STB50NE10L-T4-VB Product details
Product introduction:
STB50NE10L-T4-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low-loss, high-current applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V and the maximum drain current (ID) is 70A, which is suitable for efficient power transmission and conversion. Its on-resistance (RDS(ON)) is 20mΩ at VGS = 10V. The extremely low on-resistance enables it to provide extremely low power loss in high-current applications and has excellent switching performance. STB50NE10L-T4-VB uses Trench technology to optimize the conduction characteristics and switching response of MOSFET, and is widely used in power management, power conversion, and efficient battery-driven systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: STB50NE10L-T4-VB
- **Package type**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Maximum power dissipation (Ptot)**: 100W (typical, @25°C)
- **Reverse recovery time (trr)**: 45ns (typical)
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench
- **Maximum junction temperature**: 150°C
- **Input capacitance (Ciss)**: 6800pF
- **Output capacitance (Coss)**: 1000pF
- **Reverse capacitance (Crss)**: 200pF
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Domain and module applications:
1. **Power conversion module**
The low on-resistance and high current carrying capacity of STB50NE10L-T4-VB make it very suitable for power conversion modules. It can be used as a switching element in an efficient DC-DC converter to reduce energy loss and improve conversion efficiency. It is particularly suitable for power management systems that require high current and medium voltage (such as below 100V).
2. **Power tool drive system**
In power tools, the high current capability and low on-resistance of STB50NE10L-T4-VB make it an ideal choice for power tool drive systems. It can provide fast response and efficient power transfer during startup and operation, and is particularly suitable for power tools that require low power consumption and high load capacity.
3. **Battery management system (BMS)**
In battery management systems (BMS), STB50NE10L-T4-VB is often used as a battery charge and discharge control element. Its low on-resistance and fast switching performance make it an important switching element in the battery charging and discharging process, especially suitable for battery management in electric vehicles, mobile devices and energy storage systems.
4. **High-efficiency battery charger**
This MOSFET is suitable for high-efficiency battery charger design, which can effectively reduce energy loss during charging and extend battery life. Low RDS(ON) enables it to maintain high-efficiency energy conversion when charging the battery, suitable for various portable devices, smartphones, drones and other applications with high charging requirements.
5. **Home appliance control system**
In home appliance control systems, STB50NE10L-T4-VB has good power switching characteristics and is suitable for power management of home appliances such as air conditioners, refrigerators, washing machines, etc. Due to its high current carrying capacity and low power consumption, it can effectively optimize the energy efficiency and stability of home appliances and reduce the loss of home appliances.
6. **LED drive circuit**
STB50NE10L-T4-VB is widely used in LED drive circuits, especially for low voltage and high current drive LED lighting systems. Due to the low on-resistance and fast response characteristics of MOSFET, the efficiency of LED systems can be improved, heat loss can be reduced, and the service life of LED lamps can be extended.
7. **Power switch equipment**
In power switch equipment, STB50NE10L-T4-VB can be used as a high-speed switching element in power control systems. Its low RDS(ON) and high current capability give it advantages in various power switching applications, including inverters, power amplifiers and other devices.
8. **Automotive electronic systems**
STB50NE10L-T4-VB also has important applications in automotive electronic systems, such as electric power steering (EPS), battery management and electric drive systems. Its high-efficiency power switching characteristics can effectively support power distribution and management in the car, improving the overall energy efficiency of the automotive electronic system.
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