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STB80NF03L-04-VB Product details
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Product Introduction
STB80NF03L-04-VB is a high-performance N-channel MOSFET in TO262 package, designed for high-efficiency power supply and power control systems. It has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 90A, suitable for medium and low voltage, high current switching applications. This MOSFET uses Trench technology and has a very low on-resistance (RDS(ON)) - 4mΩ at VGS=10V and 7mΩ at VGS=4.5V. Due to its ultra-low on-resistance and high current capability, the STB80NF03L-04-VB can provide excellent performance in areas such as high-efficiency power management, DC-DC converters and motor drive systems.
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STB80NF03L-04-VB is a high-performance N-channel MOSFET in TO262 package, designed for high-efficiency power supply and power control systems. It has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 90A, suitable for medium and low voltage, high current switching applications. This MOSFET uses Trench technology and has a very low on-resistance (RDS(ON)) - 4mΩ at VGS=10V and 7mΩ at VGS=4.5V. Due to its ultra-low on-resistance and high current capability, the STB80NF03L-04-VB can provide excellent performance in areas such as high-efficiency power management, DC-DC converters and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
| **Parameter** | **Specification** | **Description** |
|-----------------|--------------------------------------------|--------------------------------------------------------|
| **Package** | TO262 | The TO262 package is suitable for medium and high power switching applications and provides good heat dissipation performance. |
| **Channel Configuration** | Single N-Channel | The single N-Channel design provides efficient switching control and optimizes conduction losses. |
| **VDS** | 30V | The maximum drain-source voltage is 30V, suitable for applications in the low to medium voltage range. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, suitable for common power supply voltage ranges. |
| **Vth** | 1.7V | The startup voltage is 1.7V, capable of starting at low voltage. |
| **RDS(ON)** | 7mΩ@VGS=4.5V, 4mΩ@VGS=10V | The on-resistance is 7mΩ at VGS=4.5V and 4mΩ at VGS=10V, providing extremely low conduction losses. |
| **ID** | 90A | The maximum drain current is 90A, suitable for high current load applications. |
| **Technology** | Trench | Trench technology provides lower on-resistance and good switching characteristics, optimizing power losses. |
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| **Parameter** | **Specification** | **Description** |
|-----------------|--------------------------------------------|--------------------------------------------------------|
| **Package** | TO262 | The TO262 package is suitable for medium and high power switching applications and provides good heat dissipation performance. |
| **Channel Configuration** | Single N-Channel | The single N-Channel design provides efficient switching control and optimizes conduction losses. |
| **VDS** | 30V | The maximum drain-source voltage is 30V, suitable for applications in the low to medium voltage range. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, suitable for common power supply voltage ranges. |
| **Vth** | 1.7V | The startup voltage is 1.7V, capable of starting at low voltage. |
| **RDS(ON)** | 7mΩ@VGS=4.5V, 4mΩ@VGS=10V | The on-resistance is 7mΩ at VGS=4.5V and 4mΩ at VGS=10V, providing extremely low conduction losses. |
| **ID** | 90A | The maximum drain current is 90A, suitable for high current load applications. |
| **Technology** | Trench | Trench technology provides lower on-resistance and good switching characteristics, optimizing power losses. |
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Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**
The STB80NF03L-04-VB is suitable for switching power supplies (SMPS), especially in medium voltage power conversion applications that require high current and low power loss. Due to its low RDS(ON) and high current handling capability, this MOSFET can ensure high efficiency of power conversion and reduce heat generation in the system. It is widely used in LED driver power supplies, DC-DC converters and power adapters.
2. **Motor Drive System**
In motor control systems, the STB80NF03L-04-VB, as an efficient power switching element, can provide low loss and high current capability under high speed and high load conditions, and is particularly suitable for motor control modules that require low power consumption and high efficiency. Its low on-resistance makes it very suitable for applications such as industrial automation, robotics and power tools.
3. **Electric Vehicle (EV) Charging Management**
Due to its high current capability of 90A and low on-resistance, the STB80NF03L-04-VB is an ideal choice for EV charging management systems. It can effectively control the battery charging and discharging process, reduce power loss and heat in the battery management system, and improve charging efficiency. It is suitable for battery management systems (BMS) and charging stations for electric vehicles.
4. **Battery Management System (BMS)**
In the battery management system (BMS), the STB80NF03L-04-VB provides efficient power switching functions, which can stably control the charging and discharging process of the battery pack. The low on-resistance and high current capability make it particularly suitable for high-efficiency battery management systems, which are widely used in energy storage systems, consumer electronic devices and power tools.
5. **Power Converters and Inverters**
The STB80NF03L-04-VB is also widely used in power electronic systems, especially in inverters and power converters. Its 30V drain-source voltage and 90A high current capability make it suitable for low voltage and high current applications such as solar inverters, UPS power systems, and other high-efficiency power conversion equipment.
6. **Radio Frequency (RF) Power Amplifier**
STB80NF03L-04-VB also excels in RF power amplifiers, where its low RDS(ON) and high efficiency characteristics enable it to provide stable power output in high-frequency applications. It is commonly used in communications equipment and test equipment, especially in systems that require fast switching and high power transmission.
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1. **Switching Power Supply (SMPS)**
The STB80NF03L-04-VB is suitable for switching power supplies (SMPS), especially in medium voltage power conversion applications that require high current and low power loss. Due to its low RDS(ON) and high current handling capability, this MOSFET can ensure high efficiency of power conversion and reduce heat generation in the system. It is widely used in LED driver power supplies, DC-DC converters and power adapters.
2. **Motor Drive System**
In motor control systems, the STB80NF03L-04-VB, as an efficient power switching element, can provide low loss and high current capability under high speed and high load conditions, and is particularly suitable for motor control modules that require low power consumption and high efficiency. Its low on-resistance makes it very suitable for applications such as industrial automation, robotics and power tools.
3. **Electric Vehicle (EV) Charging Management**
Due to its high current capability of 90A and low on-resistance, the STB80NF03L-04-VB is an ideal choice for EV charging management systems. It can effectively control the battery charging and discharging process, reduce power loss and heat in the battery management system, and improve charging efficiency. It is suitable for battery management systems (BMS) and charging stations for electric vehicles.
4. **Battery Management System (BMS)**
In the battery management system (BMS), the STB80NF03L-04-VB provides efficient power switching functions, which can stably control the charging and discharging process of the battery pack. The low on-resistance and high current capability make it particularly suitable for high-efficiency battery management systems, which are widely used in energy storage systems, consumer electronic devices and power tools.
5. **Power Converters and Inverters**
The STB80NF03L-04-VB is also widely used in power electronic systems, especially in inverters and power converters. Its 30V drain-source voltage and 90A high current capability make it suitable for low voltage and high current applications such as solar inverters, UPS power systems, and other high-efficiency power conversion equipment.
6. **Radio Frequency (RF) Power Amplifier**
STB80NF03L-04-VB also excels in RF power amplifiers, where its low RDS(ON) and high efficiency characteristics enable it to provide stable power output in high-frequency applications. It is commonly used in communications equipment and test equipment, especially in systems that require fast switching and high power transmission.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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