STB40NF10LT4-VB Product details
Product introduction:
STB40NF10LT4-VB is a single N-channel MOSFET in TO263 package, suitable for high-efficiency power switching applications. Its maximum drain-source voltage (VDS) can reach 100V, and the maximum gate-source voltage (VGS) is ±20V, with good switching performance. The threshold voltage (Vth) of this MOSFET is 1.8V, and the on-resistance (RDS(ON)) is only 30mΩ at VGS = 10V, showing lower conduction losses, thereby improving overall efficiency. It has a high current carrying capacity with a maximum drain current of 45A, so it is widely used in power management fields that require large current transmission and low conduction losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- At 4.5V gate voltage: 35mΩ
- At 10V gate voltage: 30mΩ
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: Approximately 150W (depending on heat dissipation conditions)
Domain and module applications:
1. **Power supply system**:
The low RDS(ON) and high current carrying capacity of STB40NF10LT4-VB make it particularly suitable for efficient power conversion modules. For example, in switching power supplies (SMPS) and DC-DC converters, this MOSFET can be used as the main switching element to achieve efficient energy conversion, reduce heat generation and improve the overall efficiency of the system.
2. **Motor drive module**:
In motor control and drive systems, STB40NF10LT4-VB is suitable for drive circuits of DC motors and stepper motors. Due to its low on-resistance, it can maintain low power consumption at high currents, making motor drives more efficient and reliable.
3. **Inverter application**:
Due to its high current carrying capacity and low conduction loss, this MOSFET can be used in photovoltaic inverters and power inverters. It can work stably in high current working environments and reduce losses during power conversion, thereby improving system efficiency.
4. **Battery Management System (BMS)**:
In the battery management system, the STB40NF10LT4-VB can be used for battery charge and discharge management, providing efficient power switching and battery protection. Its low RDS(ON) helps reduce the system's power consumption and extend the battery life.
5. **Automotive Electronics**:
This MOSFET is also widely used in automotive power systems, especially in battery management and electric drive systems for electric vehicles (EV) and hybrid electric vehicles (HEV). Its high withstand voltage and high current capabilities enable it to adapt to the high power and high efficiency requirements in the automotive field.
6. **Industrial Power Systems**:
In industrial automation and control systems, the STB40NF10LT4-VB can be used as an efficient switching element in power modules, and is widely used in power conversion and motor control of industrial equipment, providing reliable performance and reducing power loss.
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