STB80NF55L-08-VB Product details
Product introduction:
**STB80NF55L-08-VB** is a single N-channel MOSFET in a TO263 package with a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 150A. This MOSFET uses Trench technology and has an extremely low on-resistance (RDS(ON)). At VGS=10V, the RDS(ON) is 4mΩ. This makes it very suitable for high-power applications, especially in systems that require high current and high efficiency, which can significantly reduce power losses and improve the overall efficiency of the system. Its low on-resistance and excellent current handling capability make it an ideal choice for many fields such as power management, motor drive, industrial control and battery management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | The TO263 package is suitable for high current applications, has good heat dissipation and mechanical strength, and is suitable for demanding applications. |
| **Configuration** | Single N-channel | Single N-channel MOSFET is suitable for various switching power supplies, drive circuits, and motor control systems. |
| **Drain-source voltage (VDS)** | 60V | The maximum drain-source voltage is 60V, suitable for medium and low voltage power management, motor drive and power conversion applications. |
| **Gate-source voltage (VGS)** | ±20V | The gate-source voltage range is ±20V, suitable for common power control and drive circuits. |
| **Threshold voltage (Vth)** | 3V | The threshold voltage of this MOSFET is 3V, suitable for starting work at low voltage and optimizing switching performance. |
| **On-resistance (RDS(ON))** | 4mΩ (@VGS=10V) | At a gate voltage of 10V, the on-resistance is 4mΩ, which can greatly reduce power loss and improve switching efficiency. |
| **Drain current (ID)** | 150A | The maximum drain current is 150A, suitable for power conversion and drive applications with high current loads. |
| **Technology** | Trench | Trench technology has lower on-resistance and excellent switching performance, suitable for high-efficiency power systems and high-speed switching circuits. |
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Domain and module applications:
1. **High-efficiency power management (Power Management Systems)**
**STB80NF55L-08-VB** is suitable for high-current power supplies in power management systems, such as DC-DC converters, AC-DC power supplies, power factor correction circuits (PFC), etc. Due to its low on-resistance and high current carrying capacity, this MOSFET can effectively reduce the loss in the power conversion process and provide higher energy efficiency. It is widely used in industrial power supplies, battery chargers and high-efficiency power conversion systems that require high efficiency.
2. **Motor drive (Motor Drive Systems)**
In motor drive systems, especially high-current applications (such as industrial robots, power tools and household appliances), **STB80NF55L-08-VB** can be used as a switching element to efficiently control the start, stop and speed regulation of the motor. Its low on-resistance and high current capability help motor systems improve efficiency, reduce heat and extend equipment life. It is widely used in fields such as variable frequency drives (VFDs), electric vehicles and automation equipment.
3. **Automotive Electronics**
This MOSFET is also very suitable for the automotive electronics field, especially in applications such as battery management systems (BMS) and power control units (PCU) in electric vehicles (EV) and hybrid electric vehicles (HEV). **STB80NF55L-08-VB** can handle large currents, optimize battery charge and discharge control, and reduce system energy losses, enhancing the energy efficiency and endurance of electric vehicles.
4. **Industrial Control and Energy Management**
**STB80NF55L-08-VB** is widely used in high-current switches and power management modules in industrial automation systems. Its high current handling capability makes it an ideal choice for power electronic converters, UPS (uninterruptible power supply), generator control, and renewable energy systems such as solar inverters and wind power generation control systems.
5. **LED Driver Systems**
**STB80NF55L-08-VB** is also suitable for LED driver systems, especially LED lighting applications that require high power and high current. Due to its low on-resistance and high current capability, it can effectively control the brightness of LED lighting and improve the overall efficiency of the system. It is widely used in smart lighting, outdoor lighting and high-power LED lighting systems.
6. **Battery Management Systems**
In battery management systems, especially for electric vehicles (EVs) and large-scale energy storage systems, **STB80NF55L-08-VB** provides efficient power switching functions. It can help manage the charging and discharging process of the battery, ensuring the stability and efficiency of the system under high current loads, while reducing energy loss and extending battery life.
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