STB60NH02L-VB Product details
Product introduction:
**STB60NH02L-VB** is a single N-channel MOSFET in TO263 package, designed for high-efficiency power switching applications, with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 70A. This MOSFET uses Trench technology to provide ultra-low on-resistance (RDS(ON)), which is 6mΩ at VGS=10V and 8mΩ at VGS=4.5V, ensuring lower power loss. Its excellent switching performance and low on-resistance make it particularly suitable for applications requiring high efficiency, low power consumption and high current, especially in power management, motor drive, battery management and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | The TO263 package is suitable for high current and medium to high power applications, providing good heat dissipation performance. |
| **Configuration** | Single N-channel | The single N-channel configuration is suitable for various power management and motor control applications. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, suitable for low-voltage power management and control circuits. |
| **Gate-Source Voltage (VGS)** | ±20V | The gate-source voltage range is ±20V, suitable for common power control systems. |
| **Threshold Voltage (Vth)** | 1.7V | The lower threshold voltage ensures that the MOSFET can be enabled at a lower gate voltage, optimizing switching performance. |
| **On-resistance (RDS(ON))** | 8mΩ (@VGS=4.5V) | Maintains low on-resistance at lower gate voltage (VGS=4.5V) to reduce power loss. |
| | 6mΩ (@VGS=10V) | Provides lower on-resistance at standard gate voltage (VGS=10V) to further improve efficiency. |
| **Drain current (ID)** | 70A | Maximum drain current of 70A, suitable for high current power conversion applications. |
| **Technology** | Trench | Trench technology optimizes the on-resistance and switching characteristics of the MOSFET for high-efficiency power electronic systems. |
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Domain and module applications:
1. **Power Supply Systems**
**STB60NH02L-VB** is an ideal choice for efficient power management systems, especially for low-voltage DC-DC converters, battery chargers and power regulators. Its low on-resistance (6mΩ/8mΩ) can effectively reduce power loss and improve system efficiency, especially in applications requiring high efficiency and low power consumption.
2. **Motor Driver Systems**
In motor drive systems, **STB60NH02L-VB** provides fast switching performance and low on-resistance, making it perform well in motor control applications. It is particularly suitable for power tools, electric bicycles, electric toys and home appliances that require high current control, and can provide higher drive efficiency and reduce heat generation.
3. **Battery Management Systems**
Due to its low on-resistance and high current carrying capacity, **STB60NH02L-VB** plays an important role in battery management systems. It is suitable for use in battery charging and protection circuits, and can efficiently perform power conversion and current management to ensure the long life and safety of the battery. It is particularly suitable for electric vehicles (EV), portable devices and UPS systems.
4. **LED Drivers**
In LED driver power applications, **STB60NH02L-VB** can be used as a switching element to control the conduction of current. Due to its extremely low on-resistance, it can significantly reduce energy losses and is suitable for high-efficiency lighting systems. Its excellent switching performance ensures stable operation of LED lamps and improves light efficiency.
5. **Home Appliances and Consumer Electronics**
In home appliances and consumer electronics, especially high-power products such as air conditioners, rice cookers, washing machines, etc., **STB60NH02L-VB** as a power switch MOSFET can provide high-efficiency and high-reliability power conversion. Its low on-resistance makes electrical products more energy-efficient when running, reducing heat and power loss.
6. **High-Efficiency Power Conversion**
This MOSFET can be used in high-efficiency power conversion modules, especially in applications that require frequent switching and high current handling, such as data center power supplies, communication equipment, and industrial power systems. Its low RDS(ON) and high switching speed ensure efficient operation and lower power consumption of the system.
7. **Automotive Electronics**
**STB60NH02L-VB** is widely used in automotive electronics applications, especially in electric vehicles, hybrid electric vehicles (HEV) and battery management systems (BMS). It can provide efficient power conversion, drive and control, helping to improve the energy efficiency and reliability of automotive electronic systems, especially under high current loads.
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