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STB6NK90ZT4-VB Product details
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Product Introduction
The STB6NK90ZT4-VB is a high-voltage single N-channel MOSFET in a TO263 package, suitable for applications requiring high voltage and medium current handling. Its maximum drain-source voltage (VDS) is 900V, it can withstand a drain current (ID) of up to 7A, and has an on-resistance (RDS(ON)) of 950mΩ at VGS=10V. This MOSFET uses SJ_Multi-EPI technology to optimize power conversion efficiency and switching characteristics, and is suitable for occasions requiring effective power control in high-voltage applications. With its high voltage resistance and low power consumption, the STB6NK90ZT4-VB has a wide range of applications in industrial equipment, switching power supplies, inverters and other fields.
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The STB6NK90ZT4-VB is a high-voltage single N-channel MOSFET in a TO263 package, suitable for applications requiring high voltage and medium current handling. Its maximum drain-source voltage (VDS) is 900V, it can withstand a drain current (ID) of up to 7A, and has an on-resistance (RDS(ON)) of 950mΩ at VGS=10V. This MOSFET uses SJ_Multi-EPI technology to optimize power conversion efficiency and switching characteristics, and is suitable for occasions requiring effective power control in high-voltage applications. With its high voltage resistance and low power consumption, the STB6NK90ZT4-VB has a wide range of applications in industrial equipment, switching power supplies, inverters and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Specification** | **Description** |
|-----------------|--------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides good heat dissipation and is suitable for high-power and high-voltage applications. |
| **Channel Configuration** | Single N-Channel | The N-Channel configuration is suitable for efficient switch control, with low on-resistance and good switching performance. |
| **VDS** | 900V | The maximum drain-source voltage is 900V, suitable for high-voltage applications. |
| **VGS** | ±30V | The maximum gate-source voltage is ±30V, suitable for common power supply control voltage ranges. |
| **Vth** | 3.5V | The startup voltage is 3.5V, ensuring that the device can start up at a lower voltage. |
| **RDS(ON)** | 950mΩ@VGS=10V | The on-resistance is 950mΩ at VGS=10V, indicating low power consumption and high efficiency switching characteristics. |
| **ID** | 7A | The maximum drain current is 7A, suitable for medium current loads and can withstand large currents. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology can effectively reduce on-resistance and improve switching speed and efficiency. |
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| **Parameter** | **Specification** | **Description** |
|-----------------|--------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides good heat dissipation and is suitable for high-power and high-voltage applications. |
| **Channel Configuration** | Single N-Channel | The N-Channel configuration is suitable for efficient switch control, with low on-resistance and good switching performance. |
| **VDS** | 900V | The maximum drain-source voltage is 900V, suitable for high-voltage applications. |
| **VGS** | ±30V | The maximum gate-source voltage is ±30V, suitable for common power supply control voltage ranges. |
| **Vth** | 3.5V | The startup voltage is 3.5V, ensuring that the device can start up at a lower voltage. |
| **RDS(ON)** | 950mΩ@VGS=10V | The on-resistance is 950mΩ at VGS=10V, indicating low power consumption and high efficiency switching characteristics. |
| **ID** | 7A | The maximum drain current is 7A, suitable for medium current loads and can withstand large currents. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology can effectively reduce on-resistance and improve switching speed and efficiency. |
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Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**
The STB6NK90ZT4-VB is an ideal MOSFET choice and is widely used in switching power supplies (SMPS), especially in high-voltage power converters. Due to its high withstand voltage (900V) and low on-resistance (950mΩ), the device is able to effectively control high voltage inputs and maintain high efficiency. It can be used in applications such as industrial power supplies, LED power supplies, and battery chargers.
2. **Inverter and Power Conversion**
In solar inverters and other power conversion modules, the STB6NK90ZT4-VB provides stable current control and efficient power conversion. Its high VDS and low RDS(ON) make it an ideal choice for high-efficiency, high-reliability power conversion systems. This MOSFET is suitable for converting DC power to AC power, especially in inverter applications that require high voltage and medium current.
3. **Motor drives and industrial equipment**
This MOSFET is suitable for various motor drive and industrial control applications, especially in motor controllers that require high voltage. The STB6NK90ZT4-VB can provide reliable switching performance in the speed control system of the motor, helping to improve the efficiency and power density of the drive system. Due to its high drain-source voltage of 900V, it is very suitable for motor control and robot control systems.
4. **Power electronic equipment**
In high-voltage power electronic equipment, the STB6NK90ZT4-VB can be used in equipment such as rectifiers, transformers and power amplifiers. Its excellent electrical performance and high-voltage withstand capability make it a core switching element in high-power power electronic equipment. It is widely used in power transmission, substation equipment, and power dispatching systems to help achieve efficient power conversion and control.
5. **High-voltage test equipment**
The STB6NK90ZT4-VB can also be used in high-voltage test equipment, such as power system testing and electrical test instruments. In these applications, the high voltage handling capability of MOSFET enables it to effectively simulate and test various high-voltage electrical equipment to ensure the safety and reliability of the system.
6. **Household appliances**
In some home appliances, STB6NK90ZT4-VB can also be used as a power switching element, especially in applications that require higher voltage and reliable control, such as power management modules for air conditioning systems and refrigerators. This MOSFET can provide efficient power scheduling while ensuring the stability and high performance of home appliances.
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1. **Switching Power Supply (SMPS)**
The STB6NK90ZT4-VB is an ideal MOSFET choice and is widely used in switching power supplies (SMPS), especially in high-voltage power converters. Due to its high withstand voltage (900V) and low on-resistance (950mΩ), the device is able to effectively control high voltage inputs and maintain high efficiency. It can be used in applications such as industrial power supplies, LED power supplies, and battery chargers.
2. **Inverter and Power Conversion**
In solar inverters and other power conversion modules, the STB6NK90ZT4-VB provides stable current control and efficient power conversion. Its high VDS and low RDS(ON) make it an ideal choice for high-efficiency, high-reliability power conversion systems. This MOSFET is suitable for converting DC power to AC power, especially in inverter applications that require high voltage and medium current.
3. **Motor drives and industrial equipment**
This MOSFET is suitable for various motor drive and industrial control applications, especially in motor controllers that require high voltage. The STB6NK90ZT4-VB can provide reliable switching performance in the speed control system of the motor, helping to improve the efficiency and power density of the drive system. Due to its high drain-source voltage of 900V, it is very suitable for motor control and robot control systems.
4. **Power electronic equipment**
In high-voltage power electronic equipment, the STB6NK90ZT4-VB can be used in equipment such as rectifiers, transformers and power amplifiers. Its excellent electrical performance and high-voltage withstand capability make it a core switching element in high-power power electronic equipment. It is widely used in power transmission, substation equipment, and power dispatching systems to help achieve efficient power conversion and control.
5. **High-voltage test equipment**
The STB6NK90ZT4-VB can also be used in high-voltage test equipment, such as power system testing and electrical test instruments. In these applications, the high voltage handling capability of MOSFET enables it to effectively simulate and test various high-voltage electrical equipment to ensure the safety and reliability of the system.
6. **Household appliances**
In some home appliances, STB6NK90ZT4-VB can also be used as a power switching element, especially in applications that require higher voltage and reliable control, such as power management modules for air conditioning systems and refrigerators. This MOSFET can provide efficient power scheduling while ensuring the stability and high performance of home appliances.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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