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STB80NE06-10-TR-VB Product details
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Product Introduction
**STB80NE06-10-TR-VB** is a single-channel N-type MOSFET in **TO263** package, designed for high current and low on-resistance applications. Its maximum drain-source voltage is **60V** and its maximum drain current is **150A**, which is suitable for high-efficiency power management systems, especially those that require high current and low power loss. This MOSFET adopts **Trench technology** and has extremely low on-resistance (**RDS(ON) = 4mΩ** at **VGS = 10V**), which can significantly improve system efficiency and reduce heat loss in high-frequency switching applications.
**STB80NE06-10-TR-VB** has a threshold voltage **Vth = 3V**, which can be turned on at a lower gate-source voltage, optimizing the switching speed and is suitable for a variety of electronic circuits that require fast switching. Its design enables it to provide excellent performance in a variety of medium and low voltage power conversion and drive systems, suitable for high-efficiency, high-power modern electronic applications.
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**STB80NE06-10-TR-VB** is a single-channel N-type MOSFET in **TO263** package, designed for high current and low on-resistance applications. Its maximum drain-source voltage is **60V** and its maximum drain current is **150A**, which is suitable for high-efficiency power management systems, especially those that require high current and low power loss. This MOSFET adopts **Trench technology** and has extremely low on-resistance (**RDS(ON) = 4mΩ** at **VGS = 10V**), which can significantly improve system efficiency and reduce heat loss in high-frequency switching applications.
**STB80NE06-10-TR-VB** has a threshold voltage **Vth = 3V**, which can be turned on at a lower gate-source voltage, optimizing the switching speed and is suitable for a variety of electronic circuits that require fast switching. Its design enables it to provide excellent performance in a variety of medium and low voltage power conversion and drive systems, suitable for high-efficiency, high-power modern electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|-----------------------|---------------------|-------------|--------------------------------------------------------------|
| **Package type** | TO263 | - | Surface mount package, suitable for high power applications, providing excellent heat dissipation performance. |
| **Configuration** | Single channel N type | - | Suitable for high-performance switching applications, providing low on-resistance and high current carrying capacity. |
| **Maximum drain-source voltage (VDS)** | 60V | V | The maximum drain-source voltage is 60V, suitable for low-voltage switching power supplies and drive systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for a variety of control circuits. |
| **Threshold voltage (Vth)** | 3V | V | A lower threshold voltage helps to increase the switching speed of the system and optimize efficiency. |
| **On-resistance (RDS(ON))** | 4mΩ (@VGS=10V) | mΩ | Very low on-resistance at 10V gate-source voltage, reducing power loss and improving efficiency. |
| **Maximum drain current (ID)** | 150A | A | High current carrying capability for high current power conversion applications. |
| **Technology type** | Trench | - | Using Trench technology, providing lower on-resistance and higher switching efficiency. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|-----------------------|---------------------|-------------|--------------------------------------------------------------|
| **Package type** | TO263 | - | Surface mount package, suitable for high power applications, providing excellent heat dissipation performance. |
| **Configuration** | Single channel N type | - | Suitable for high-performance switching applications, providing low on-resistance and high current carrying capacity. |
| **Maximum drain-source voltage (VDS)** | 60V | V | The maximum drain-source voltage is 60V, suitable for low-voltage switching power supplies and drive systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for a variety of control circuits. |
| **Threshold voltage (Vth)** | 3V | V | A lower threshold voltage helps to increase the switching speed of the system and optimize efficiency. |
| **On-resistance (RDS(ON))** | 4mΩ (@VGS=10V) | mΩ | Very low on-resistance at 10V gate-source voltage, reducing power loss and improving efficiency. |
| **Maximum drain current (ID)** | 150A | A | High current carrying capability for high current power conversion applications. |
| **Technology type** | Trench | - | Using Trench technology, providing lower on-resistance and higher switching efficiency. |
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Domain and module applications：
Applications and module examples
1. **Switching Power Supplies**
**STB80NE06-10-TR-VB** is very suitable for switching power supply systems, especially in **DC-DC converters** and **AC-DC power supplies**. Its low on-resistance (**4mΩ**) and high current carrying capacity (**150A**) enable it to significantly improve power supply efficiency and reduce power losses, especially for scenarios requiring high-efficiency, high-frequency switching. Whether it is a computer power supply, a telecommunications equipment power supply, or an industrial power supply, **STB80NE06-10-TR-VB** can provide excellent power conversion efficiency.
2. **Motor Drives**
This MOSFET is very suitable for **motor drive systems**, such as DC motor drives. In power tools, electric vehicles, home appliances, and automation equipment, **STB80NE06-10-TR-VB** can provide high current carrying capacity and low power loss, thereby ensuring efficient and stable operation of the motor. Due to its low on-resistance and high current capacity, it can effectively drive high-power motors and reduce power losses in motor drive circuits.
3. **Battery Management Systems (BMS)**
**STB80NE06-10-TR-VB** is suitable for battery management systems, especially battery management modules in **electric vehicles (EVs)** and **energy storage systems**. MOSFET has high current carrying capacity and fast response capabilities, and current control is crucial during battery charging and discharging. It can efficiently control the battery charging and discharging process, extend battery life, and ensure safe operation of battery packs.
4. **LED Drivers**
In **LED driver systems**, **STB80NE06-10-TR-VB** can be used to efficiently drive high-power LEDs. Due to its low on-resistance, it can reduce power loss in the system and improve energy efficiency, thereby achieving a more stable and efficient LED lighting solution. It can provide excellent performance in both industrial and commercial lighting applications.
5. **Automotive Electronics**
This MOSFET is also widely used in **automotive electronic systems**, especially in power management systems, on-board chargers and motor drives. Due to **STB80NE06-10-TR-VB**'s low power loss, high current carrying capacity and stable and efficient switching characteristics, it can effectively control current in automotive electrical systems and ensure stable system operation, and is widely used in electric vehicles, hybrid vehicles and on-board chargers.
6. **Smart Grids**
**STB80NE06-10-TR-VB** is suitable for power conversion and distribution modules in **Smart Grid**, which can help manage and optimize the flow of power in the power grid. Its high efficiency and low loss enable it to provide higher overall efficiency in power conversion and ensure the stable operation of the power grid system, especially in situations where high current and high switching speed are required.
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**STB80NE06-10-TR-VB** is a high-performance MOSFET suitable for multiple fields such as switching power supplies, motor drives, LED drives, battery management systems, automotive electronics and smart grids. Its low on-resistance, high current carrying capacity and high switching efficiency enable it to perform well in applications that require high current and high efficiency.
1. **Switching Power Supplies**
**STB80NE06-10-TR-VB** is very suitable for switching power supply systems, especially in **DC-DC converters** and **AC-DC power supplies**. Its low on-resistance (**4mΩ**) and high current carrying capacity (**150A**) enable it to significantly improve power supply efficiency and reduce power losses, especially for scenarios requiring high-efficiency, high-frequency switching. Whether it is a computer power supply, a telecommunications equipment power supply, or an industrial power supply, **STB80NE06-10-TR-VB** can provide excellent power conversion efficiency.
2. **Motor Drives**
This MOSFET is very suitable for **motor drive systems**, such as DC motor drives. In power tools, electric vehicles, home appliances, and automation equipment, **STB80NE06-10-TR-VB** can provide high current carrying capacity and low power loss, thereby ensuring efficient and stable operation of the motor. Due to its low on-resistance and high current capacity, it can effectively drive high-power motors and reduce power losses in motor drive circuits.
3. **Battery Management Systems (BMS)**
**STB80NE06-10-TR-VB** is suitable for battery management systems, especially battery management modules in **electric vehicles (EVs)** and **energy storage systems**. MOSFET has high current carrying capacity and fast response capabilities, and current control is crucial during battery charging and discharging. It can efficiently control the battery charging and discharging process, extend battery life, and ensure safe operation of battery packs.
4. **LED Drivers**
In **LED driver systems**, **STB80NE06-10-TR-VB** can be used to efficiently drive high-power LEDs. Due to its low on-resistance, it can reduce power loss in the system and improve energy efficiency, thereby achieving a more stable and efficient LED lighting solution. It can provide excellent performance in both industrial and commercial lighting applications.
5. **Automotive Electronics**
This MOSFET is also widely used in **automotive electronic systems**, especially in power management systems, on-board chargers and motor drives. Due to **STB80NE06-10-TR-VB**'s low power loss, high current carrying capacity and stable and efficient switching characteristics, it can effectively control current in automotive electrical systems and ensure stable system operation, and is widely used in electric vehicles, hybrid vehicles and on-board chargers.
6. **Smart Grids**
**STB80NE06-10-TR-VB** is suitable for power conversion and distribution modules in **Smart Grid**, which can help manage and optimize the flow of power in the power grid. Its high efficiency and low loss enable it to provide higher overall efficiency in power conversion and ensure the stable operation of the power grid system, especially in situations where high current and high switching speed are required.
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**STB80NE06-10-TR-VB** is a high-performance MOSFET suitable for multiple fields such as switching power supplies, motor drives, LED drives, battery management systems, automotive electronics and smart grids. Its low on-resistance, high current carrying capacity and high switching efficiency enable it to perform well in applications that require high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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