control the switching state of the load. It is particularly suitable for systems that require fast switching and high reliability, such as automation equipment, motor drives, lighting systems, etc.

4. **Electric Vehicle (EV) Applications**
In the battery management system of electric vehicles and hybrid electric vehicles (HEV), the STD100NH02LT4-VB can be used to efficiently control the flow of current. Its high current handling capability and low on-resistance make it excel in functions such as battery pack balancing and overload protection.

5. **Communication Equipment Power Management**
Due to its excellent switching performance, the STD100NH02LT4-VB is also widely used in the power management module of communication equipment, which can effectively stabilize the power supply, reduce energy loss, and ensure stable operation of the equipment. Suitable for wireless base stations, routers and other communication hardware.

6. **LED Drive Circuit**
In the LED drive circuit, the STD100NH02LT4-VB, as a switching element, can provide efficient current control to ensure stable operation of the LED lighting system. It is particularly suitable for use in high-power LED lighting systems, reducing energy losses, increasing brightness and service life.

7. **Automotive power control**
This MOSFET can also be used in automotive power systems, responsible for controlling the current flow and load switching of the vehicle battery. Due to its excellent switching efficiency and low power consumption, the STB100NH02LT4-VB plays an important role in battery management, on-board power conversion and vehicle electronic control units in electric vehicles.

8. **High-power radio applications**
Due to its high current capacity, the STD100NH02LT4-VB can be used as a switching element in high-power radio communication equipment, ensuring efficient current control and reducing power losses. It is suitable for power switching in radio transmitters, satellite communication equipment and other radio applications.

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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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