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STB80NF55L-08-1-VB Product details
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Product Introduction
**STB80NF55L-08-1-VB** is a high-performance single-channel N-type MOSFET in **TO262** package, designed for applications requiring high current and low on-resistance. Its maximum drain-source voltage **VDS** is **60V**, and its maximum drain current **ID** is **120A**, which is suitable for high-efficiency power conversion, motor drive, LED drive and other fields. This MOSFET adopts **Trench technology** and has extremely low on-resistance (**6mΩ** at **VGS=10V**), which can significantly reduce power loss and improve the overall efficiency of the system.
Its threshold voltage **Vth = 2.5V** can be turned on at a relatively low gate-source voltage, making the switching speed faster and the response time shorter, which is suitable for systems that require efficient switching operations. Due to its high current carrying capability and low power consumption, **STB80NF55L-08-1-VB** is widely used in various power conversion and drive applications, especially those requiring high current and low loss.
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**STB80NF55L-08-1-VB** is a high-performance single-channel N-type MOSFET in **TO262** package, designed for applications requiring high current and low on-resistance. Its maximum drain-source voltage **VDS** is **60V**, and its maximum drain current **ID** is **120A**, which is suitable for high-efficiency power conversion, motor drive, LED drive and other fields. This MOSFET adopts **Trench technology** and has extremely low on-resistance (**6mΩ** at **VGS=10V**), which can significantly reduce power loss and improve the overall efficiency of the system.
Its threshold voltage **Vth = 2.5V** can be turned on at a relatively low gate-source voltage, making the switching speed faster and the response time shorter, which is suitable for systems that require efficient switching operations. Due to its high current carrying capability and low power consumption, **STB80NF55L-08-1-VB** is widely used in various power conversion and drive applications, especially those requiring high current and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|-----------------------|---------------------|-------------|--------------------------------------------------------------|
| **Package type** | TO262 | - | Uses TO262 surface mount package, suitable for high power applications, providing good heat dissipation performance. |
| **Configuration** | Single channel N type | - | Suitable for high-performance switching applications, providing low on-resistance and high current carrying capacity. |
| **Maximum drain-source voltage (VDS)** | 60V | V | The maximum drain-source voltage is 60V, suitable for low voltage power conversion and drive applications. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for a variety of control circuits. |
| **Threshold Voltage(Vth)** | 2.5V | V | Lower threshold voltage helps increase system switching speed and optimize efficiency. |
| **On-resistance(RDS(ON))** | 6mΩ (@VGS=10V) | mΩ | Very low on-resistance at 10V gate-source voltage, reducing power loss and improving efficiency. |
| **Maximum Drain Current(ID)** | 120A | A | High current carrying capability for high current power conversion applications. |
| **Technology Type** | Trench | - | Using Trench technology, providing lower on-resistance and higher switching efficiency. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|-----------------------|---------------------|-------------|--------------------------------------------------------------|
| **Package type** | TO262 | - | Uses TO262 surface mount package, suitable for high power applications, providing good heat dissipation performance. |
| **Configuration** | Single channel N type | - | Suitable for high-performance switching applications, providing low on-resistance and high current carrying capacity. |
| **Maximum drain-source voltage (VDS)** | 60V | V | The maximum drain-source voltage is 60V, suitable for low voltage power conversion and drive applications. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for a variety of control circuits. |
| **Threshold Voltage(Vth)** | 2.5V | V | Lower threshold voltage helps increase system switching speed and optimize efficiency. |
| **On-resistance(RDS(ON))** | 6mΩ (@VGS=10V) | mΩ | Very low on-resistance at 10V gate-source voltage, reducing power loss and improving efficiency. |
| **Maximum Drain Current(ID)** | 120A | A | High current carrying capability for high current power conversion applications. |
| **Technology Type** | Trench | - | Using Trench technology, providing lower on-resistance and higher switching efficiency. |
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Domain and module applications：
Applications and Module Examples
1. **Switching Power Supplies**
**STB80NF55L-08-1-VB** is widely used in **DC-DC converters** and **AC-DC power supplies**, especially in high-efficiency switching power supply systems. Due to its **6mΩ** low on-resistance, this MOSFET can significantly reduce power losses and improve power conversion efficiency. It can be used in a variety of applications such as computer power supplies, telecommunication equipment power supplies, industrial power supplies, etc., helping to achieve more efficient energy conversion and less heat generation.
2. **Motor Drives**
In **motor drive systems**, **STB80NF55L-08-1-VB** can also play an excellent role. Especially in **power tools**, **electric vehicles** and **home appliance automation equipment**, the high current carrying capacity and low on-resistance of MOSFET make it an ideal choice for high-efficiency motor drive systems. It can efficiently drive the motor, reduce the power loss in the motor drive circuit, and ensure the smooth and efficient operation of the motor.
3. **LED Drivers**
**STB80NF55L-08-1-VB** is suitable for **LED drive systems**, especially **high-power LED lighting applications**. Due to its low on-resistance and high current carrying capacity, this MOSFET can effectively reduce the power loss in the drive circuit and improve the energy efficiency and stability of the lighting system. Whether it is industrial lighting, commercial lighting or home lighting, **STB80NF55L-08-1-VB** can provide a stable and efficient LED drive solution.
4. **Battery Management Systems (BMS)**
This MOSFET is suitable for **battery management systems**, especially battery management modules in **electric vehicles (EVs)** and **energy storage systems**. Due to the high current carrying capacity and low power loss provided by **STB80NF55L-08-1-VB**, it can efficiently control the charging and discharging process of the battery, ensuring the safe and efficient operation of the battery system. This makes it play an important role in electric vehicles, hybrid vehicles, and various energy storage systems.
5. **Automotive Electronics**
**STB80NF55L-08-1-VB** is also widely used in **automotive electronic systems**, especially in power management, on-board chargers, and motor drive modules. Its excellent performance makes it a key component in automotive electrical systems, ensuring stable battery charging and discharging processes and providing efficient power drive for electric vehicles or hybrid vehicles.
6. **Smart Grids**
This MOSFET also has important applications in **smart grid** systems, especially for power conversion and distribution modules. Its low on-resistance and high switching efficiency help optimize the power flow of the grid and ensure the stable operation of the grid system. **STB80NF55L-08-1-VB** can effectively support high-efficiency power conversion, especially in high-current and high-efficiency applications, improving the overall efficiency of smart grids.
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**STB80NF55L-08-1-VB** is a high-efficiency, high-current carrying MOSFET that is widely used in switching power supplies, motor drives, LED drives, battery management, automotive electronics, and smart grids. Its low on-resistance and high current capacity make it an excellent choice for power conversion and drive applications that require high efficiency and low power loss.
1. **Switching Power Supplies**
**STB80NF55L-08-1-VB** is widely used in **DC-DC converters** and **AC-DC power supplies**, especially in high-efficiency switching power supply systems. Due to its **6mΩ** low on-resistance, this MOSFET can significantly reduce power losses and improve power conversion efficiency. It can be used in a variety of applications such as computer power supplies, telecommunication equipment power supplies, industrial power supplies, etc., helping to achieve more efficient energy conversion and less heat generation.
2. **Motor Drives**
In **motor drive systems**, **STB80NF55L-08-1-VB** can also play an excellent role. Especially in **power tools**, **electric vehicles** and **home appliance automation equipment**, the high current carrying capacity and low on-resistance of MOSFET make it an ideal choice for high-efficiency motor drive systems. It can efficiently drive the motor, reduce the power loss in the motor drive circuit, and ensure the smooth and efficient operation of the motor.
3. **LED Drivers**
**STB80NF55L-08-1-VB** is suitable for **LED drive systems**, especially **high-power LED lighting applications**. Due to its low on-resistance and high current carrying capacity, this MOSFET can effectively reduce the power loss in the drive circuit and improve the energy efficiency and stability of the lighting system. Whether it is industrial lighting, commercial lighting or home lighting, **STB80NF55L-08-1-VB** can provide a stable and efficient LED drive solution.
4. **Battery Management Systems (BMS)**
This MOSFET is suitable for **battery management systems**, especially battery management modules in **electric vehicles (EVs)** and **energy storage systems**. Due to the high current carrying capacity and low power loss provided by **STB80NF55L-08-1-VB**, it can efficiently control the charging and discharging process of the battery, ensuring the safe and efficient operation of the battery system. This makes it play an important role in electric vehicles, hybrid vehicles, and various energy storage systems.
5. **Automotive Electronics**
**STB80NF55L-08-1-VB** is also widely used in **automotive electronic systems**, especially in power management, on-board chargers, and motor drive modules. Its excellent performance makes it a key component in automotive electrical systems, ensuring stable battery charging and discharging processes and providing efficient power drive for electric vehicles or hybrid vehicles.
6. **Smart Grids**
This MOSFET also has important applications in **smart grid** systems, especially for power conversion and distribution modules. Its low on-resistance and high switching efficiency help optimize the power flow of the grid and ensure the stable operation of the grid system. **STB80NF55L-08-1-VB** can effectively support high-efficiency power conversion, especially in high-current and high-efficiency applications, improving the overall efficiency of smart grids.
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**STB80NF55L-08-1-VB** is a high-efficiency, high-current carrying MOSFET that is widely used in switching power supplies, motor drives, LED drives, battery management, automotive electronics, and smart grids. Its low on-resistance and high current capacity make it an excellent choice for power conversion and drive applications that require high efficiency and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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