STB60NF03L-TR-VB Product details
Product introduction:
STB60NF03L-TR-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. It has an operating range of maximum drain-source voltage (VDS) of 30V and maximum gate-source voltage (VGS) of ±20V. When VGS is 10V, its on-resistance (RDS(ON)) is only 6mΩ, showing extremely low conduction losses, suitable for applications requiring low power consumption and high current handling capabilities. The maximum drain current (ID) of this MOSFET can reach 70A, which is very suitable for systems that require high current loads. STB60NF03L-TR-VB uses Trench technology and has excellent switching performance and efficiency. It is widely used in power management, automotive electronics, electric drives and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At 4.5V gate voltage: 8mΩ
- At 10V gate voltage: 6mΩ
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: About 150W (depends on heat dissipation conditions)
Domain and module applications:
3. **Automotive electronics**:
In the automotive electronics field, this MOSFET is suitable for various power management and drive modules, including battery management systems (BMS) in electric vehicles (EV) and hybrid electric vehicles (HEV), as well as electric drive and power conversion modules. Its high current handling capability and low conduction loss can improve the efficiency of the vehicle power system, reduce power loss, and extend battery life.
4. **Industrial power systems**:
STB60NF03L-TR-VB is also widely used in power systems in the field of industrial automation control. This MOSFET can operate stably under high current loads and is suitable for use as a power switching element in various industrial equipment, especially in equipment that requires high efficiency and low power consumption. Its low on-resistance helps reduce system heat generation and ensures long-term stable operation of the equipment.
5. **Battery management system (BMS)**:
Due to its low on-resistance and high current capability, the STB60NF03L-TR-VB is very suitable for use as a switching element in battery management systems. During the battery charging and discharging process, it can provide efficient current control, reduce power loss, ensure battery safety and efficiency, and extend battery life.
6. **Consumer Electronics**:
This MOSFET is also suitable for power management modules of consumer electronics, especially in portable devices and small battery-powered devices. Its low on-resistance and high efficiency can effectively reduce the energy consumption of the device, help extend battery life, and improve device performance.
Technical support:
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