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STB50NE10T4-VB Product details
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Product Introduction: STB50NE10T4-VB MOSFET
The STB50NE10T4-VB is a single N-channel MOSFET in a TO263 package, suitable for high-current, high-efficiency power switching applications. This MOSFET has a maximum drain-source voltage (VDS) of up to 100V, and has an extremely low on-resistance (RDS(ON)) of 20mΩ when the gate voltage (VGS) is 10V, which enables it to perform excellently under high current conditions. Its maximum drain current is 70A, and it can operate stably under high load conditions. It is very suitable for applications such as power management, motor control and inverters, especially those that require high efficiency and high current handling. The device uses Trench technology, has good switching speed and low conduction loss, thereby improving the overall energy efficiency of the system.
The STB50NE10T4-VB is a single N-channel MOSFET in a TO263 package, suitable for high-current, high-efficiency power switching applications. This MOSFET has a maximum drain-source voltage (VDS) of up to 100V, and has an extremely low on-resistance (RDS(ON)) of 20mΩ when the gate voltage (VGS) is 10V, which enables it to perform excellently under high current conditions. Its maximum drain current is 70A, and it can operate stably under high load conditions. It is very suitable for applications such as power management, motor control and inverters, especially those that require high efficiency and high current handling. The device uses Trench technology, has good switching speed and low conduction loss, thereby improving the overall energy efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- At 10V gate voltage: 20mΩ
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: Approximately 150W (depending on heat dissipation conditions)
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- At 10V gate voltage: 20mΩ
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: Approximately 150W (depending on heat dissipation conditions)
Domain and module applications：
Applications and modules
1. **Power supply system**:
STB50NE10T4-VB has very low on-resistance and high current carrying capacity, which is very suitable for high-efficiency power conversion modules such as switching power supplies (SMPS), DC-DC converters, etc. This MOSFET can reduce power loss and improve energy efficiency, especially suitable for power systems that require high current and low power consumption.
2. **Motor drive module**:
In motor control systems, STB50NE10T4-VB can be used to drive DC motors, stepper motors and brushless DC motors (BLDC). Its low RDS(ON) can reduce power loss, provide higher current efficiency, and help improve the operating efficiency and response speed of the motor.
3. **Inverter application**:
This MOSFET is suitable for inverter modules, especially in photovoltaic inverters and power inverters. Due to its high current carrying capacity and low on-resistance, it can reduce energy losses during power conversion and provide higher system efficiency.
4. **Battery Management System (BMS)**:
In the battery management system, the STB50NE10T4-VB can be effectively used as a switching element to manage the battery charging and discharging process. Its low RDS(ON) can significantly reduce system power consumption while improving battery charging efficiency, helping to extend the battery life.
5. **Automotive Electronics**:
This MOSFET is widely used in battery management, electric drive, and power control systems for electric vehicles (EVs) and hybrid electric vehicles (HEVs). Due to its high current handling capability, it can meet the high-efficiency needs in automotive applications, provide stable current control, and ensure efficient operation of the vehicle power system.
6. **Industrial Power Systems**:
In the field of industrial automation and control, the STB50NE10T4-VB can be used as a switching element in power modules, especially in industrial equipment with high current and high efficiency requirements. It can provide low-loss, high-efficiency power transmission and effectively reduce heat generation, thereby improving system reliability and performance.
1. **Power supply system**:
STB50NE10T4-VB has very low on-resistance and high current carrying capacity, which is very suitable for high-efficiency power conversion modules such as switching power supplies (SMPS), DC-DC converters, etc. This MOSFET can reduce power loss and improve energy efficiency, especially suitable for power systems that require high current and low power consumption.
2. **Motor drive module**:
In motor control systems, STB50NE10T4-VB can be used to drive DC motors, stepper motors and brushless DC motors (BLDC). Its low RDS(ON) can reduce power loss, provide higher current efficiency, and help improve the operating efficiency and response speed of the motor.
3. **Inverter application**:
This MOSFET is suitable for inverter modules, especially in photovoltaic inverters and power inverters. Due to its high current carrying capacity and low on-resistance, it can reduce energy losses during power conversion and provide higher system efficiency.
4. **Battery Management System (BMS)**:
In the battery management system, the STB50NE10T4-VB can be effectively used as a switching element to manage the battery charging and discharging process. Its low RDS(ON) can significantly reduce system power consumption while improving battery charging efficiency, helping to extend the battery life.
5. **Automotive Electronics**:
This MOSFET is widely used in battery management, electric drive, and power control systems for electric vehicles (EVs) and hybrid electric vehicles (HEVs). Due to its high current handling capability, it can meet the high-efficiency needs in automotive applications, provide stable current control, and ensure efficient operation of the vehicle power system.
6. **Industrial Power Systems**:
In the field of industrial automation and control, the STB50NE10T4-VB can be used as a switching element in power modules, especially in industrial equipment with high current and high efficiency requirements. It can provide low-loss, high-efficiency power transmission and effectively reduce heat generation, thereby improving system reliability and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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