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STB45NF3LLT4-VB Product details
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Product Introduction
**STB45NF3LLT4-VB** is a single-channel N-type MOSFET in **TO263** package with excellent low on-resistance and high current carrying capacity. The maximum drain-source voltage (VDS) of this product is 30V, which is suitable for low-voltage, high-efficiency switching power supplies and power conversion applications. Its maximum gate-source voltage (VGS) is ±20V, ensuring stable operation under various control conditions. With a threshold voltage (Vth) of 1.7V, it means that the MOSFET can be turned on at a lower drive voltage, providing higher switching efficiency.
The on-resistance of STB45NF3LLT4-VB is 18mΩ at a gate-source voltage of 4.5V and 12mΩ at a gate-source voltage of 10V, which enables it to maintain low power loss in high current environments. The maximum drain current (ID) of this MOSFET is 50A, which is suitable for high-current, high-power switching applications.
**STB45NF3LLT4-VB** adopts **Trench** technology to optimize the conduction path, reduce the on-resistance, provide higher efficiency and lower energy loss. This makes it excel in various power management, drive systems and electric equipment, especially in situations requiring high switching efficiency and high current carrying capacity.
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**STB45NF3LLT4-VB** is a single-channel N-type MOSFET in **TO263** package with excellent low on-resistance and high current carrying capacity. The maximum drain-source voltage (VDS) of this product is 30V, which is suitable for low-voltage, high-efficiency switching power supplies and power conversion applications. Its maximum gate-source voltage (VGS) is ±20V, ensuring stable operation under various control conditions. With a threshold voltage (Vth) of 1.7V, it means that the MOSFET can be turned on at a lower drive voltage, providing higher switching efficiency.
The on-resistance of STB45NF3LLT4-VB is 18mΩ at a gate-source voltage of 4.5V and 12mΩ at a gate-source voltage of 10V, which enables it to maintain low power loss in high current environments. The maximum drain current (ID) of this MOSFET is 50A, which is suitable for high-current, high-power switching applications.
**STB45NF3LLT4-VB** adopts **Trench** technology to optimize the conduction path, reduce the on-resistance, provide higher efficiency and lower energy loss. This makes it excel in various power management, drive systems and electric equipment, especially in situations requiring high switching efficiency and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|-------------|------------------------------------------------------------|
| **Package Type** | TO263 | - | Surface mount package for high power applications, providing good heat dissipation. |
| **Configuration** | Single channel N-type | - | Designed for high efficiency switching, with low on-resistance and high current handling capability. |
| **Maximum drain-source voltage (VDS)** | 30V | V | The maximum drain-source voltage is 30V, suitable for switching applications in low voltage systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for high efficiency control and drive systems. |
| **Threshold voltage (Vth)** | 1.7V | V | The lower threshold voltage enables the MOSFET to start up faster and improve efficiency. |
| **On-resistance (RDS(ON))** | 18mΩ (@VGS=4.5V) | mΩ | At a gate-source voltage of 4.5V, the MOSFET exhibits lower on-resistance, reducing energy loss. |
| **On-resistance (RDS(ON))** | 12mΩ (@VGS=10V) | mΩ | At a gate-source voltage of 10V, the on-resistance is further reduced to optimize switching efficiency and performance. |
| **Maximum drain current (ID)** | 50A | A | High current carrying capability, suitable for power conversion and drive applications with high power loads. |
| **Technology type** | Trench | - | Using Trench technology, it provides lower on-resistance, improving switching efficiency and power loss. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|-------------|------------------------------------------------------------|
| **Package Type** | TO263 | - | Surface mount package for high power applications, providing good heat dissipation. |
| **Configuration** | Single channel N-type | - | Designed for high efficiency switching, with low on-resistance and high current handling capability. |
| **Maximum drain-source voltage (VDS)** | 30V | V | The maximum drain-source voltage is 30V, suitable for switching applications in low voltage systems. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | The maximum gate-source voltage is ±20V, suitable for high efficiency control and drive systems. |
| **Threshold voltage (Vth)** | 1.7V | V | The lower threshold voltage enables the MOSFET to start up faster and improve efficiency. |
| **On-resistance (RDS(ON))** | 18mΩ (@VGS=4.5V) | mΩ | At a gate-source voltage of 4.5V, the MOSFET exhibits lower on-resistance, reducing energy loss. |
| **On-resistance (RDS(ON))** | 12mΩ (@VGS=10V) | mΩ | At a gate-source voltage of 10V, the on-resistance is further reduced to optimize switching efficiency and performance. |
| **Maximum drain current (ID)** | 50A | A | High current carrying capability, suitable for power conversion and drive applications with high power loads. |
| **Technology type** | Trench | - | Using Trench technology, it provides lower on-resistance, improving switching efficiency and power loss. |
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Domain and module applications：
Applications and module examples
1. **Switching Power Supplies**
**STB45NF3LLT4-VB** is widely used in switching power modules (such as DC-DC converters, AC-DC power supplies, and battery management systems). Due to its low on-resistance (18mΩ@VGS=4.5V) and high current handling capability (50A), it can effectively reduce power loss and improve system conversion efficiency. This makes it particularly outstanding in power conversion fields that require high efficiency and low energy consumption.
2. **Power Tools and Motor Drive Systems**
Due to the high current carrying capacity of **STB45NF3LLT4-VB**, it is particularly suitable for applications that require high current handling, such as power tools, motor drives and inverters. In power tool drive systems, the efficient switching capability of MOSFET can reduce heat loss, extend the service life of the system and improve working efficiency. In addition, it can also be used in fans, motor drive systems and other fields to ensure stable and efficient power supply.
3. **LED driver and lighting system**
**STB45NF3LLT4-VB** is suitable for LED driver and other high-efficiency lighting systems, especially in situations requiring high current and high efficiency. Due to its low on-resistance and fast switching characteristics, it can maintain efficient operation of LED driver power supply while reducing energy loss. This is especially important in large-scale LED lighting applications, such as commercial lighting and home lighting.
4. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In electric vehicles (EV) and hybrid electric vehicles (HEV), **STB45NF3LLT4-VB** can be used in key modules such as battery management system, motor drive and charging system. Low on-resistance and high current handling capability can ensure efficiency during battery charging and discharging, while ensuring efficient operation of drive motors and reducing energy consumption.
5. **Battery Management System (BMS)**
In the battery management system (BMS), **STB45NF3LLT4-VB**'s high switching efficiency and high current carrying capacity enable it to be used in battery charging, discharging management and protection circuits. By reducing energy losses in the battery management process, this MOSFET improves the overall performance of the system and is able to handle high current loads, ensuring long battery life and stability.
6. **Power Electronics Applications**
**STB45NF3LLT4-VB** is suitable for a wide range of power electronics applications, such as UPS systems, solar inverters, wind power generation systems, etc. Its low on-resistance and high current carrying capacity enable it to provide efficient power conversion and processing in these high-power systems, reducing power losses and improving system reliability.
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**STB45NF3LLT4-VB** is a high-efficiency, high-current carrying MOSFET suitable for a wide range of switching power supplies, power tool drives, battery management systems and high-efficiency lighting applications. Its low on-resistance and high switching efficiency make it an ideal choice for various power conversion and drive systems.
1. **Switching Power Supplies**
**STB45NF3LLT4-VB** is widely used in switching power modules (such as DC-DC converters, AC-DC power supplies, and battery management systems). Due to its low on-resistance (18mΩ@VGS=4.5V) and high current handling capability (50A), it can effectively reduce power loss and improve system conversion efficiency. This makes it particularly outstanding in power conversion fields that require high efficiency and low energy consumption.
2. **Power Tools and Motor Drive Systems**
Due to the high current carrying capacity of **STB45NF3LLT4-VB**, it is particularly suitable for applications that require high current handling, such as power tools, motor drives and inverters. In power tool drive systems, the efficient switching capability of MOSFET can reduce heat loss, extend the service life of the system and improve working efficiency. In addition, it can also be used in fans, motor drive systems and other fields to ensure stable and efficient power supply.
3. **LED driver and lighting system**
**STB45NF3LLT4-VB** is suitable for LED driver and other high-efficiency lighting systems, especially in situations requiring high current and high efficiency. Due to its low on-resistance and fast switching characteristics, it can maintain efficient operation of LED driver power supply while reducing energy loss. This is especially important in large-scale LED lighting applications, such as commercial lighting and home lighting.
4. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In electric vehicles (EV) and hybrid electric vehicles (HEV), **STB45NF3LLT4-VB** can be used in key modules such as battery management system, motor drive and charging system. Low on-resistance and high current handling capability can ensure efficiency during battery charging and discharging, while ensuring efficient operation of drive motors and reducing energy consumption.
5. **Battery Management System (BMS)**
In the battery management system (BMS), **STB45NF3LLT4-VB**'s high switching efficiency and high current carrying capacity enable it to be used in battery charging, discharging management and protection circuits. By reducing energy losses in the battery management process, this MOSFET improves the overall performance of the system and is able to handle high current loads, ensuring long battery life and stability.
6. **Power Electronics Applications**
**STB45NF3LLT4-VB** is suitable for a wide range of power electronics applications, such as UPS systems, solar inverters, wind power generation systems, etc. Its low on-resistance and high current carrying capacity enable it to provide efficient power conversion and processing in these high-power systems, reducing power losses and improving system reliability.
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**STB45NF3LLT4-VB** is a high-efficiency, high-current carrying MOSFET suitable for a wide range of switching power supplies, power tool drives, battery management systems and high-efficiency lighting applications. Its low on-resistance and high switching efficiency make it an ideal choice for various power conversion and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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