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STB60N06-TR-VB Product details
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Product Introduction
**STB60N06-TR-VB** is a high-performance single-channel N-type MOSFET in **TO263** package, designed for high-power switching applications. Its maximum drain-source voltage (VDS) is 60V, suitable for low to medium voltage power management systems, switching power supplies and electric drive modules. The maximum gate-source voltage (VGS) of this MOSFET is 20V, which can work stably in various control systems. Its threshold voltage (Vth) is 1.7V, which allows it to be turned on at a lower gate drive voltage, thereby improving efficiency and response speed.
STB60N06-TR-VB has a very low on-resistance, which is 12mΩ at a gate-source voltage of 4.5V and drops to 11mΩ at a gate-source voltage of 10V. Low on-resistance means that the MOSFET has lower power loss when working, which improves the efficiency of the system. The maximum drain current (ID) of this MOSFET is 75A, which is suitable for high-current, high-power switching applications.
Using **Trench** technology, the STB60N06-TR-VB optimizes the conduction path, significantly reducing switching losses and heat accumulation, and providing higher efficiency. It is ideal for use in environments that require efficient power conversion and high current carrying.
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**STB60N06-TR-VB** is a high-performance single-channel N-type MOSFET in **TO263** package, designed for high-power switching applications. Its maximum drain-source voltage (VDS) is 60V, suitable for low to medium voltage power management systems, switching power supplies and electric drive modules. The maximum gate-source voltage (VGS) of this MOSFET is 20V, which can work stably in various control systems. Its threshold voltage (Vth) is 1.7V, which allows it to be turned on at a lower gate drive voltage, thereby improving efficiency and response speed.
STB60N06-TR-VB has a very low on-resistance, which is 12mΩ at a gate-source voltage of 4.5V and drops to 11mΩ at a gate-source voltage of 10V. Low on-resistance means that the MOSFET has lower power loss when working, which improves the efficiency of the system. The maximum drain current (ID) of this MOSFET is 75A, which is suitable for high-current, high-power switching applications.
Using **Trench** technology, the STB60N06-TR-VB optimizes the conduction path, significantly reducing switching losses and heat accumulation, and providing higher efficiency. It is ideal for use in environments that require efficient power conversion and high current carrying.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|-------------|------------------------------------------------------------|
| **Package Type** | TO263 | - | Surface mount package for high power applications, providing good heat dissipation. |
| **Configuration** | Single channel N-type | - | Designed for high efficiency switching, with low on-resistance and high current handling capability. |
| **Maximum drain-source voltage (VDS)** | 60V | V | The maximum drain-source voltage is 60V, suitable for switching applications in medium voltage systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for high efficiency control and drive systems. |
| **Threshold voltage (Vth)** | 1.7V | V | The lower threshold voltage enables the MOSFET to start up faster and improve efficiency. |
| **On-resistance (RDS(ON))** | 12mΩ (@VGS=4.5V) | mΩ | At a gate-source voltage of 4.5V, the MOSFET exhibits lower on-resistance, reducing energy loss. |
| **On-resistance (RDS(ON))** | 11mΩ (@VGS=10V) | mΩ | At a gate-source voltage of 10V, the on-resistance is further reduced to optimize switching efficiency and performance. |
| **Maximum drain current (ID)** | 75A | A | High current carrying capability, suitable for power conversion and drive applications with high power loads. |
| **Technology type** | Trench | - | Using Trench technology, it provides lower on-resistance, improving switching efficiency and power loss. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|-------------|------------------------------------------------------------|
| **Package Type** | TO263 | - | Surface mount package for high power applications, providing good heat dissipation. |
| **Configuration** | Single channel N-type | - | Designed for high efficiency switching, with low on-resistance and high current handling capability. |
| **Maximum drain-source voltage (VDS)** | 60V | V | The maximum drain-source voltage is 60V, suitable for switching applications in medium voltage systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for high efficiency control and drive systems. |
| **Threshold voltage (Vth)** | 1.7V | V | The lower threshold voltage enables the MOSFET to start up faster and improve efficiency. |
| **On-resistance (RDS(ON))** | 12mΩ (@VGS=4.5V) | mΩ | At a gate-source voltage of 4.5V, the MOSFET exhibits lower on-resistance, reducing energy loss. |
| **On-resistance (RDS(ON))** | 11mΩ (@VGS=10V) | mΩ | At a gate-source voltage of 10V, the on-resistance is further reduced to optimize switching efficiency and performance. |
| **Maximum drain current (ID)** | 75A | A | High current carrying capability, suitable for power conversion and drive applications with high power loads. |
| **Technology type** | Trench | - | Using Trench technology, it provides lower on-resistance, improving switching efficiency and power loss. |
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Domain and module applications：
Applications and Module Examples
1. **Switching Power Supplies**
**STB60N06-TR-VB** is widely used in switching power supply modules, especially in devices such as DC-DC converters, AC-DC power supplies and uninterruptible power supplies (UPS). Its low on-resistance and high current carrying capacity enable it to reduce power losses in high-efficiency power conversion and improve overall system efficiency. In these applications, it can significantly improve the performance of the power supply, reduce temperature rise, and extend the service life of the equipment.
2. **Power Tools and Motor Drives**
The MOSFET's 75A maximum drain current makes it suitable for use in power tool drives and motor control systems. For example, in power tools such as electric drills, cutters, and electric screwdrivers, the STB60N06-TR-VB can provide efficient power conversion and reliable drive control to ensure stable operation of the equipment and improve operating efficiency. In addition, it is also suitable for high-efficiency motor control systems such as fans, electric bicycle drive systems, and robots.
3. **LED drive and lighting system**
In LED drive systems, **STB60N06-TR-VB**'s low on-resistance and high current carrying capacity can significantly reduce energy loss and ensure efficient LED lighting. Whether in home lighting systems or commercial lighting, this MOSFET can provide reliable and efficient power conversion, maintain constant current output, and ensure efficient and long-life operation of LED lamps.
4. **Battery Management System (BMS)**
In the battery management system (BMS), STB60N06-TR-VB is particularly suitable for battery charging, discharging and protection circuits due to its low on-resistance and high current carrying capacity. It can efficiently manage the battery status to ensure that the battery does not suffer excessive loss and overheating during charging and discharging. This MOSFET plays an important role in applications in electric vehicles, power storage systems and other fields.
5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
**STB60N06-TR-VB** is also suitable for battery management, motor control and charging modules in electric vehicles (EV) and hybrid electric vehicles (HEV). Its high switching efficiency and high current handling capability excel in these demanding electric drive systems. MOSFET can ensure stable operation of the battery management system, improve battery life and optimize energy conversion efficiency.
6. **Solar Inverters**
In solar inverters, STB60N06-TR-VB acts as an efficient switching element that can effectively convert the DC power generated by solar panels into AC power. Due to its low on-resistance and low power loss, this MOSFET can greatly improve the conversion efficiency of the inverter, reduce system heating and extend the service life of the equipment.
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**STB60N06-TR-VB** is a high-performance, high-current carrying MOSFET suitable for switching power supplies, power tool drivers, LED lighting, charging control, battery management systems, electric vehicles, etc. Its low on-resistance, high current handling capability and excellent switching efficiency make it an ideal choice for high-power power conversion and electric drive systems.
1. **Switching Power Supplies**
**STB60N06-TR-VB** is widely used in switching power supply modules, especially in devices such as DC-DC converters, AC-DC power supplies and uninterruptible power supplies (UPS). Its low on-resistance and high current carrying capacity enable it to reduce power losses in high-efficiency power conversion and improve overall system efficiency. In these applications, it can significantly improve the performance of the power supply, reduce temperature rise, and extend the service life of the equipment.
2. **Power Tools and Motor Drives**
The MOSFET's 75A maximum drain current makes it suitable for use in power tool drives and motor control systems. For example, in power tools such as electric drills, cutters, and electric screwdrivers, the STB60N06-TR-VB can provide efficient power conversion and reliable drive control to ensure stable operation of the equipment and improve operating efficiency. In addition, it is also suitable for high-efficiency motor control systems such as fans, electric bicycle drive systems, and robots.
3. **LED drive and lighting system**
In LED drive systems, **STB60N06-TR-VB**'s low on-resistance and high current carrying capacity can significantly reduce energy loss and ensure efficient LED lighting. Whether in home lighting systems or commercial lighting, this MOSFET can provide reliable and efficient power conversion, maintain constant current output, and ensure efficient and long-life operation of LED lamps.
4. **Battery Management System (BMS)**
In the battery management system (BMS), STB60N06-TR-VB is particularly suitable for battery charging, discharging and protection circuits due to its low on-resistance and high current carrying capacity. It can efficiently manage the battery status to ensure that the battery does not suffer excessive loss and overheating during charging and discharging. This MOSFET plays an important role in applications in electric vehicles, power storage systems and other fields.
5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
**STB60N06-TR-VB** is also suitable for battery management, motor control and charging modules in electric vehicles (EV) and hybrid electric vehicles (HEV). Its high switching efficiency and high current handling capability excel in these demanding electric drive systems. MOSFET can ensure stable operation of the battery management system, improve battery life and optimize energy conversion efficiency.
6. **Solar Inverters**
In solar inverters, STB60N06-TR-VB acts as an efficient switching element that can effectively convert the DC power generated by solar panels into AC power. Due to its low on-resistance and low power loss, this MOSFET can greatly improve the conversion efficiency of the inverter, reduce system heating and extend the service life of the equipment.
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**STB60N06-TR-VB** is a high-performance, high-current carrying MOSFET suitable for switching power supplies, power tool drivers, LED lighting, charging control, battery management systems, electric vehicles, etc. Its low on-resistance, high current handling capability and excellent switching efficiency make it an ideal choice for high-power power conversion and electric drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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