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STB60NF10T4-VB Product details
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Product Introduction
**STB60NF10T4-VB** is a high-performance single-channel N-type MOSFET in a **TO263** package, specially designed for high voltage and high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is **100V**, which is very suitable for medium and high voltage power management, switching power supplies, and motor drive systems. Its maximum gate-source voltage (VGS) is **20V**, which can operate over a wide voltage range to ensure system stability and reliability.
The **threshold voltage (Vth)** of STB60NF10T4-VB is **1.8V**, which enables it to start at a lower gate voltage, thereby improving the response speed of the system. Its **on-resistance (RDS(ON))** is **20mΩ** at a gate voltage of **10V**, which means that the power loss during operation is lower, thereby improving the efficiency of the overall system. In addition, the **maximum drain current (ID)** of this MOSFET is **70A**, and it is very stable under high current conditions.
Using **Trench** technology, the STB60NF10T4-VB provides lower on-resistance and higher switching efficiency, making it an ideal choice for high-power applications.
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**STB60NF10T4-VB** is a high-performance single-channel N-type MOSFET in a **TO263** package, specially designed for high voltage and high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is **100V**, which is very suitable for medium and high voltage power management, switching power supplies, and motor drive systems. Its maximum gate-source voltage (VGS) is **20V**, which can operate over a wide voltage range to ensure system stability and reliability.
The **threshold voltage (Vth)** of STB60NF10T4-VB is **1.8V**, which enables it to start at a lower gate voltage, thereby improving the response speed of the system. Its **on-resistance (RDS(ON))** is **20mΩ** at a gate voltage of **10V**, which means that the power loss during operation is lower, thereby improving the efficiency of the overall system. In addition, the **maximum drain current (ID)** of this MOSFET is **70A**, and it is very stable under high current conditions.
Using **Trench** technology, the STB60NF10T4-VB provides lower on-resistance and higher switching efficiency, making it an ideal choice for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|-------------|------------------------------------------------------------|
| **Package Type** | TO263 | - | Surface mount package for high power applications, providing good heat dissipation. |
| **Configuration** | Single channel N-type | - | Designed for high efficiency switching, with low on-resistance and high current handling capability. |
| **Maximum drain-source voltage (VDS)** | 100V | V | The maximum drain-source voltage is 100V, suitable for switching applications in medium and high voltage systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for high efficiency control and drive systems. |
| **Threshold voltage (Vth)** | 1.8V | V | The lower threshold voltage enables the MOSFET to start up faster and improve efficiency. |
| **On-resistance (RDS(ON))** | 20mΩ (@VGS=10V) | mΩ | At a gate-source voltage of 10V, MOSFET exhibits lower on-resistance, reducing energy loss. |
| **Maximum drain current (ID)** | 70A | A | High current carrying capability, suitable for power conversion and drive applications with high power loads. |
| **Technology type** | Trench | - | Using Trench technology, it provides lower on-resistance, improving switching efficiency and power loss. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|-------------|------------------------------------------------------------|
| **Package Type** | TO263 | - | Surface mount package for high power applications, providing good heat dissipation. |
| **Configuration** | Single channel N-type | - | Designed for high efficiency switching, with low on-resistance and high current handling capability. |
| **Maximum drain-source voltage (VDS)** | 100V | V | The maximum drain-source voltage is 100V, suitable for switching applications in medium and high voltage systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for high efficiency control and drive systems. |
| **Threshold voltage (Vth)** | 1.8V | V | The lower threshold voltage enables the MOSFET to start up faster and improve efficiency. |
| **On-resistance (RDS(ON))** | 20mΩ (@VGS=10V) | mΩ | At a gate-source voltage of 10V, MOSFET exhibits lower on-resistance, reducing energy loss. |
| **Maximum drain current (ID)** | 70A | A | High current carrying capability, suitable for power conversion and drive applications with high power loads. |
| **Technology type** | Trench | - | Using Trench technology, it provides lower on-resistance, improving switching efficiency and power loss. |
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Domain and module applications：
Applications and module examples
1. **Switching Power Supplies**
**STB60NF10T4-VB** is very suitable for switching power supply modules, especially in **DC-DC converters** and **AC-DC power supplies**. Due to its low on-resistance and high current carrying capacity, it can significantly improve the conversion efficiency of the power supply and reduce the power loss of the system. In power-intensive applications, it can ensure long-term stable operation of the system, reduce heat and improve work efficiency.
2. **Motor Drives**
This MOSFET is an ideal choice for motor drive systems, especially in **DC motor drives** and **Brushless DC motor (BLDC)** control systems. It can withstand large currents during motor start, stop and operation, ensuring the stability and efficient operation of the motor. STB60NF10T4-VB is also widely used in power tools, electric bicycles and robot drive systems.
3. **Battery Management System (BMS)**
In the battery management system, **STB60NF10T4-VB** can effectively manage the battery charge and discharge due to its low on-resistance and high current carrying capacity. Especially suitable for **electric vehicles (EV)** and **hybrid battery systems**, it helps to improve battery charging efficiency, reduce power loss, and extend the battery life.
4. **LED drive and lighting system**
In LED drive applications, **STB60NF10T4-VB** can effectively control the large current flowing to the LED module, ensure constant current output, improve the light effect of LED lamps and extend their service life. It is particularly suitable for **commercial lighting** and **outdoor lighting** systems, and helps to improve the energy efficiency of the overall system.
5. **Solar Inverters**
In solar inverters, the STB60NF10T4-VB can be used as an efficient switching element to convert the DC power generated by solar cells into AC power. Its low on-resistance and low switching loss can improve the energy efficiency of the inverter, and is suitable for home and commercial solar power generation systems to ensure efficient power conversion.
6. **Power Management for Communication Equipment**
In equipment such as communication base stations and high-performance routers, the **STB60NF10T4-VB** can be used for power management to ensure system stability and efficient power conversion. It can effectively control current and reduce power loss in these devices, thereby improving the overall efficiency and reliability of communication equipment.
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**STB60NF10T4-VB** is widely used in switching power supplies, motor drives, battery management, LED drives, solar inverters, communication equipment power management and other fields due to its low on-resistance, high current carrying capacity and high efficiency switching characteristics. This MOSFET provides excellent performance and is suitable for various electronic systems with high requirements for power conversion and current control.
1. **Switching Power Supplies**
**STB60NF10T4-VB** is very suitable for switching power supply modules, especially in **DC-DC converters** and **AC-DC power supplies**. Due to its low on-resistance and high current carrying capacity, it can significantly improve the conversion efficiency of the power supply and reduce the power loss of the system. In power-intensive applications, it can ensure long-term stable operation of the system, reduce heat and improve work efficiency.
2. **Motor Drives**
This MOSFET is an ideal choice for motor drive systems, especially in **DC motor drives** and **Brushless DC motor (BLDC)** control systems. It can withstand large currents during motor start, stop and operation, ensuring the stability and efficient operation of the motor. STB60NF10T4-VB is also widely used in power tools, electric bicycles and robot drive systems.
3. **Battery Management System (BMS)**
In the battery management system, **STB60NF10T4-VB** can effectively manage the battery charge and discharge due to its low on-resistance and high current carrying capacity. Especially suitable for **electric vehicles (EV)** and **hybrid battery systems**, it helps to improve battery charging efficiency, reduce power loss, and extend the battery life.
4. **LED drive and lighting system**
In LED drive applications, **STB60NF10T4-VB** can effectively control the large current flowing to the LED module, ensure constant current output, improve the light effect of LED lamps and extend their service life. It is particularly suitable for **commercial lighting** and **outdoor lighting** systems, and helps to improve the energy efficiency of the overall system.
5. **Solar Inverters**
In solar inverters, the STB60NF10T4-VB can be used as an efficient switching element to convert the DC power generated by solar cells into AC power. Its low on-resistance and low switching loss can improve the energy efficiency of the inverter, and is suitable for home and commercial solar power generation systems to ensure efficient power conversion.
6. **Power Management for Communication Equipment**
In equipment such as communication base stations and high-performance routers, the **STB60NF10T4-VB** can be used for power management to ensure system stability and efficient power conversion. It can effectively control current and reduce power loss in these devices, thereby improving the overall efficiency and reliability of communication equipment.
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**STB60NF10T4-VB** is widely used in switching power supplies, motor drives, battery management, LED drives, solar inverters, communication equipment power management and other fields due to its low on-resistance, high current carrying capacity and high efficiency switching characteristics. This MOSFET provides excellent performance and is suitable for various electronic systems with high requirements for power conversion and current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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