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STB76NF75-VB Product details
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STB76NF75-VB Product Introduction
**STB76NF75-VB** is a single N-channel power MOSFET using **Trench** technology, package type **TO263**, suitable for high-efficiency power switching applications. It has a maximum drain-source voltage (VDS) of 80V and a maximum drain current (ID) of 120A, supporting high current and low conduction loss. The on-resistance of this MOSFET is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, making it excellent in high-efficiency power conversion, battery management and electric drive systems. The STB76NF75-VB has extremely low switching losses, low heat generation and high voltage resistance, making it an ideal power switching element, especially suitable for use in high-efficiency power systems.
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**STB76NF75-VB** is a single N-channel power MOSFET using **Trench** technology, package type **TO263**, suitable for high-efficiency power switching applications. It has a maximum drain-source voltage (VDS) of 80V and a maximum drain current (ID) of 120A, supporting high current and low conduction loss. The on-resistance of this MOSFET is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, making it excellent in high-efficiency power conversion, battery management and electric drive systems. The STB76NF75-VB has extremely low switching losses, low heat generation and high voltage resistance, making it an ideal power switching element, especially suitable for use in high-efficiency power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
STB76NF75-VB parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, providing excellent thermal performance and mechanical strength, suitable for high power applications. |
| **Configuration** | Single N-channel | Provides efficient current control and low conduction loss, suitable for high power switching and power management. |
| **Drain-Source Voltage (VDS)** | 80V | The maximum drain-source voltage is 80V, suitable for power switching applications in the medium voltage range. |
| **Gate-Source Voltage (VGS)** | ±20V | The maximum gate-source voltage is ±20V, supporting a wide gate drive range. |
| **Turn-On Threshold Voltage (Vth)** | 3V | The turn-on threshold voltage is 3V, ensuring that the MOSFET is stably turned on at the appropriate voltage. |
| **On-resistance (RDS(ON))** | 10mΩ @ VGS=4.5V | Very low on-resistance at 4.5V gate drive, ensuring low power loss. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=10V | At 10V gate drive, on-resistance is further reduced, improving power conversion efficiency. |
| **Maximum drain current (ID)** | 120A | Maximum drain current is 120A, suitable for applications with high current loads. |
| **Technology type** | Trench | Using trench technology, it has low on-resistance and excellent switching performance, suitable for efficient power conversion. |
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| **Parameter** | **Value** | **Description** |
|----------------------|--------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, providing excellent thermal performance and mechanical strength, suitable for high power applications. |
| **Configuration** | Single N-channel | Provides efficient current control and low conduction loss, suitable for high power switching and power management. |
| **Drain-Source Voltage (VDS)** | 80V | The maximum drain-source voltage is 80V, suitable for power switching applications in the medium voltage range. |
| **Gate-Source Voltage (VGS)** | ±20V | The maximum gate-source voltage is ±20V, supporting a wide gate drive range. |
| **Turn-On Threshold Voltage (Vth)** | 3V | The turn-on threshold voltage is 3V, ensuring that the MOSFET is stably turned on at the appropriate voltage. |
| **On-resistance (RDS(ON))** | 10mΩ @ VGS=4.5V | Very low on-resistance at 4.5V gate drive, ensuring low power loss. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=10V | At 10V gate drive, on-resistance is further reduced, improving power conversion efficiency. |
| **Maximum drain current (ID)** | 120A | Maximum drain current is 120A, suitable for applications with high current loads. |
| **Technology type** | Trench | Using trench technology, it has low on-resistance and excellent switching performance, suitable for efficient power conversion. |
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Domain and module applications：
STB76NF75-VB Application Fields and Modules
#### 1. **Switching Power Supply (SMPS)**
**Application Scenario:** In the switching power supply, STB76NF75-VB is used as a power switching element to help achieve efficient power conversion and voltage regulation control.
**Features and Advantages:** Its low on-resistance (6mΩ @ VGS = 10V) significantly reduces the energy loss in the power conversion process, and is suitable for computer power supply, communication power supply and other fields, ensuring high efficiency and low temperature operation of the power supply system.
#### 2. **Power Tools**
**Application Scenario:** In power tools, STB76NF75-VB is used in motor drive circuits to provide efficient current control.
**Features and Advantages:** The high drain current (120A) and low on-resistance of MOSFET enable it to stably drive the motor in the power tool, reduce heat generation and improve system efficiency.
#### 3. **Battery Management System (BMS)**
**Application scenarios:** In battery management systems, STB76NF75-VB is used to control the charging and discharging process of the battery, which is widely used in electric vehicles (EV) and energy storage systems.
**Features and advantages:** Due to its low on-resistance and high current carrying capacity, STB76NF75-VB can ensure high efficiency of the battery during charging and discharging and extend battery life.
#### 4. **DC-DC Converter**
**Application scenarios:** STB76NF75-VB is used as a switching element in a DC-DC converter to help achieve voltage conversion and current regulation.
**Features and advantages:** The low on-resistance of the MOSFET (6mΩ @ VGS = 10V) ensures that losses can be reduced during high-power conversion and improves system efficiency. It is suitable for high-efficiency power supply applications such as LED drivers and solar inverters.
#### 5. **Automotive Electronic Systems**
**Application Scenarios:** In automotive electronic systems, STB76NF75-VB is used for power conversion, motor drive, and battery management.
**Features and Advantages:** MOSFET is suitable for battery management systems of electric vehicles (EV) and hybrid electric vehicles (HEV), providing efficient power conversion and supporting complex power requirements in automobiles.
#### 6. **Industrial Power Systems**
**Application Scenarios:** As a switching element in industrial power systems, STB76NF75-VB is widely used in power control and power conversion.
**Features and Advantages:** MOSFET's low on-resistance and high current carrying capacity enable it to operate efficiently in industrial automation, power control, and other high-power devices, ensuring stability and efficiency.
#### 7. **Consumer Electronics**
**Application Scenarios:** In consumer electronics, STB76NF75-VB is used for high-efficiency power management and battery drive systems.
**Features and advantages:** Its low on-resistance and high drain current make it suitable for power management systems in mobile phones, laptops and other devices, extending battery life and improving the overall energy efficiency of the device.
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**STB76NF75-VB** is a single N-channel MOSFET with high performance, high current carrying capacity and low on-resistance, which is very suitable for high-power applications. Its application in switching power supplies, battery management, DC-DC converters and automotive electronic systems demonstrates its excellent efficiency and reliability, providing an ideal solution for a variety of high-efficiency power systems.
#### 1. **Switching Power Supply (SMPS)**
**Application Scenario:** In the switching power supply, STB76NF75-VB is used as a power switching element to help achieve efficient power conversion and voltage regulation control.
**Features and Advantages:** Its low on-resistance (6mΩ @ VGS = 10V) significantly reduces the energy loss in the power conversion process, and is suitable for computer power supply, communication power supply and other fields, ensuring high efficiency and low temperature operation of the power supply system.
#### 2. **Power Tools**
**Application Scenario:** In power tools, STB76NF75-VB is used in motor drive circuits to provide efficient current control.
**Features and Advantages:** The high drain current (120A) and low on-resistance of MOSFET enable it to stably drive the motor in the power tool, reduce heat generation and improve system efficiency.
#### 3. **Battery Management System (BMS)**
**Application scenarios:** In battery management systems, STB76NF75-VB is used to control the charging and discharging process of the battery, which is widely used in electric vehicles (EV) and energy storage systems.
**Features and advantages:** Due to its low on-resistance and high current carrying capacity, STB76NF75-VB can ensure high efficiency of the battery during charging and discharging and extend battery life.
#### 4. **DC-DC Converter**
**Application scenarios:** STB76NF75-VB is used as a switching element in a DC-DC converter to help achieve voltage conversion and current regulation.
**Features and advantages:** The low on-resistance of the MOSFET (6mΩ @ VGS = 10V) ensures that losses can be reduced during high-power conversion and improves system efficiency. It is suitable for high-efficiency power supply applications such as LED drivers and solar inverters.
#### 5. **Automotive Electronic Systems**
**Application Scenarios:** In automotive electronic systems, STB76NF75-VB is used for power conversion, motor drive, and battery management.
**Features and Advantages:** MOSFET is suitable for battery management systems of electric vehicles (EV) and hybrid electric vehicles (HEV), providing efficient power conversion and supporting complex power requirements in automobiles.
#### 6. **Industrial Power Systems**
**Application Scenarios:** As a switching element in industrial power systems, STB76NF75-VB is widely used in power control and power conversion.
**Features and Advantages:** MOSFET's low on-resistance and high current carrying capacity enable it to operate efficiently in industrial automation, power control, and other high-power devices, ensuring stability and efficiency.
#### 7. **Consumer Electronics**
**Application Scenarios:** In consumer electronics, STB76NF75-VB is used for high-efficiency power management and battery drive systems.
**Features and advantages:** Its low on-resistance and high drain current make it suitable for power management systems in mobile phones, laptops and other devices, extending battery life and improving the overall energy efficiency of the device.
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**STB76NF75-VB** is a single N-channel MOSFET with high performance, high current carrying capacity and low on-resistance, which is very suitable for high-power applications. Its application in switching power supplies, battery management, DC-DC converters and automotive electronic systems demonstrates its excellent efficiency and reliability, providing an ideal solution for a variety of high-efficiency power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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