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STB50N25M5-VB Product details
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Product Introduction
STB50N25M5-VB is a high-efficiency N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 50A. This MOSFET uses Trench technology and has a very low on-resistance (RDS(ON) of 12mΩ at VGS=10V). Its startup voltage (Vth) is 1.7V, which is suitable for low-voltage drive applications and enables fast switching and high-efficiency conversion. This MOSFET has obvious advantages in power density, heat dissipation performance and energy efficiency, and is widely used in power management, battery management and high-efficiency power conversion.
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STB50N25M5-VB is a high-efficiency N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 50A. This MOSFET uses Trench technology and has a very low on-resistance (RDS(ON) of 12mΩ at VGS=10V). Its startup voltage (Vth) is 1.7V, which is suitable for low-voltage drive applications and enables fast switching and high-efficiency conversion. This MOSFET has obvious advantages in power density, heat dissipation performance and energy efficiency, and is widely used in power management, battery management and high-efficiency power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Specification | Description|
|-----------------|------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides high thermal management capabilities and is suitable for high-power switching applications. |
| **Channel Configuration** | Single N-Channel | The N-Channel configuration is suitable for high-efficiency current switching and control. |
| **VDS** | 30V | The maximum drain-source voltage is 30V, which is suitable for high-efficiency switching applications with low voltage control. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, which is suitable for common control voltage ranges. |
| **Vth** | 1.7V | The startup voltage is 1.7V, which supports low voltage drive and optimizes switching performance. |
| **RDS(ON)** | 18mΩ@VGS=4.5V | The on-resistance is 18mΩ at VGS=4.5V, with lower energy loss. |
| | 12mΩ@VGS=10V | The on-resistance is 12mΩ at VGS=10V, further improving switching efficiency and reducing heat. |
| **ID** | 50A | The maximum drain current is 50A, capable of handling high current loads, suitable for high power applications. |
| **Technology** | Trench | Trench technology provides lower on-resistance and supports high-speed and efficient switching characteristics. |
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| Parameter | Specification | Description|
|-----------------|------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides high thermal management capabilities and is suitable for high-power switching applications. |
| **Channel Configuration** | Single N-Channel | The N-Channel configuration is suitable for high-efficiency current switching and control. |
| **VDS** | 30V | The maximum drain-source voltage is 30V, which is suitable for high-efficiency switching applications with low voltage control. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, which is suitable for common control voltage ranges. |
| **Vth** | 1.7V | The startup voltage is 1.7V, which supports low voltage drive and optimizes switching performance. |
| **RDS(ON)** | 18mΩ@VGS=4.5V | The on-resistance is 18mΩ at VGS=4.5V, with lower energy loss. |
| | 12mΩ@VGS=10V | The on-resistance is 12mΩ at VGS=10V, further improving switching efficiency and reducing heat. |
| **ID** | 50A | The maximum drain current is 50A, capable of handling high current loads, suitable for high power applications. |
| **Technology** | Trench | Trench technology provides lower on-resistance and supports high-speed and efficient switching characteristics. |
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Domain and module applications：
Applications and module examples
1. **Power converters and DC-DC converters**
The STB50N25M5-VB is suitable for various power converters and DC-DC converters, especially where high current handling capability and low on-resistance are required. Its high current capability of 50A and low on-resistance of 12mΩ enable this MOSFET to provide extremely low power loss and excellent efficiency during power conversion. Application scenarios include computer power supplies, communication power supplies, and high-power chargers.
2. **Battery Management System (BMS)**
Battery management systems require efficient power switching and energy conversion efficiency. The 50A current capability and low on-resistance of the STB50N25M5-VB make it ideal for battery protection, balancing, and charging management. Especially in electric vehicles (EVs) and energy storage systems (ESSs), it can effectively manage the battery charging and discharging process, reduce heat generation, and extend battery life.
3. **Automotive electronic systems**
In automotive electronic systems, the STB50N25M5-VB can be used for battery management, electric vehicle drive systems, and on-board power conversion modules. Its low on-resistance and high current capability can reduce power loss, optimize energy efficiency, and maintain stability under high-frequency switching and dynamic load conditions, improving the reliability and efficiency of the vehicle's electrical system.
4. **High-efficiency power tools and drive systems**
This MOSFET can be used in power tools and various drive systems to provide low-loss, high-efficiency power switching. Power tools such as electric screwdrivers and electric drills can benefit from the high current capability and low power loss provided by this MOSFET, ensuring efficient operation of the tools, reducing battery burden, and extending tool usage time.
5. **LED driver power supply**
In LED driver power supply, STB50N25M5-VB can effectively regulate current and reduce energy waste. Its low on-resistance ensures high efficiency and low heat generation during long-term use. It is particularly suitable for large lighting systems and high-power LED lighting power supplies, such as industrial, commercial and street lighting.
6. **Smart grid and energy management system**
STB50N25M5-VB is suitable for the current regulation part of smart grid and energy management system. It can efficiently manage and distribute electricity and provide stable energy transmission when the grid load fluctuates greatly. This MOSFET helps to improve the energy utilization of the power grid and ensure the stability and reliability of the power transmission process.
1. **Power converters and DC-DC converters**
The STB50N25M5-VB is suitable for various power converters and DC-DC converters, especially where high current handling capability and low on-resistance are required. Its high current capability of 50A and low on-resistance of 12mΩ enable this MOSFET to provide extremely low power loss and excellent efficiency during power conversion. Application scenarios include computer power supplies, communication power supplies, and high-power chargers.
2. **Battery Management System (BMS)**
Battery management systems require efficient power switching and energy conversion efficiency. The 50A current capability and low on-resistance of the STB50N25M5-VB make it ideal for battery protection, balancing, and charging management. Especially in electric vehicles (EVs) and energy storage systems (ESSs), it can effectively manage the battery charging and discharging process, reduce heat generation, and extend battery life.
3. **Automotive electronic systems**
In automotive electronic systems, the STB50N25M5-VB can be used for battery management, electric vehicle drive systems, and on-board power conversion modules. Its low on-resistance and high current capability can reduce power loss, optimize energy efficiency, and maintain stability under high-frequency switching and dynamic load conditions, improving the reliability and efficiency of the vehicle's electrical system.
4. **High-efficiency power tools and drive systems**
This MOSFET can be used in power tools and various drive systems to provide low-loss, high-efficiency power switching. Power tools such as electric screwdrivers and electric drills can benefit from the high current capability and low power loss provided by this MOSFET, ensuring efficient operation of the tools, reducing battery burden, and extending tool usage time.
5. **LED driver power supply**
In LED driver power supply, STB50N25M5-VB can effectively regulate current and reduce energy waste. Its low on-resistance ensures high efficiency and low heat generation during long-term use. It is particularly suitable for large lighting systems and high-power LED lighting power supplies, such as industrial, commercial and street lighting.
6. **Smart grid and energy management system**
STB50N25M5-VB is suitable for the current regulation part of smart grid and energy management system. It can efficiently manage and distribute electricity and provide stable energy transmission when the grid load fluctuates greatly. This MOSFET helps to improve the energy utilization of the power grid and ensure the stability and reliability of the power transmission process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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