中文
English
STB80NF03L-04TT4-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**STB80NF03L-04TT4-VB** is a single N-channel MOSFET in a TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 98A. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)). At VGS=10V, RDS(ON) is 2.4mΩ, which can significantly reduce power loss and improve switching efficiency. It is designed for high-efficiency power management applications, especially for high current power conversion, motor drive and other applications requiring low on-resistance. This MOSFET performs well in the automotive, communications, industrial power control and other fields.
---
**STB80NF03L-04TT4-VB** is a single N-channel MOSFET in a TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 98A. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)). At VGS=10V, RDS(ON) is 2.4mΩ, which can significantly reduce power loss and improve switching efficiency. It is designed for high-efficiency power management applications, especially for high current power conversion, motor drive and other applications requiring low on-resistance. This MOSFET performs well in the automotive, communications, industrial power control and other fields.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------------------|---------------------------------------------------------------------------|
| **Package Type** | TO263 | The TO263 package is suitable for high current and medium to high power applications and has good heat dissipation performance. |
| **Configuration** | Single N-channel | The single N-channel configuration is suitable for various power management and motor control applications. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, which is suitable for low-voltage power supply and drive circuit control. |
| **Gate-Source Voltage (VGS)** | ±20V | The gate-source voltage range is ±20V, which is suitable for common power control systems. |
| **Threshold Voltage (Vth)** | 1.7V | The low threshold voltage (1.7V) is suitable for working at lower voltages and optimizing switching performance. |
| **On-resistance (RDS(ON))** | 2.4mΩ (@VGS=10V) | At a gate voltage of 10V, the on-resistance is 2.4mΩ, providing low power loss and improving system efficiency. |
| **Drain current (ID)** | 98A | Maximum drain current is 98A, suitable for power control applications with high current loads. |
| **Technology** | Trench | Trench technology optimizes the on-resistance and switching performance of the MOSFET, suitable for high-efficiency power electronic systems. |
---
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------------------|---------------------------------------------------------------------------|
| **Package Type** | TO263 | The TO263 package is suitable for high current and medium to high power applications and has good heat dissipation performance. |
| **Configuration** | Single N-channel | The single N-channel configuration is suitable for various power management and motor control applications. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, which is suitable for low-voltage power supply and drive circuit control. |
| **Gate-Source Voltage (VGS)** | ±20V | The gate-source voltage range is ±20V, which is suitable for common power control systems. |
| **Threshold Voltage (Vth)** | 1.7V | The low threshold voltage (1.7V) is suitable for working at lower voltages and optimizing switching performance. |
| **On-resistance (RDS(ON))** | 2.4mΩ (@VGS=10V) | At a gate voltage of 10V, the on-resistance is 2.4mΩ, providing low power loss and improving system efficiency. |
| **Drain current (ID)** | 98A | Maximum drain current is 98A, suitable for power control applications with high current loads. |
| **Technology** | Trench | Trench technology optimizes the on-resistance and switching performance of the MOSFET, suitable for high-efficiency power electronic systems. |
---
Domain and module applications：
Application fields and module examples
1. **High-efficiency power management (Power Management Systems)**
**STB80NF03L-04TT4-VB** is suitable for high-current applications in power management systems, such as DC-DC converters, AC-DC power supplies, power factor correction circuits (PFC), etc. Its low on-resistance and high current carrying capacity can ensure the high efficiency and stability of the power system, and is suitable for power conversion and regulation of various industrial and consumer electronic products.
2. **Motor drive (Motor Drive Systems)**
In motor control applications, especially those requiring high-current, low-loss switches, **STB80NF03L-04TT4-VB** can effectively control the start and stop and speed regulation of motors as a switching element, and is widely used in household appliances, power tools, robots, and industrial automation equipment. Its high current handling capability and low on-resistance help improve the energy efficiency and response speed of the system.
3. **Automotive Electronics**
Due to its low on-resistance and high current carrying capacity, **STB80NF03L-04TT4-VB** is particularly suitable for power switch applications in automotive electronic systems, especially in electric vehicle (EV) battery management, drive circuits and power modules. It can ensure efficient power conversion, low temperature rise operation, and adapt to the high reliability and efficiency requirements of automotive electrical systems.
4. **Communication Equipment**
In the power supply system of communication equipment, **STB80NF03L-04TT4-VB** is widely used in high-efficiency power conversion modules, such as base station power supplies, optical network equipment and server power supplies. The MOSFET can provide low power loss and high current handling capability, suitable for communication systems with high requirements for stability and efficiency.
5. **LED Driver Systems**
Due to its low on-resistance and fast switching capability, **STB80NF03L-04TT4-VB** is suitable for the power switch part of LED lighting control systems. It can improve the efficiency of LED driver systems and reduce energy losses in the system, and is widely used in high-efficiency lighting and smart home control systems.
6. **Battery Management Systems**
In battery management systems (BMS), **STB80NF03L-04TT4-VB** provides efficient power switches, especially for battery charge and discharge control in electric vehicles (EV) and energy storage systems. Due to its low on-resistance, it can reduce power loss during charging and discharging, and improve battery efficiency and life.
---
1. **High-efficiency power management (Power Management Systems)**
**STB80NF03L-04TT4-VB** is suitable for high-current applications in power management systems, such as DC-DC converters, AC-DC power supplies, power factor correction circuits (PFC), etc. Its low on-resistance and high current carrying capacity can ensure the high efficiency and stability of the power system, and is suitable for power conversion and regulation of various industrial and consumer electronic products.
2. **Motor drive (Motor Drive Systems)**
In motor control applications, especially those requiring high-current, low-loss switches, **STB80NF03L-04TT4-VB** can effectively control the start and stop and speed regulation of motors as a switching element, and is widely used in household appliances, power tools, robots, and industrial automation equipment. Its high current handling capability and low on-resistance help improve the energy efficiency and response speed of the system.
3. **Automotive Electronics**
Due to its low on-resistance and high current carrying capacity, **STB80NF03L-04TT4-VB** is particularly suitable for power switch applications in automotive electronic systems, especially in electric vehicle (EV) battery management, drive circuits and power modules. It can ensure efficient power conversion, low temperature rise operation, and adapt to the high reliability and efficiency requirements of automotive electrical systems.
4. **Communication Equipment**
In the power supply system of communication equipment, **STB80NF03L-04TT4-VB** is widely used in high-efficiency power conversion modules, such as base station power supplies, optical network equipment and server power supplies. The MOSFET can provide low power loss and high current handling capability, suitable for communication systems with high requirements for stability and efficiency.
5. **LED Driver Systems**
Due to its low on-resistance and fast switching capability, **STB80NF03L-04TT4-VB** is suitable for the power switch part of LED lighting control systems. It can improve the efficiency of LED driver systems and reduce energy losses in the system, and is widely used in high-efficiency lighting and smart home control systems.
6. **Battery Management Systems**
In battery management systems (BMS), **STB80NF03L-04TT4-VB** provides efficient power switches, especially for battery charge and discharge control in electric vehicles (EV) and energy storage systems. Due to its low on-resistance, it can reduce power loss during charging and discharging, and improve battery efficiency and life.
---
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
