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STB40NE03L-20TR-VB Product details
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Product Introduction
STB40NE03L-20TR-VB is a high-efficiency N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A. This MOSFET uses Trench technology and has a low on-resistance (RDS(ON) of 12mΩ at VGS=10V), which makes it perform well in high-frequency and high-efficiency power switching applications. Its startup voltage (Vth) is 1.7V, which is suitable for low-voltage control signals, with small switching losses and efficient energy conversion, and is particularly suitable for power management, automotive electrical systems, and battery charging.
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STB40NE03L-20TR-VB is a high-efficiency N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A. This MOSFET uses Trench technology and has a low on-resistance (RDS(ON) of 12mΩ at VGS=10V), which makes it perform well in high-frequency and high-efficiency power switching applications. Its startup voltage (Vth) is 1.7V, which is suitable for low-voltage control signals, with small switching losses and efficient energy conversion, and is particularly suitable for power management, automotive electrical systems, and battery charging.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Specification | Description|
|-----------------|------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides good heat dissipation and is suitable for high power applications. |
| **Channel Configuration** | Single N-Channel | The single N-Channel configuration is suitable for low voltage and high current switching applications. |
| **VDS** | 30V | The maximum drain-source voltage is 30V, suitable for low voltage drive applications. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, suitable for a wide range of control voltages. |
| **Vth** | 1.7V | The startup voltage is 1.7V, suitable for low voltage signal drive. |
| **RDS(ON)** | 18mΩ@VGS=4.5V | 18mΩ on-resistance at VGS=4.5V, low on-resistance helps reduce power loss. |
| | 12mΩ@VGS=10V | 12mΩ on-resistance at VGS=10V, optimized for high-efficiency switching applications. |
| **ID** | 50A | Maximum drain current is 50A, suitable for high current load applications. |
| **Technology** | Trench | Trench technology provides low on-resistance and high efficiency, suitable for high-frequency switching applications. |
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| Parameter | Specification | Description|
|-----------------|------------------------------------------|--------------------------------------------------------|
| **Package** | TO263 | The TO263 package provides good heat dissipation and is suitable for high power applications. |
| **Channel Configuration** | Single N-Channel | The single N-Channel configuration is suitable for low voltage and high current switching applications. |
| **VDS** | 30V | The maximum drain-source voltage is 30V, suitable for low voltage drive applications. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, suitable for a wide range of control voltages. |
| **Vth** | 1.7V | The startup voltage is 1.7V, suitable for low voltage signal drive. |
| **RDS(ON)** | 18mΩ@VGS=4.5V | 18mΩ on-resistance at VGS=4.5V, low on-resistance helps reduce power loss. |
| | 12mΩ@VGS=10V | 12mΩ on-resistance at VGS=10V, optimized for high-efficiency switching applications. |
| **ID** | 50A | Maximum drain current is 50A, suitable for high current load applications. |
| **Technology** | Trench | Trench technology provides low on-resistance and high efficiency, suitable for high-frequency switching applications. |
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Domain and module applications：
Application fields and module examples
1. **Power converters and DC-DC converters**
STB40NE03L-20TR-VB is very suitable for power management modules such as power converters and DC-DC converters due to its low on-resistance (RDS(ON) is 12mΩ). Its 50A current capability can meet the needs of high-power power supplies, and the low RDS(ON) characteristic can effectively reduce energy loss, thereby improving conversion efficiency, and is suitable for various computer power supplies, communication power supplies and other applications.
2. **Automotive electronic systems**
In automotive electrical systems, the high current capability (50A) and low on-resistance of this MOSFET make it suitable for battery management, vehicle power supplies and power control systems, providing efficient current control, reducing power loss, and ensuring efficient and stable operation of the system.
3. **Battery Management System**
In the battery management system (BMS), the STB40NE03L-20TR-VB can provide stable current switching and optimize the battery charging and discharging process. Its current capability of up to 50A and low RDS(ON) can effectively improve the efficiency and safety of the battery, and play a key role in battery protection and battery balancing.
4. **Power Tools and Drive Systems**
This MOSFET is also widely used in the drive systems of power tools (such as electric drills, screwdrivers, etc.). Its low on-resistance and high current capability can ensure the stability and efficiency of the motor drive, extend the tool life, reduce the battery burden, and provide better power conversion efficiency.
5. **Smart Grid and Energy Management**
The STB40NE03L-20TR-VB can also be used in the energy management system of the smart grid, especially in situations where low voltage and high current transmission are required. This MOSFET can effectively control high-current power output, optimize the energy distribution of the power grid, and help improve the stability and energy efficiency of the power grid.
6. **LED driver**
In LED driver applications, the STB40NE03L-20TR-VB can be used as an efficient switching device to provide stable current control and reduce energy loss. Its low RDS(ON) and high current handling capability make it very suitable for high-power LED lighting power supplies, ensuring maximum light efficiency and improving the energy efficiency of the entire system.
1. **Power converters and DC-DC converters**
STB40NE03L-20TR-VB is very suitable for power management modules such as power converters and DC-DC converters due to its low on-resistance (RDS(ON) is 12mΩ). Its 50A current capability can meet the needs of high-power power supplies, and the low RDS(ON) characteristic can effectively reduce energy loss, thereby improving conversion efficiency, and is suitable for various computer power supplies, communication power supplies and other applications.
2. **Automotive electronic systems**
In automotive electrical systems, the high current capability (50A) and low on-resistance of this MOSFET make it suitable for battery management, vehicle power supplies and power control systems, providing efficient current control, reducing power loss, and ensuring efficient and stable operation of the system.
3. **Battery Management System**
In the battery management system (BMS), the STB40NE03L-20TR-VB can provide stable current switching and optimize the battery charging and discharging process. Its current capability of up to 50A and low RDS(ON) can effectively improve the efficiency and safety of the battery, and play a key role in battery protection and battery balancing.
4. **Power Tools and Drive Systems**
This MOSFET is also widely used in the drive systems of power tools (such as electric drills, screwdrivers, etc.). Its low on-resistance and high current capability can ensure the stability and efficiency of the motor drive, extend the tool life, reduce the battery burden, and provide better power conversion efficiency.
5. **Smart Grid and Energy Management**
The STB40NE03L-20TR-VB can also be used in the energy management system of the smart grid, especially in situations where low voltage and high current transmission are required. This MOSFET can effectively control high-current power output, optimize the energy distribution of the power grid, and help improve the stability and energy efficiency of the power grid.
6. **LED driver**
In LED driver applications, the STB40NE03L-20TR-VB can be used as an efficient switching device to provide stable current control and reduce energy loss. Its low RDS(ON) and high current handling capability make it very suitable for high-power LED lighting power supplies, ensuring maximum light efficiency and improving the energy efficiency of the entire system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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