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STB75NF75LT4-VB Product details
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Product Introduction
STB75NF75LT4-VB is a high-performance N-channel MOSFET in TO263 package, designed for high-efficiency power switching applications. Its maximum drain-source voltage (VDS) is 80V and its maximum drain current (ID) is 120A, which is suitable for medium and high power power conversion and control. This MOSFET adopts Trench technology and has an ultra-low on-resistance (RDS(ON)) - 6mΩ at VGS=10V and 10mΩ at VGS=4.5V. Its low on-resistance and excellent switching characteristics make it perform well in many high-efficiency power management systems, especially suitable for high-frequency and high-current applications.
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STB75NF75LT4-VB is a high-performance N-channel MOSFET in TO263 package, designed for high-efficiency power switching applications. Its maximum drain-source voltage (VDS) is 80V and its maximum drain current (ID) is 120A, which is suitable for medium and high power power conversion and control. This MOSFET adopts Trench technology and has an ultra-low on-resistance (RDS(ON)) - 6mΩ at VGS=10V and 10mΩ at VGS=4.5V. Its low on-resistance and excellent switching characteristics make it perform well in many high-efficiency power management systems, especially suitable for high-frequency and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Specification** | **Description** |
|-----------------|--------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides good heat dissipation and is suitable for high power and high current applications. |
| **Channel Configuration** | Single N-Channel | The single N-Channel configuration provides excellent switching control and reduces conduction losses. |
| **VDS** | 80V | The maximum drain-source voltage is 80V, suitable for medium and low voltage applications. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, suitable for common power supply control voltage ranges. |
| **Vth** | 3V | The startup voltage is 3V, ensuring low voltage startup. |
| **RDS(ON)** | 10mΩ@VGS=4.5V, 6mΩ@VGS=10V | The on-resistance is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, providing extremely low conduction losses. |
| **ID** | 120A | The maximum drain current is 120A, suitable for high current load applications. |
| **Technology** | Trench | Trench technology provides excellent switching speed and low on-resistance, effectively improving efficiency. |
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| **Parameter** | **Specification** | **Description** |
|-----------------|--------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides good heat dissipation and is suitable for high power and high current applications. |
| **Channel Configuration** | Single N-Channel | The single N-Channel configuration provides excellent switching control and reduces conduction losses. |
| **VDS** | 80V | The maximum drain-source voltage is 80V, suitable for medium and low voltage applications. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, suitable for common power supply control voltage ranges. |
| **Vth** | 3V | The startup voltage is 3V, ensuring low voltage startup. |
| **RDS(ON)** | 10mΩ@VGS=4.5V, 6mΩ@VGS=10V | The on-resistance is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, providing extremely low conduction losses. |
| **ID** | 120A | The maximum drain current is 120A, suitable for high current load applications. |
| **Technology** | Trench | Trench technology provides excellent switching speed and low on-resistance, effectively improving efficiency. |
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Domain and module applications：
Application fields and module examples
1. **High-efficiency switching power supply (SMPS)**
STB75NF75LT4-VB is widely used in high-efficiency switching power supplies (SMPS), especially in applications requiring low conduction losses and high current capabilities. Its ultra-low RDS(ON) and high current capabilities make it very suitable for high-efficiency DC-DC converters, AC-DC power supplies, and fast switching power supply modules. Its 120A drain current and low loss characteristics ensure high efficiency and low heat generation in the system, making it suitable for applications such as server power supplies and LED driver power supplies.
2. **Motor control system**
In motor drive systems, STB75NF75LT4-VB is an ideal choice. It can efficiently control the current flowing into the motor, especially in high-power, high-current requirements. Due to its very low on-resistance, this MOSFET has extremely low power losses in motor control, making the drive system more energy-efficient and efficient. It is widely used in industrial motor drive, robot control, motor control of HVAC systems and other fields.
3. **Electric Vehicle (EV) Power System**
In the battery management and drive system of electric vehicles (EV), STB75NF75LT4-VB is used as a power switch element to efficiently manage the battery charging and discharging process. Its high withstand voltage of 80V and high current handling capacity of 120A make it an ideal choice for electric vehicle drive systems and charging modules. The low RDS(ON) of MOSFET ensures higher power conversion efficiency and longer battery life.
4. **Power Electronic Module**
STB75NF75LT4-VB is also suitable for various power electronic modules such as inverters, rectifiers and power amplifiers. These modules require high efficiency, fast switching and low loss power switch elements, and this MOSFET provides these characteristics. Its 80V drain-source voltage makes it suitable for power electronic controllers, solar inverters and industrial power systems.
5. **Battery Management System (BMS)**
In the battery management system (BMS), the STB75NF75LT4-VB can effectively control the charging and discharging process of the battery pack, especially in applications with high current and high efficiency requirements. This MOSFET provides low loss and low heat performance during high current charging and discharging, thereby helping to improve the life and efficiency of the battery, and is suitable for power tools, mobile devices and energy storage systems.
6. **High-frequency power conversion**
Due to its ultra-low RDS(ON) and high current capability, the STB75NF75LT4-VB is also suitable for high-frequency power conversion applications such as RF power amplifiers and high-frequency DC power supplies. Its fast switching characteristics make it ideal for high-frequency and high-power conversion applications, especially in power amplifiers, communication equipment and test equipment.
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1. **High-efficiency switching power supply (SMPS)**
STB75NF75LT4-VB is widely used in high-efficiency switching power supplies (SMPS), especially in applications requiring low conduction losses and high current capabilities. Its ultra-low RDS(ON) and high current capabilities make it very suitable for high-efficiency DC-DC converters, AC-DC power supplies, and fast switching power supply modules. Its 120A drain current and low loss characteristics ensure high efficiency and low heat generation in the system, making it suitable for applications such as server power supplies and LED driver power supplies.
2. **Motor control system**
In motor drive systems, STB75NF75LT4-VB is an ideal choice. It can efficiently control the current flowing into the motor, especially in high-power, high-current requirements. Due to its very low on-resistance, this MOSFET has extremely low power losses in motor control, making the drive system more energy-efficient and efficient. It is widely used in industrial motor drive, robot control, motor control of HVAC systems and other fields.
3. **Electric Vehicle (EV) Power System**
In the battery management and drive system of electric vehicles (EV), STB75NF75LT4-VB is used as a power switch element to efficiently manage the battery charging and discharging process. Its high withstand voltage of 80V and high current handling capacity of 120A make it an ideal choice for electric vehicle drive systems and charging modules. The low RDS(ON) of MOSFET ensures higher power conversion efficiency and longer battery life.
4. **Power Electronic Module**
STB75NF75LT4-VB is also suitable for various power electronic modules such as inverters, rectifiers and power amplifiers. These modules require high efficiency, fast switching and low loss power switch elements, and this MOSFET provides these characteristics. Its 80V drain-source voltage makes it suitable for power electronic controllers, solar inverters and industrial power systems.
5. **Battery Management System (BMS)**
In the battery management system (BMS), the STB75NF75LT4-VB can effectively control the charging and discharging process of the battery pack, especially in applications with high current and high efficiency requirements. This MOSFET provides low loss and low heat performance during high current charging and discharging, thereby helping to improve the life and efficiency of the battery, and is suitable for power tools, mobile devices and energy storage systems.
6. **High-frequency power conversion**
Due to its ultra-low RDS(ON) and high current capability, the STB75NF75LT4-VB is also suitable for high-frequency power conversion applications such as RF power amplifiers and high-frequency DC power supplies. Its fast switching characteristics make it ideal for high-frequency and high-power conversion applications, especially in power amplifiers, communication equipment and test equipment.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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